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DENKAInsulatedMetalSubstrateHITTPLATEDENKIKAGAKUKOGYOK.K.ＨＩＴＴＰＬＡＴＥ(IMS)ＨＩＴＴＰＬＡＴＥ(IMS)AudioPowerAMP.Pre-AMP.AudioPowerAMP.Pre-AMP.PowerElectronicsInverterTransistorMotordriverPowerElectronicsInverterTransistorMotordriverCommunicationHighfrequencyAMPOscillatorMicro-stripcircuitCommunicationHighfrequencyAMPOscillatorMicro-stripcircuitAutomotiveRegulatorEPSPowermoduleAutomotiveRegulatorEPSPowermoduleComputerCPUboardPowersupplyComputerCPUboardPowersupplyVTR,TVTunerRegulatorMotorregulatorVTR,TVTunerRegulatorMotorregulatorPowerSupplyDC/DCConverterSWregulatorPowerSupplyDC/DCConverterSWregulator：SuitablefieldforIMSThefieldsuitableforHybridICThefieldsuitableforHybridICNewUsageLEDNewUsageLEDCeramicsubstrateSubstratewiththickfilmcircuitSubstratewiththincircuit.SubstrateMulti-layerOrganicsubstrateRigidsubstrateフレキシブル基板Filmmaterial(polyimide,polyester)FlexiblesubstrateInsulatedMetalSubstrateMetalBaseSubstratewithMulti-Layer(FR-4)MetalCoreSubstrate(Al,Cu,Fe)MetalBaseSubstrate(Al,Cu,Fe)ClassificationofprintedcircuitboardClassificationofprintedcircuitboardPaperbasedmaterial(phenol)Glassclothbasedmaterial(epoxy,polyimide)Composite(combinationwithdifferentmaterials)ThermoplasticresinEvaluateitemInsulatedmetalsubstrateAluminasubstrateGlass-epoxysubstrateThermalresistanceºC/W0.6(80um)0.7(635um)3.41.6mmBreakdownvoltage○◎◎Heatresistance○◎○Dielectricconstant7-894-5Specificheat0.280.370.19Mechanicalstrength◎○Processing◎○Massprocess○△○*AlbasetypeComparisonofpropertieswitheachsubstrateComparisonofpropertieswitheachsubstrateMetalBase（Al,Cu,Fe,etc.)InsulatorConductor(Cufoil,etc.)TypicalstructureofIMSTypicalstructureofIMSNiplatingAlwireSemiconductorChipresistanceInsulatorAluminumboardPlasticcaseResinLeadterminalIMSTypicalstructureofHICTypicalstructureofHICImprovementofInsulator→Higherthermalconductivity,higherreliabilityandhigherheatresistance.DevelopmentperformanceofIMSDevelopmentperformanceofIMSRatedcurrent(A)Ratedvoltage(V)Aluminasubstrate50050100AlNsubstrateK-1K-12W/mKTH-1TH-14W/mKB-1B-18W/mKHITTPLATE(IMS)HigherthermalconductivityMarketrequestThermalconductivityAirconditionerIndustrialmachineAudioCostdown,downsizingandFieldofeachsubstrateFieldofeachsubstrateB-1TH-1K-1EL-1Usage:OnlyautomotiveUsage:Industry,LED,etc.HeatcyclereliabilityThermalconductivity(W/mK)M-2HighheatresistanceLineupofHITTPLATE’sinsulatorLineupofHITTPLATE’sinsulatorUsage:Consumerproducts,Industry,etc.1000.20.40.60.81.250100150200ThicknessofinsulatorThermalresistanceºC/W600650AluminasubstrateComparisonofHITTPLATEComparisonofHITTPLATETO-220（2SC2233)℃℃IMSB-1(8W/mK)type(0.125mmt)AluminaDBC(0.635mm)Max.temp.TestsamplehighlowTheresultsofthermalresistancebythermalviewerTheresultsofthermalresistancebythermalviewersubstratePropertyTestmethodunitK-1TH-1B-1ThermalconductivityLaserflashmethodW/mK2.04.08.0ThermalresistanceDKKmethodº/WＣ0.640.460.35ThicknessofinsulatorSEMum100125125DielectricbreakdownvoltagestepbystepkV6.86.35.2PeelstrengthBasedonJISC6481N/cm25.222.127.7TgTMAºＣ104165165Volumeresistivityat25ºＣΩcm4.3x10151.9x10166.1x1015Dielectricconctantat1MHz7.17.87.4Dielectriclosstangentat1MHz0.0040.0180.013TypicalpropertiesofsuperhighthermallyconductivetypeTypicalpropertiesofsuperhighthermallyconductivetypeＨＩＴＴPLATEEPSGeneratorDC/DCconverterSuspensioncontrollerECUDENKAHITTPLATEinAutomotiveDENKAHITTPLATEinAutomotiveRapiddiffusionto1000cc~2000cccarReliabilityagainstsoldercrackHighthermalconductivityHighheatresistanceLargecurrentReplacetoEPSInquiryFuelefficientwillbebetter3%comparedwithhydromechanicalpowersteeringImprovementtodecreasesoldercracksofbearchipTechnicaltrendofEPSTechnicaltrendofEPSCaseofheatupCaseofcooldownsolderChipresistorAshapeofsubstrateunderheatcycletestAshapeofsubstrateunderheatcycletestAluminumplateAluminumplateSoldercrackSolderChipresistorSoldercrack/CloseupSoldercrack/CloseupChipresistorSolderInsulatorAlbaseplateSoldercrackCufoilTypicalpropertiesofhighheatcyclereliabilitytype”EL-1”Typicalpropertiesofhighheatcyclereliabilitytype”EL-1”ItemsMeasurementcondition,etc.TH-1K-1EL-1Thermalconductivity(W/mK)4.02.02.4-2.7Glasstransitionpoint(0C)TMAmethodorDMAmethod165(TMA)104(TMA)57(DMA)Volumeresistivity(Ohmcm)ａｔ250C4.5X10164.3X10151.0ｘ1015Dielectricconstantａｔ1MHz7.27.07.4Dielectriclosstangentａｔ1MHz0.0040.0040.024Thicknessofdielectriclayer(um)SEM125(Ytype)100(Ytype)110Thermalresistance(0C/W)Denkamethod0.500.640.51-0.55Peelingstrength(N/cm)Normalcondition：BasedonJISC648122.125.219.6Dielectricbreakdownvoltage(ｋＶ)Normalcondition8.36.83.5*1:Stepbystepincreasing96hrsafterPCT（1210C,2atm）treatment8.25.53.8*1voltagemethod1000hrsafter850C,85%RH,DC100Vtreatment5.7*15.7*14.0*11000hrsafter1500C,DC100Vtreatment5.04.2*13.7*1Crackatsolderafterheat-cycle500cycles－630Liquid-LiquidRateofGrade-C,D(%)-400C(7min.)+1250C7min.)1000cycles－100312125chipresistormountedRateofGrade-C,D(%)Allfiguresinthetablesaretypicalvalues.*1Measuredwithcomb-shapedpattern.*250hrsafterPCTtreatment.Revised:08/23/'01Fig.2Gradeofcracksafterheatcycle2125TipresistorEutecticsolderGrade-ANocrackGrade-BCrackatconnection