STM32-PMSM-MC-SDK5.0-Training-CHN

STM32MCSDK5.0培训2018/06MCUApplicationMotorControlLAB©2018STMicroelectronics-保留所有权利内容2上午1.MCSDK5.0算法的理论基础(1小时）2.MCSDK5.0详解(1小时）3.实验1：MCSDK5.0电动机参数识别(45分钟)下午4.MCSDK5.0工具链及图形用户界面(1小时）5.MCSDK5.0评估硬件(15分钟)6.实验2：基于MCSDK5.0API，速度控制与电机启动停止(20分钟)7.实验3：基于MCSDK5.0PI组件接口函数做在线参数修改(20分钟)8.实验4：基于MCSDK5.0状态的切换(20分钟)9.实验5：开放性试验(20分钟)10.实验总结及问答(45分钟)©2018STMicroelectronics-保留所有权利1.MCSDK5.0算法的理论基础©2018STMicroelectronics-保留所有权利MCSDK5.0算法概述4目标电机：三相永磁同步电动机（直流无刷电动机）控制方法：矢量控制三相PWM输出方法：SVPWM相电流检测方法：单电阻电流检测和重构方式三电阻电流检测和重构方式隔离型电流传感器检测电流（DCCT或者ACCT）转子位置检测方法霍尔效应位置传感器光电增量编码器无位置传感器的转子速度和位置估计算法o基于估计感应电压的转子位置和速度估计算法o基于高频载波注入的转子位置和估计算法©2018STMicroelectronics-保留所有权利三相永磁同步电动机(直流无刷电动机)5永磁同步电动机(直流无刷电动机）内转子/外转子集中绕组/分布绕组表面贴装磁石或内嵌式磁石转子绕组(定子)©2018STMicroelectronics-保留所有权利MCSDK5.0应用的永磁同步电动机的数学模型6名称方程式电压方程𝑈𝑑𝑈𝑞=𝑟+𝑑𝑑𝑡𝐿𝑑−𝐿𝑞𝜔𝑒𝐿𝑑𝜔𝑒𝑟+𝑑𝑑𝑡𝐿𝑞𝐼𝑑𝐼𝑞+0𝑘𝐸𝜔𝑒转矩方程𝜏𝑒=32𝑝𝑘𝐸+𝐿𝑑−𝐿𝑞𝐼𝑑𝐼𝑞弱磁控制条件𝐿𝑞𝐼𝑞2+𝑘𝐸+𝐿𝑑𝐼𝑑2≤𝑈1−𝑙𝑖𝑚𝑖𝑡2𝜔𝑒2动力学方程𝜏𝑒−𝜏𝐿=𝐽𝑑𝜔𝑟𝑑𝑡+𝐵𝜔𝑟©2018STMicroelectronics-保留所有权利矢量控制—矢量变换7项目电压电流αβ-dqdq-αβ变换前后功率和幅值都不改变。变换矩阵可以使用同一个矩阵，但是输入量需要逆序输入，输出量需要顺序输出uuttttUUqdcossinsincosiittttIIqdcossinsincosdqUUttttuucossinsincosdqIIttttiicossinsincos变换内容变换前后幅值不变变换前后瞬时功率不变从三相到两相的变换电压𝑢𝛼𝑢𝛽=101323𝑢𝐴𝑢𝐵𝑢𝛼𝑢𝛽=3201222𝑢𝐴𝑢𝐵电流𝑖𝛼𝑖𝛽=101323𝑖𝐴𝑖𝐵𝑖𝛼𝑖𝛽=3201222𝑖𝐴𝑖𝐵从两相到三相的变换电压𝑢𝐴𝑢𝐵𝑢𝐶=10−12−32−1232𝑢𝛼𝑢𝛽𝑢𝐴𝑢𝐵𝑢𝐶=2310−12−32−1232𝑢𝛼𝑢𝛽电流𝑖𝐴𝑖𝐵𝑖𝐶=10−12−32−1232𝑖𝛼𝑖𝛽𝑖𝐴𝑖𝐵𝑖𝐶=2310−12−32−1232𝑖𝛼𝑖𝛽瞬时功率𝑝3=32𝑝2𝑝3=𝑝2电磁力矩𝜏𝑒=32𝑝𝑘𝐸+𝐿𝑑−𝐿𝑞𝐼𝑑𝐼𝑞𝜏𝑒=𝑝𝑘𝐸+𝐿𝑑−𝐿𝑞𝐼𝑑𝐼𝑞©2018STMicroelectronics-保留所有权利矢量控制—双闭环控制器8KPKI/sPlant+-S.V.P.V.ε++NoiseC.V.+-控制器设定值S.V.实际值P.V.控制值C.V.