2N60L中文资料

UNISONICTECHNOLOGIESCO.,LTD2N60LPowerMOSFET©2008UnisonicTechnologiesCo.,LtdQW-R502-182,A2Amps,600/650VoltsN-CHANNELMOSFET„DESCRIPTIONTheUTC2N60LisahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowersupplies,PWMmotorcontrols,highefficientDCtoDCconvertersandbridgecircuits.„FEATURES*RDS(ON)=5Ω@VGS=10V*UltraLowgatecharge(typical9.0nC)*Lowreversetransfercapacitance(CRSS=typical5.0pF)*Fastswitchingcapability*Avalancheenergyspecified*Improveddv/dtcapability,highruggedness„SYMBOL1.Gate3.Source2.Drain*Pb-freeplatingproductnumber:2N60LL„ORDERINGINFORMATIONOrderingNumberPinAssignmentNormalLeadFreePlatingPackage123Packing2N60L-x-TA3-T2N60LL-x-TA3-TTO-220GDSTube2N60L-x-TF3-T2N60LL-x-TF3-TTO-220FGDSTube2N60L-x-TM3-T2N60LL-x-TM3-TTO-251GDSTube2N60L-x-TN3-R2N60LL-x-TN3-RTO-252GDSTapeReel2N60L-x-TN3-T2N60LL-x-TN3-TTO-252GDSTubeNote:PinAssignment:G:GateD:DrainS:Source2N60LPowerMOSFETUNISONICTECHNOLOGIESCO.,LTD2of8„ABSOLUTEMAXIMUMRATINGS(TC=25,unlessotherwisespecified)PARAMETERSYMBOLRATINGSUNIT2N60L-A600VDrain-SourceVoltage2N60L-BVDSS650VGate-SourceVoltageVGSS±30VAvalancheCurrent(Note1)IAR2.0ATC=25°C2.0ADrainCurrentContinuousTC=100°CID1.26ADrainCurrentPulsed(Note1)IDP8.0ASinglePulsed(Note2)EAS140mJAvalancheEnergyRepetitive(Note1)EAR4.5mJPeakDiodeRecoverydv/dt(Note3)dv/dt4.5V/nsTO-22032WTO-220F9WTO-25125WTotalPowerDissipationTO-252PD20WJunctionTemperatureTJ+150OperatingTemperatureTOPR-55~+150StorageTemperatureTSTG-55~+150Note:Absolutemaximumratingsarethosevaluesbeyondwhichthedevicecouldbepermanentlydamaged.Absolutemaximumratingsarestressratingsonlyandfunctionaldeviceoperationisnotimplied.„THERMALDATAPARAMETERPACKAGESYMBOLRATINGSUNITTO-25165TO-25258TO-22043ThermalResistanceJunction-AmbientTO-220FθJA38TO-2515TO-2526TO-2204ThermalResistanceJunction-CaseTO-220FθJc12/W„ELECTRICALCHARACTERISTICS(TJ=25,unlessotherwisespecified)PARAMETERSYMBOLTESTCONDITIONSMINTYPMAXUNITOFFCHARACTERISTICS2N60L-A600VDrain-SourceBreakdownVoltage2N60L-BBVDSSVGS=0V,ID=250µA650VDrain-SourceLeakageCurrentIDSSVDS=600V,VGS=0V10µAForwardVGS=30V,VDS=0V100nAGate-SourceLeakageCurrentReverseIGSSVGS=-30V,VDS=0V-100nABreakdownVoltageTemperatureCoefficientBVDSS/TJID=250µA,Referencedto25°C0.4V/ONCHARACTERISTICSGateThresholdVoltageVGS(TH)VDS=VGS,ID=250µA2.04.0VStaticDrain-SourceOn-StateResistanceRDS(ON)VGS=10V,ID=1A3.85ΩDYNAMICCHARACTERISTICSInputCapacitanceCISS270350pFOutputCapacitanceCOSS4050pFReverseTransferCapacitanceCRSSVDS=25V,VGS=0V,f=1MHz57pF2N60LPowerMOSFETUNISONICTECHNOLOGIESCO.,LTD3of8„ELECTRICALCHARACTERISTICS(Cont.)PARAMETERSYMBOLTESTCONDITIONSMINTYPMAXUNITSWITCHINGCHARACTERISTICSTurn-OnDelayTimetD(ON)1030nsTurn-OnRiseTimetR2560nsTurn-OffDelayTimetD(OFF)2050nsTurn-OffFallTimetFVDD=300V,ID=2.4A,RG=25Ω(Note4,5)2560nsTotalGateChargeQG9.011nCGate-SourceChargeQGS1.6nCGate-DrainChargeQGDVDS=480V,VGS=10V,ID=2.4A(Note,5)4.3nCDRAIN-SOURCEDIODECHARACTERISTICSDrain-SourceDiodeForwardVoltageVSDVGS=0V,ISD=2.0A1.4VContinuousDrain-SourceCurrentISD2.0APulsedDrain-SourceCurrentISM8.0AReverseRecoveryTimetRR180nsReverseRecoveryChargeQRRVGS=0V,ISD=2.4A,di/dt=100A/µs(Note4)0.72µCNote:1.RepetitiveRating:PulsewidthlimitedbyTJ2.L=64mH,IAS=2.0A,VDD=50V,RG=25Ω,StartingTJ=25°C3.ISD≤2.4A,di/dt≤200A/µs,VDD≤BVDSS,StartingTJ=25°C4.PulseTest:Pulsewidth≤300µs,Dutycycle≤2%5.Essentiallyindependentofoperatingtemperature2N60LPowerMOSFETUNISONICTECHNOLOGIESCO.,LTD4of8„TESTCIRCUITSANDWAVEFORMSSameTypeasD.U.T.LVDDDriverVGSRG-VDSD.U.T.+*dv/dtcontrolledbyRG*ISDcontrolledbypulseperiod*D.U.T.-DeviceUnderTestP.W.PeriodD=VGS(Driver)ISD(D.U.T.)IFM,BodyDiodeForwardCurrentdi/dtIRMBodyDiodeReverseCurrentBodyDiodeRecoverydv/dtBodyDiodeForwardVoltageDropVDD10VVDS(D.U.T.)-+VGS=P.W.PeriodFig.1APeakDiodeRecoverydv/dtTestCircuitFig.1BPeakDiodeRecoverydv/dtWaveforms2N60LPowerMOSFETUNISONICTECHNOLOGIESCO.,LTD5of8„TESTCIRCUITSANDWAVEFORMS(Cont.)Fig.2ASwitchingTestCircuitFig.2BSwitchingWaveformsFig.3AGateChargeTestCircuitFig.3BGateChargeWaveformFig.4AUnclampedInductiveSwitchingTestCircuitFig.4BUnclampedInductiveSwitchingWaveforms2N60LPowerMOSFETUNISONICTECHNOLOGIESCO.,LTD6of8„TYPICALCHARACTERISTICSCapacitance(pF)Gate-SourceVoltage,VGS(V)2N60LPowerMOSFETUNISONICTECHNOLOGIESCO.,LTD7of8„TYPICALCHARACTERISTICS(Cont.)Drain-SourceBreakdownVoltage,VDSS(Normalized)Drain-SourceOn-Resistance,RDS(ON)(Normalized)DrainCurrent,ID(A)DrainCurrent,ID(A)2N60LPowerMOSFETUNISONICTECHNOLOGIESCO.,LTD8of8(suchasmaximumratings,operatingconditionranges,orotherparameters)listedinproductsspecifications