IRLR8726 规格书



PowerMOSFETNotes

through
areonpage11D-PakIRLR8726PbFI-PakIRLU8726PbFSDGSDGGDSGateDrainSourceDDBenefits
VeryLowRDS(on)at4.5VVGS
Ultra-LowGateImpedance
FullyCharacterizedAvalancheVoltageandCurrent
Lead-Free
RoHScompliantApplications
HighFrequencySynchronousBuckConvertersforComputerProcessorPower
HighFrequencyIsolatedDC-DCConverterswithSynchronousRectificationforTelecomandIndustrialUse


VDSSRDS(on)maxQg(typ.)30V5.8m@VGS=10V15nCAbsoluteMaximumRatingsParameterUnitsVDSDrain-to-SourceVoltageVVGSGate-to-SourceVoltageID@TC=25°CContinuousDrainCurrent,VGS@10VID@TC=100°CContinuousDrainCurrent,VGS@10VAIDMPulsedDrainCurrentPD@TC=25°CMaximumPowerDissipationWPD@TC=100°CMaximumPowerDissipationLinearDeratingFactorW/°CTJOperatingJunctionand°CTSTGStorageTemperatureRangeSolderingTemperature,for10secondsThermalResistanceParameterTyp.Max.UnitsRθJCJunction-to-Case–––2.0RθJAJunction-to-Ambient(PCBMount)–––50°C/WRθJAJunction-to-Ambient–––11075Max.8661340±20300.538300(1.6mmfromcase)-55to+175


 2@TJ=25°C(unlessotherwisespecified)ParameterMin.Typ.Max.UnitsBVDSSDrain-to-SourceBreakdownVoltage30––––––V∆ΒVDSS/∆TJBreakdownVoltageTemp.Coefficient–––20–––mV/°CRDS(on)StaticDrain-to-SourceOn-Resistance–––4.05.8mΩ–––5.88.0VGS(th)GateThresholdVoltage1.351.802.35V∆VGS(th)/∆TJGateThresholdVoltageCoefficient–––-8.6–––mV/°CIDSSDrain-to-SourceLeakageCurrent––––––1.0µA––––––150IGSSGate-to-SourceForwardLeakage––––––100nAGate-to-SourceReverseLeakage––––––-100gfsForwardTransconductance73––––––SQgTotalGateCharge–––1523Qgs1Pre-VthGate-to-SourceCharge–––3.7–––Qgs2Post-VthGate-to-SourceCharge–––1.9–––nCQgdGate-to-DrainCharge–––5.7–––QgodrGateChargeOverdrive–––3.7–––SeeFig.15QswSwitchCharge(Qgs2+Qgd)–––7.6–––QossOutputCharge–––10–––nCRGGateResistance–––2.03.5Ωtd(on)Turn-OnDelayTime–––12–––trRiseTime–––49–––td(off)Turn-OffDelayTime–––15–––nstfFallTime–––16–––CissInputCapacitance–––2150–––CossOutputCapacitance–––480–––pFCrssReverseTransferCapacitance–––205–––AvalancheCharacteristicsParameterUnitsEASSinglePulseAvalancheEnergymJIARAvalancheCurrentADiodeCharacteristicsParameterMin.Typ.Max.UnitsISContinuousSourceCurrent––––––86(BodyDiode)AISMPulsedSourceCurrent––––––340(BodyDiode)VSDDiodeForwardVoltage––––––1.0VtrrReverseRecoveryTime–––2436nsQrrReverseRecoveryCharge–––5278nCƒ=1.0MHzVGS=4.5V,ID=20AVGS=20VVGS=-20VVDS=VGS,ID=50µAVDS=24V,VGS=0VVDS=24V,VGS=0V,TJ=125°CConditionsVGS=0V,ID=250µAReferenceto25°C,ID=1mAVGS=10V,ID=25AMOSFETsymbolVDS=15V,ID=20AVDS=15V,VGS=0VVDD=15V,VGS=4.5VID=20AVDS=15VConditionsSeeFig.13VGS=4.5VTJ=25°C,IF=20A,VDD=15Vdi/dt=300A/µsTJ=25°C,IS=20A,VGS=0Vshowingtheintegralreversep-njunctiondiode.Typ.––––––ID=20AVGS=0VVDS=15VRG=1.8ΩMax.12020
 (V)0.11101001000ID,Drain-to-SourceCurrent(A)≤60µsPULSEWIDTHTj=25°C2.5VVGSTOP10V5.0V4.5V3.5V3.3V3.0V2.7VBOTTOM2.5V0.1110100VDS,Drain-to-SourceVoltage(V)1101001000ID,Drain-to-SourceCurrent(A)≤60µsPULSEWIDTHTj=175°C2.5VVGSTOP10V5.0V4.5V3.5V3.3V3.0V2.7VBOTTOM2.5V0.02.04.06.08.0VGS,Gate-to-SourceVoltage(V)0.11101001000ID,Drain-to-SourceCurrent(A)VDS=15V≤60µsPULSEWIDTHTJ=25°CTJ=175°C-60-40-20020406080100120140160180TJ,JunctionTemperature(°C)0.51.01.52.0RDS(on),Drain-to-SourceOnResistance(Normalized)ID=25AVGS=10V
 4(V)100100010000C,Capacitance(pF)CossCrssCissVGS=0V,f=1MHZCiss=Cgs+Cgd,CdsSHORTEDCrss=CgdCoss=Cds+Cgd0481216202428323640QGTotalGateCharge(nC)024681012VGS,Gate-to-SourceVoltage(V)VDS=24VVDS=15VID=20A0.20.40.60.81.01.21.41.61.82.0VSD,Source-to-DrainVoltage(V)0.11101001000ISD,ReverseDrainCurrent(A)TJ=25°CTJ=175°CVGS=0V0.1110100VDS,Drain-toSourceVoltage(V)0.1110100100010000ID,Drain-to-SourceCurrent(A)TC=25°CTJ=175°CSinglePulse1msec10msecOPERATIONINTHISAREALIMITEDBYRDS(on)100µsec
 (°C)020406080100ID,DrainCurrent(A)LIMITEDBYPACKAGE-75-50-250255075100125150175TJ,Temperature(°C)0.51.01.52.02.5VGS(th)GatethresholdVoltage(V)ID=500µAID=50µAID=25µA1E-0061E-0050.00010.0010.010.1t1,RectangularPulseDuration(sec)0.0010.010.1110ThermalResponse(ZthJC)0.200.10D=0.500.020.010.05SINGLEPULSE(THERMALRESPONSE)Notes:1.DutyFactorD=t1/t22.PeakTj=PdmxZthjc+TcRi(°C/W)τι(sec)0.0142970.0000030.3733120.000091.0103260.0009730.6020650.007272τJτJτ1τ1τ2τ2τ3τ3R1R1R2R2R3R3Cii/RiCi=τi/RiττCτ4τ4R4R4
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