对象传递函数速度控制器fr-ref(fr*)fr-fb(fr)τref(τ*)orIq-ref(Iq*)1𝐽𝑠+𝐵电流控制器（忽略dq之间的耦合）Id/q-ref(Id/q*)Id/q-fb(Id/q)Ud/q-ref(Ud/q*)1𝐿𝑑/𝑞𝑠+𝑟©2018STMicroelectronics-保留所有权利矢量控制—电流前馈9∆𝑈𝑑=−𝐿𝑞𝐼𝑞2𝜋𝑝𝑓𝑟∆𝑈𝑞=(𝑘𝐸+𝐿𝑑𝐼𝑑)2𝜋𝑝𝑓𝑟Lq2πpLdKKId*Iq*fr++-1++∆Uq∆UdUq2*Ud2*Uq*Ud*kE©2018STMicroelectronics-保留所有权利矢量控制—MTPA与弱磁控制10IncreasingspeedIncreasingtorqueMTPA:𝐼𝑑=−𝑘𝐸2𝐿𝑑−𝐿𝑞+𝑠𝑖𝑔𝑛𝐿𝑑−𝐿𝑞𝑘𝐸2𝐿𝑑−𝐿𝑞2+𝐼𝑞2,𝐿𝑑≠𝐿𝑞0,𝐿𝑑=𝐿𝑞弱磁:𝐼𝑑=−𝑘𝐸𝐿𝑑+𝑈1−𝑙𝑖𝑚𝑖𝑡𝜔𝑒2−𝐿𝑞𝐼𝑞2𝐿𝑑,𝑈1−𝑙𝑖𝑚𝑖𝑡𝜔𝑒≥𝐿𝑞𝐼𝑑𝑛/𝑎,𝑈1−𝑙𝑖𝑚𝑖𝑡𝜔𝑒𝐿𝑞𝐼𝑑𝑠𝑖𝑔𝑛𝑥=1,𝑥00,𝑥=0−1,𝑥0©2018STMicroelectronics-保留所有权利矢量控制—SVPWM(1/3)11uectorQ1(Q4)Q3(Q6)Q5(Q2)UAN[u]UBN[u]UCN[u]UAO[u]UBO[u]UCO[u]𝑈0OFF(ON)OFF(ON)OFF(ON)000000𝑈1ON(OFF)OFF(ON)OFF(ON)Ubus002Ubus/3-Ubus/3-Ubus/3𝑈2ON(OFF)ON(OFF)OFF(ON)UbusUbus0Ubus/3Ubus/3-2Ubus/3𝑈3OFF(ON)ON(OFF)OFF(ON)0Ubus0-Ubus/32Ubus/3-Ubus/3𝑈4OFF(ON)ON(OFF)ON(OFF)0UbusUbus-2Ubus/3Ubus/3Ubus/3𝑈5OFF(ON)OFF(ON)ON(OFF)00Ubus-Ubus/3-Ubus/32Ubus/3𝑈6ON(OFF)OFF(ON)ON(OFF)Ubus0UbusUbus/3-2Ubus/3-Ubus/3𝑈7ON(OFF)ON(OFF)ON(OFF)UbusUbusUbus000©2018STMicroelectronics-保留所有权利矢量控制—SVPWM(2/3)1260°θunukuβ𝑈1𝑈2𝑈3𝑈4𝑈5𝑈6𝑈60°θunukIIIIIIVVVII𝑈𝑈1𝑈2𝑈3𝑈4𝑈5𝑈6𝑈𝑇=𝑇1𝑈𝑛+𝑇2𝑈𝑘𝑇≥𝑇1+𝑇2SectorIIIIIIIVVVIn133551k224466𝑈sin(180°−60°)=𝑢𝑛𝑜𝑟𝑘sin(60°−𝜃)=𝑢𝑘𝑜𝑟𝑛sin𝜃,0°≤𝜃≤60°𝑇=𝑇0+𝑇1+𝑇2+𝑇7𝑢𝛼=𝑈cos(60°𝑠𝑒𝑐𝑡𝑜𝑟𝑛𝑜.−1+𝜃)𝑢𝛽=−𝑈sin(60°𝑠𝑒𝑐𝑡𝑜𝑟𝑛𝑜.−1+𝜃)©2018STMicroelectronics-保留所有权利矢量控制—SVPWM(3/3)13sectortAtBtCIT/2+(X–Z)/2tA+ZtB–XIIT/2+(Y–Z)/2tA+ZtA–YIIIT/2+(Y–X)/2tC+XtA–YIVT/2+(X–Z)/2tA+ZtB–XVT/2+(Y–Z)/2tA+ZtA–YVIT/2+(Y–X)/2tC+XtA–YBynormalization,if𝑈′=𝑈32,because,if𝑈𝑛=1,𝑛=1,2,3,4,5,6;then𝑈𝑚𝑎𝑥=32,therefore,𝑈′=1.