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©SemiconductorComponentsIndustries,LLC,2013October,2016−Rev.81PublicationOrderNumber:2N7002L/D2N7002L,2V7002LSmallSignalMOSFET60V,115mA,N−ChannelSOT−23Features•2VPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements;AEC−Q101QualifiedandPPAPCapable(2V7002L)•TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliantMAXIMUMRATINGSRatingSymbolValueUnitDrain−SourceVoltageVDSS60VdcDrain−GateVoltage(RGS=1.0M)VDGR60VdcDrainCurrent−ContinuousTC=25°C(Note1)−ContinuousTC=100°C(Note1)−Pulsed(Note2)IDIDIDM±115±75±800mAdcGate−SourceVoltage−Continuous−Non−repetitive(tp≤50s)VGSVGSM±20±40VdcVpkTHERMALCHARACTERISTICSCharacteristicSymbolMaxUnitTotalDeviceDissipationFR−5Board(Note3)TA=25°CDerateabove25°CThermalResistance,Junction−to−AmbientPDRJA2251.8556mWmW/°C°C/WTotalDeviceDissipation(Note4)AluminaSubstrate,TA=25°CDerateabove25°CThermalResistance,Junction−to−AmbientPDRJA3002.4417mWmW/°C°C/WJunctionandStorageTemperatureTJ,Tstg−55to+150°CStressesexceedingthoselistedintheMaximumRatingstablemaydamagethedevice.Ifanyoftheselimitsareexceeded,devicefunctionalityshouldnotbeassumed,damagemayoccurandreliabilitymaybeaffected.1.ThePowerDissipationofthepackagemayresultinalowercontinuousdraincurrent.2.PulseTest:PulseWidth≤300s,DutyCycle≤2.0%.3.FR−5=1.0x0.75x0.062in.4.Alumina=0.4x0.3x0.025in99.5%alumina.312DevicePackageShipping†ORDERINGINFORMATION2N7002LT1GSOT−23(Pb−Free)3000Tape&ReelN−ChannelSOT−23CASE318STYLE21MARKINGDIAGRAM2132N7002LT3G10,000Tape&Reel−23(Pb−Free)3000Tape&Reel2V7002LT3G10,000Tape&Reel60V7.5@10V,500mARDS(on)MAX115mAIDMAXV(BR)DSS†Forinformationontapeandreelspecifications,includingpartorientationandtapesizes,pleaserefertoourTapeandReelPackagingSpecificationsBrochure,BRD8011/D.*Notfornewdesign.1702M(Note:Microdotmaybeineitherlocation)*DateCodeorientationand/orpositionmayvarydependinguponmanufacturinglocation.702=DeviceCodeM=DateCode*=Pb−FreePackage2N7002LT1H*3000Tape&Reel2N7002L,2V7002L(TA=25°Cunlessotherwisenoted)CharacteristicSymbolMinTypMaxUnitOFFCHARACTERISTICSDrain−SourceBreakdownVoltage(VGS=0,ID=10Adc)V(BR)DSS60−−VdcZeroGateVoltageDrainCurrentTJ=25°C(VGS=0,VDS=60Vdc)TJ=125°CIDSS−−−−1.0500AdcGate−BodyLeakageCurrent,Forward(VGS=20Vdc)IGSSF−−100nAdcGate−BodyLeakageCurrent,Reverse(VGS=−20Vdc)IGSSR−−−100nAdcONCHARACTERISTICS(Note5)GateThresholdVoltage(VDS=VGS,ID=250Adc)VGS(th)1.0−2.5VdcOn−StateDrainCurrent(VDS≥2.0VDS(on),VGS=10