半导体单晶抛光片清洗工艺分析

(,300220):Si,CaAs,Ge,,,,,;,,,:;;:TN30512;TN405:A:10032353X(2007)1221049203ResearchontheCleaningProcessofPolishedWaferofSemiconductorMaterialsZHAOQuan(The46thResearchInstitute,CETC,Tianjin300220,China)Abstract:Anewprocessconditionwasobtainedbyresearchingthecleaningprocessofthesingle2crystalpolishingwaferofsemiconductormaterials,suchasSi,GaAsandGe.Topolishtheparticleandthecontaminationabsorbedonthewafersurface,theoxidizationsolutionwasusedtooxidizethewafersurfacefirst,thenacertainmethodwasadoptedtoremovetheoxidesfromthewafersurface.Forthevariousmaterials,theoxidizationandtheremovingprocedurecouldbedoneindifferentsolutions;theoxidizationandtheremovingprocedurescouldbedoneinonemixturesimultaneouslybycombiningthematerials.Themechanismcanimprovetheprocessofsingle2crystalpolishedwaferofsemiconductormaterials,anddeveloptheprocessofnewmaterialpolishedwafer.Keywords:semiconductor;polishedwafer;processmechanismEEACC:2550;22201,,,[1],Si,RCA()Si,GaAs,Ge,,Si,GaAs,GeProcessTechniqueandMaterialsDecember2007SemiconductorTechnologyVol132No1121049©1994-2008ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.:DHFAPMHPMDHF:VHFVH2O=1100;APM:VNH4OHVH2O2VH2O=1220;HPM:VHClVH2O2VH2O=116GaAs:KOH+O3Ge:APM3311Si,,,SiSi,,;;,[2]DHFDHFSi,,SiAl,Fe,Zn,NiH2O2,Si,,SiDHFSi,HSi,SiSiH,Si,APMAPMNH4OH,H2O2,H2OH2O2,Si(SiO2),SiSiSiSiNH4OH,Si,HPMHPMHCl,H2O2,H2O,Si,:Na,Fe,Mg,AlSiSiO2SiSi,HPMSi,HPM,HPM,312GaAs,GaAs,Ga2O3,As2O3As2O5GaAs,,GaAsGa,GaAs11GaAs,Ga2O3As2O3,GaAsKOHGaGa2O3,As2O3As2O5KOH,KOHGaAsKOH,KOH,GaAs,+O3,,O3GaAs,GaAs[3],O2O3O2+hO+OO+O2O3O3+hO+O2,,GaAs:10503212200712©1994-2008ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.(8001200kHz),,,,,;,313Ge,Ge,GeOGeO2,GeO,GeOGeO2[4]Ge+OGeOGeO+OGeO2GeO2+H2OH2GeO3GeO2,2,;,GeO2,,GeOGeO2GeO600650,GeO211501200[5]GeMOCVD,MOCVDGaAs700,MOCVDGaAs,GeO2GaAsGeGaAs,GeGeO231311,,CO2H2O,APM,,APMAPMNH4OH,H2O2,H2O,H2O2,Ge,NH4OH,Ge,,GeO2GeAPM,,GeO2,GeO2,Ge4:SiGaAsGe,,,,,:[1],,.[J].,2003,21(12):1442147.[2].[M].:,1988:54259.[3].[D].,2003:58262.[4],.[M].,2005:65266.[5].[M].,1987:34236.(:2007207202):(1976),,,:December2007SemiconductorTechnologyVol132No1121051©1994-2008ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.