BC857贴片三极管规格书

JIANGSUCHANGJIANGELECTRONICSTECHNOLOGYCO.,LTDSOT-23Plastic-EncapsulateTransistorsBC856A,BTRANSISTOR(PNP)BC857A,B,CBC858A,B,CFEATURESyIdeallysuitedforautomaticinsertionyForSwitchingandAFAmplifierApplicationsMAXIMUMRATINGS(Ta=25℃unlessotherwisenoted)SymbolParameterValueUnitVCBOCollector-BaseVoltageBC856BC857BC858-80-50-30VVCEOCollector-EmitterVoltageBC856BC857BC858-65-45-30VVEBOEmitter-BaseVoltage-5VICCollectorCurrent–Continuous-0.1APCCollectorPowerDissipation200mWTJJunctionTemperature150℃TstgStorageTemperature-65-150℃DEVICEMARKINGBC856A=3A;BC856B=3B;BC857A=3E;BC857B=3F;BC857C=3G;BC858A=3J;BC858B=3K;BC858C=3LSOT-231.BASE2.EMITTER3.COLLECTORB,Jul,2013【南京南山半导体有限公司—长电贴片三极管选型资料】ELECTRICALCHARACTERISTICS(Ta=25℃unlessotherwisespecified)ParameterSymbolTestconditionsMinMaxUnitCollector-basebreakdownvoltageBC856BC857BC858VCBOIC=-10μA,IE=0-80-50-30VCollector-emitterbreakdownvoltageBC856BC857BC858VCEOIC=-10mA,IB=0-65-45-30VEmitter-basebreakdownvoltageVEBOIE=-1μA,IC=0-5VCollectorcut-offcurrentBC856BC857BC858ICBOVCB=-70V,IE=0VCB=-45V,IE=0VCB=-25V,IE=0-0.1μACollectorcut-offcurrentBC856BC857BC858ICEOVCE=-60V,IB=0VCE=-40V,IB=0VCE=-25V,IB=0-0.1μAEmittercut-offcurrentIEBOVEB=-5V,IC=0-0.1μADCcurrentgainBC856A,857A,858ABC856B,857B,858BBC857C,BC858ChFEVCE=-5V,IC=-2mA125220420250475800Collector-emittersaturationvoltageVCE(sat)IC=-100mA,IB=-5mA-0.5VBase-emittersaturationvoltageVBE(sat)IC=-100mA,IB=-5mA-1.1VTransitionfrequencyfTVCE=-5V,IC=-10mAf=100MHz100MHzCollectorcapacitanceCobVCB=-10V,f=1MHz4.5pFB,Jul,2013【南京南山半导体有限公司—长电贴片三极管选型资料】-0.1-1-10110-0.1-1-10-100101000255075100125150050100150200250-0-2-4-6-8-0-2-4-6-8-0.1-1-10-100101001000-0.1-1-10-100-0.1-1-0.0-0.3-0.6-0.9-1.2-0.1-1-10-100-0.1-1-10-100-0.01-0.1-1-20f=1MHzIE=0/IC=0Ta=25℃VCB/VEBCob/Cib——CobCibCAPACITANCEC(pF)REVERSEVOLTAGEVR(V)30COMMONEMITTERVCE=-5VTa=25℃TRANSITIONFREQUENCYfT(MHz)COLLECTORCURRENTIC(mA)500PC——TaCOLLECTORPOWERDISSIPATIONPC(mW)AMBIENTTEMPERATURETa()℃-9uA-12uA-15uA-18uA-24uA-30uA-27uA-21uACOMMONEMITTERTa=25℃-6uAIB=-3uAStaticCharacteristicCOLLECTORCURRENTIC(mA)COLLECTOR-EMITTERVOLTAGEVCE(V)COMMONEMITTERVCE=-5VICTa=25℃Ta=100℃DCCURRENTGAINhFECOLLECTORCURRENTIC(mA)ICfT——hFE——β=20ICVBEsat——Ta=100℃Ta=25℃BASE-EMITTERSATURATIONVOLTAGEVBEsat(V)COLLECTORCURRENTIC(mA)-2COMMONEMITTERVCE=-5VBC856,BC857,BC858TypicalCharacterisiticsVBEIC——Ta=100℃Ta=25℃COLLECTORCURRENTIC(mA)BASE-EMMITERVOLTAGEVBE(V)β=20Ta=100℃Ta=25℃ICVCEsat——COLLECTOR-EMITTERSATURATIONVOLTAGEVCEsat(V)COLLECTORCURRENTIC(mA)B,Jul,2013Min.Max.Min.Max.A0.9001.1500.0350.045A10.0000.1000.0000.004A20.9001.0500.0350.041b0.3000.5000.0120.020c0.0800.1500.0030.006D2.8003.0000.1100.118E1.2001.4000.0470.055E12.2502.5500.0890.100ee11.8002.0000.0710.079LL10.3000.5000.0120.020θ0°8°0°8°0.550REF.0.022REF.SymbolDimensionsInInchesDimensionsInMillimeters0.950TYP.0.037TYP.【南京南山半导体有限公司—长电三极管选型资料】ThebottomgasketThetopgasket3000×1PCS3000×15PCSLabelontheReelLabelontheInnerBoxLabelontheOuterBoxQALabelSealtheboxwiththetapeSealtheboxwiththetapeStamp“EMPTY”ontheemptyboxInnerBox:210mm×208mm×203mmOuterBox:440mm×440mm×230mm