©2018STMicroelectronics-保留所有权利电流采样—单电阻(2/8)15VectorA(X)B(Y)C(Z)Ishunt𝑈0OFF(ON)OFF(ON)OFF(ON)0𝑈1ON(OFF)OFF(ON)OFF(ON)iA𝑈2ON(OFF)ON(OFF)OFF(ON)-iC𝑈3OFF(ON)ON(OFF)OFF(ON)iB𝑈4OFF(ON)ON(OFF)ON(OFF)-iA𝑈5OFF(ON)OFF(ON)ON(OFF)iC𝑈6ON(OFF)OFF(ON)ON(OFF)-iB𝑈7ON(OFF)ON(OFF)ON(OFF)0ABCAXBCYZIshuntIIIIIIVVVI𝑈1𝑈2𝑈3𝑈4𝑈5𝑈6I©2018STMicroelectronics-保留所有权利电流采样—单电阻(3/8)16CCRmaxCCRmidCCRminMAX_HIMAX_LOMID_HIMID_LOMIN_HIMIN_LOifTADCtriggerdelayTring,needlesstoaddTringavailablecurrentsignaldetectionpulsewidthis:Min_pulsewidth=Tdead+Ton+TADCtriggerdelay+TADCs/helse,availablecurrentsignaldetectionpulsewidthis:Min_pulsewidth=Tdead+Ton+Tring+TADCs/hADCtriggerpoint:Point1)CCRmid-TADCtriggerdelay-TADCs/h-Point2)ifTADCtriggerdelayTringCCRmid+Tdead+Ton+Tring-TADCtriggerdelayElseCCRmid+Tdead+Ton+TADCtriggerdelay©2018STMicroelectronics-保留所有权利电流采样—单电阻(4/8)17T0/2T1/2T2/2T7T2/2T1/2T0/2T0/2T1/2T2/2T7T2/2T1/2T0/2T0/2T1/2T2/2T7T2/2T1/2T0/2©2018STMicroelectronics-保留所有权利电流采样—单电阻(5/8)18ST专利(Pat.Pub.No.:US20090284194A1)解决单电阻无法采样问题T0/2T1/2T2/2T7T2/2T1/2T0/2T0/2T1/2T2/2T7T2/2T1/2T0/2T7TMINST专利US20090284194A1©2018STMicroelectronics-保留所有权利电流采样—单电阻(6/8)19ST专利(Pat.Pub.No.:US20090284194A1)解决单电阻无法采样问题T0/2T1/2T2/2T7T2/2T1/2T0/2T0/2T1/2T2/2T7T2/2T1/2T0/2T7TMINST专利US20090284194A1©2018STMicroelectronics-保留所有权利电流采样—单电阻(7/8)20ST专利(Pat.Pub.No.:US20090284194A1)解决单电阻无法采样问题T0/2T1/2T2/2T7T2/2T1/2T0/2T0/2T1/2T7T1/2T0/2T7TMINST专利US20090284194A1©2018STMicroelectronics-保留所有权利电流采样—单电阻(8/8)21ST专利(Pat.Pub.No.:US20090284194A1)解决单电阻无法采样问题T0/2T1/2T2/2T7T2/2T1/2T0/2T0/2T1/2T2/2T7T2/2T1/