传感器英文文献翻译-光电传感器-(2)

传感器英文文献翻译———光电传感器报告人:学号：专业：老师：2011年6月2日PhotoelectricsensorKeyword:photoelectriceffectphotoelectricelementphotoelectricsensorclassificationsensorapplicationcharacteristics.Abstract:intherapiddevelopmentofscienceandtechnologyinthemodernsociety,mankindhasintotherapidlychanginginformationera,peopleindailylife,theproductionprocess,relymainlyonthedetectionofinformationtechnologybyacquiring,screeningandtransmission,toachievethebrakecontrol,automaticadjustment,atpresentourcountryhasputdetectiontechniqueslistedinoneoftheprioritytothedevelopmentofscienceandtechnology.Becauseofmicroelectronicstechnology,photoelectricsemiconductortechnology,opticalfibertechnologyandgratingtechnicaldevelopmentmakestheapplicationofthephotoelectricsensorisgrowing.Thesensorhassimplestructure,non-contact,highreliability,highprecision,measurableparametersandquickresponseandmoresimplestructure,formetc,andflexibleinautomaticdetectiontechnology,ithasbeenwidelyappliedinphotoelectriceffectasthetheoreticalbasis,thedevicebyphotoelectricmaterialcomposition.Text:First,theoreticalfoundation-photoelectriceffectPhotoelectriceffectgenerallyhavethephotoelectriceffect,opticaleffect,lightbornvoltseffect.Thelightshinesinphotoelectricmaterial,accordingtotheelectronicabsorptionmaterialsurfaceenergy,ifabsorbedenergylargeenoughelectronicelectronicwillovercomeboundfrommaterialsurfaceandentertheoutsidespace,whichchangesphotoelectronmaterials,thiskindofphenomenonbecometheconductivityofthephotoelectriceffectAccordingtoEinstein'sphotoelectroneffect,photonismovingparticles,eachphotonenergyforhv(vforlightfrequency,hforPlanck'sconstant,h=6.63*10-34J/HZ),thusdifferentfrequencyofphotonshavedifferentenergy,light,thehigherthefrequency,thephotonenergyisbigger.Assumingalltheenergyphotonstophotons,electronicenergywillincrease,increasedenergypartofthefetter,positiveionsusedtoovercomeanotherpartofconvertedintoelectronicenergy.Accordingtothelawofconservationofenergy:Type,mforelectronicquality,vforelectronicescapingthevelocity,Amicroelectronicstheworkdone.FromthetypethatwillmaketheoptoelectroniccathodesurfaceescapethenecessaryconditionsarehA.Duetothedifferentmaterialshavedifferentescaping,soreactivetoeachkindofcathodematerials,incidentlighthasacertainfrequencyisrestricted,whenthefrequencyofincidentlightunderthisfrequencylimit,nomatterhowthelightintensity,won'tproducephotoelectronlaunch,thisfrequencylimitA-hm212calledredlimit.Thecorrespondingwavelengthfortype,cforthespeedoflight,Areactiveforescaping.Whenisthesun,itselectronicenergy,absorbtheresistivityreduceconductivephenomenoncalledopticaleffects.Itbelongstothephotoelectriceffectwithin.Whenlightis,ifinsemiconductorelectronicenergybigwithsemiconductorofforbiddenbandwidth,theelectronicenergyfromthevalencebandjumpintotheconductionband,form,andatthesametime,thevalencebandelectronicleftthecorrespondingcavities.Electronics,cavitationremainedinsemiconductor,andparticipateinelectricconductiveoutsideformedunderthecurrentrole.Inadditiontometalouter,mostinsulatorsandsemiconductorhavephotoelectriceffect,particularlyremarkable,semiconductoropticaleffectaccordingtotheoptoelectronicsmanufacturingincidentlightinherentfrequency,whenlightresistanceinlight,itsconductivityincreases,resistancedrops.Thelightintensityisstrong,itsvalue,ifthesmaller,itsresistancetostoplightbacktotheoriginalvalue.Semiconductorproducedbylightilluminatethephenomenoniscalledlightemf,bornvoltseffectontheeffectofphotoelectricdeviceshavemadesi-basedones,photoelectricdiode,controlthyristorandopticalcouplers,etc.Second,optoelectroniccomponentsandcharacteristicsAccordingtotheoutsideoptoelectronicsmanufacturingoptoelectronicdeviceshavephotoelectron,inflatablephototubesandphotoelectrictimesoncetube.1.Phototubesphototubesarevariousandtypicalproductsarevacuumphototubesandinflatablephototubes,lightitsappearanceandstructureasshowninfigure1shows,madeofcylindricalmetalhalfcathodicKandislocatedinthewirescathodicaxisofanodeinApackageofsmokeintothevacuum,whenincidentlightwithinglassshellinthecathode,illuminateAsinglephotontookallofitsenergytransfertothecathodematerialsAfreeelectrons,soastomakethefreedomelectronicenergyincreaseh.Whenelectronsgainenergymorethanescapeofcathodematerials,itreactiveAmetalsurfaceconstraintscanovercomeescape,formelectronemission.Thiskindofelectroniccalledoptoelectronics,optoelectronicescapingthemetalsurfaceforafterinitialkineticenergyPhototubesnormalwork,anodepotentialthanthecathode,showninfigure2.Inoneshotmorethanredlightfrequencyispremise,escapefromtheoptoelectroniccathodesurfacebypositivepotentialattractedtheanodeinphotoelectrictubeformingspace,calledthecurrentstream.Theniflightintensityincreases,thenumberofphotonsbombardedthecathodemultiplied,unitoftimetolaunchphotoelectronnumberarealsoincreasing,photo-currentgreatens.Infigure2showscircuit,currentandresistanceisthevoltagedropacrosstheonlyafunctionoflightintensityrelations,soastoachieveaphotoelectricconversion.WhentheLTToptoelectroniccathodeK,electronicescapefromthecathodesurface,andwasthephotoelectricanodeisa