Vdc)ID(on)500−−mAStaticDrain−SourceOn−StateVoltage(VGS=10Vdc,ID=500mAdc)(VGS=5.0Vdc,ID=50mAdc)VDS(on)−−−−3.750.375VdcStaticDrain−SourceOn−StateResistance(VGS=10V,ID=500mAdc)TC=25°CTC=125°C(VGS=5.0Vdc,ID=50mAdc)TC=25°CTC=125°CrDS(on)−−−−−−−−7.513.57.513.5OhmsForwardTransconductance(VDS≥2.0VDS(on),ID=200mAdc)gFS80−−mSDYNAMICCHARACTERISTICSInputCapacitance(VDS=25Vdc,VGS=0,f=1.0MHz)Ciss−−50pFOutputCapacitance(VDS=25Vdc,VGS=0,f=1.0MHz)Coss−−25pFReverseTransferCapacitance(VDS=25Vdc,VGS=0,f=1.0MHz)Crss−−5.0pFSWITCHINGCHARACTERISTICS(Note5)Turn−OnDelayTime(VDD=25Vdc,ID500mAdc,RG=25,RL=50,Vgen=10V)td(on)−−20nsTurn−OffDelayTimetd(off)−−40nsBODY−DRAINDIODERATINGSDiodeForwardOn−Voltage(IS=11.5mAdc,VGS=0V)VSD−−−1.5VdcSourceCurrentContinuous(BodyDiode)IS−−−115mAdcSourceCurrentPulsedISM−−−800mAdc5.PulseTest:PulseWidth≤300s,DutyCycle≤2.0%.2N7002L,2V7002L(AMPS)rDS(on),STATICDRAIN-SOURCEON-RESISTANCE(NORMALIZED)VGS(th),THRESHOLDVOLTAGE(NORMALIZED)ID,DRAINCURRENT(AMPS)2.01.81.61.41.21.00.80.60.40.201001.02.03.04.05.06.07.08.09.0VDS,DRAINSOURCEVOLTAGE(VOLTS)Figure1.OhmicRegion1.00.80.60.40.21001.02.03.04.05.06.07.08.09.0VGS,GATESOURCEVOLTAGE(VOLTS)Figure2.TransferCharacteristics2.42.22.01.81.61.41.21.00.80.60.41.21.051.11.101.00.950.90.850.80.750.7-60-20+20+60+100+140-60-20+20+60+100+140T,TEMPERATURE(°C)Figure3.TemperatureversusStaticDrain−SourceOn−ResistanceT,TEMPERATURE(°C)Figure4.TemperatureversusGateThresholdVoltageTA=25°CVGS=10V9V8V7V6V4V3V5VVDS=10V-55°C25°C125°CVGS=10VID=200mAVDS=VGSID=1.0mA2N7002L,2V7002L−23(TO−236)CASE318−08ISSUEARSTYLE21:PIN1.GATE2.SOURCE3.DRAINDA1312NOTES:1.DIMENSIONINGANDTOLERANCINGPERASMEY14.5M,1994.2.CONTROLLINGDIMENSION:MILLIMETERS.3.MAXIMUMLEADTHICKNESSINCLUDESLEADFINISH.MINIMUMLEADTHICKNESSISTHEMINIMUMTHICKNESSOFTHEBASEMATERIAL.4.DIMENSIONSDANDEDONOTINCLUDEMOLDFLASH,PROTRUSIONS,ORGATEBURRS.VIEWCL0.25L1eEEbASEEVIEWCDIMAMINNOMMAXMINMILLIMETERS0.891.001.110.035INCHESA10.010.060.100.000b0.370.440.500.015c0.080.140.200.003D2.802.903.040.110E1.201.301.400.047e1.781.902.040.070L0.300.430.550.0120.0390.0440.0020.0040.0170.0200.0060.0080.1140.1200.0510.0550.0750.0800.0170.022NOMMAXL1H2.102.402.640.0830.0940.104HE0.350.540.690.0140.0210.027c0−−−100−−−10T°°°°T3XTOPVIEWSIDEVIEWENDVIEWSOLDERINGFOOTPRINT2.900.80DIMENSIONS:MILLIMETERS0.90PITCH3X3X0.95RECOMMENDEDONSemiconductorandaretrademarksofSemiconductorComponentsIndustries,LLCdbaONSemiconductororitssubsidiariesintheUni