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AdvancedTopicsinCircuitDesign(usingADS2002)LAB1:ModelingTechniquesOBJECTIVES•Usevariousdevicesinsimulations•Extractparametersforamodel•UseanSDDinanoptimization•UseModelBinning•UseSDD’stomodelanamplifierandnonlinearresistor•UseanFDDtomodeladoublerLab1:ModelingTechniques1-2CopyrightAgilentTechnologies2002TABLEOFCONTENTS1.StartADSonyourcomputerandcopytheproject................................................32.MODELS_prj...............................................................................................................32.1.DIODEModel.......................................................................................................32.1.1.BB535_Model.dsn.........................................................................................32.1.2.DIODE_Extraction_of_N.dsn......................................................................62.2.BJTModel..........................................................................................................102.2.1.AT30500.dsn................................................................................................102.2.2.AT30500_IC_VCE_Curves.dsn..................................................................122.2.3.AT30500_IC_and_IB_vs_VBE.dsn............................................................132.2.4.AT30500_Extraction_of_IS_and_NF.dsn.................................................142.3.ModelBinning....................................................................................................162.3.1.Model_Binning_BJT_Example.dsn..........................................................162.3.2.Model_Binning_MOSFET_Example.dsn.................................................193.VENDOR_MODELS_prj..........................................................................................233.1.AT36ChipPHEMT............................................................................................233.1.1.ATF36_CHIP_MODEL.dsn.........................................................................233.2.ATF36077PackagedPHEMT...........................................................................253.2.1.ATF36077_HB_Convergence.dsn.............................................................254.SDD_EXAMPLES_prj..............................................................................................274.1.1.Amplifier_Model_DC.dsn..........................................................................274.1.2.Amplifier_Model_HB.dsn..........................................................................304.1.3.Nonlinear_Resistor_DC.dsn......................................................................314.1.4.Nonlinear_Resistor_HB.dsn......................................................................325.FDD_EXAMPLES_prj..............................................................................................335.1.1.FDD_DOUBLER_HB.dsn...........................................................................336.References................................................................................................................37Lab1:ModelingTechniquesCopyrightAgilentTechnologies20021-3PROCEDURE1.StartADSonyourcomputerandcopytheprojectProjectfilesusedinthiscourseshouldbecopiedtoyourcomputerasneeded.TheprojectfilesarelocatedintheADSExamples\Training\ADVCKTdirectory.YoucanusetheADSmainwindowcommand:FileCopyProject,thenselecttheExamplesDirectoryandBrowsetoeachprojectasyouneedit,asshownhere:NOTE:Theinstructionsforcopyingtheprojectfileswillnotbegivenagain.2.MODELS_prj2.1.DIODEModel2.1.1.BB535_Model.dsn2.1.1.1.CopyandOpentheproject“MODELS_prj”,andthenopentheschematic“BB535_Model.dsn”insidethisproject.Notetheredtextisjustcommenttext.Thesearethediodemodelparameters.Lab1:ModelingTechniques1-4CopyrightAgilentTechnologies20022.1.1.2.Hereisourdiode:2.1.1.3.HerearetheequationsthatdescribetheDCforwardandreversecharacteristicsofourdiodejunction:(forwardbiased:VD0)ID=IS*(e(q*VD/(N*k*T))–1)(reversebiased:VD0)ID=-ISwhere:k=1.38x10-23J/K(Boltzmann’sConstant)q=1.602x10-19C(chargeonelectron)T=298.15Kelvin(25degC)(youcanalsoseethisonpage19ofMassobrioandAntognetti,seereferencesatendoflab)2.1.1.4.NotethevalueofNforourBB535diode.N=1.027831Nistheforwardemissioncoefficientofthediode.Foridealdiodes,N=1.0.Lab1:ModelingTechniquesCopyrightAgilentTechnologies20021-52.1.1.5.NotethevalueofISforourBB535diode.IS=0.919fAISisthesaturationcurrentofthediode.ISrelatestoboththeforwardandreversecharacteristicsofthediode,asseenabove.2.1.1.6.NotethevalueofRSforourBB535diode.RS=0.094949OhmsRSdenotesaparasiticresistanceinserieswithourdiode.Ourvalueof0.094949Ohmsisalmostnegligibleunlesshighcurrentsarerunthroughthediode.2.1.1.7.NotethevalueofLSforourBB535diode.LS=1.97nHLSisaparasiticinductanceinserieswithourdiode.LScausesachangeintheeffectivecapacitanceofourdiode.ThiseffectivecapacitancechangewillbeanimportanteffectinalaterlabwhenweusethisBB535diodeasavaractor(voltagetunablecapacitor).2.1.1.8.Hereistheequationforthediode’sreverse-biasjunctioncapacitance(rever