FODM3053中文资料

PACKAGEDIMENSIONS11/10/03Page1of8©2003FairchildSemiconductorCorporation4-PINFULLPITCHMINI-FLATPACKAGERANDOMPHASETRIACDRIVEROUTPUTOPTOCOUPLERSFODM3051FODM3052FODM3053DESCRIPTIONTheFODM305Xseriesconsistsofagaliumarsenidediodedrivingasiliconbilateralswitchhousedinacompact4-pinmini-flatpackage.Theleadpitchis2.54mm.TheFODM305Xseriesisolateslowvoltagelogicfrom115and240Vaclinestoproviderandomphasecontrolofhighcurrenttriacsorthyristors.Italsofeaturesgreatlyenhancedstaticdv/dtcapabilitytoensurestableswitchingperformanceofinductiveloads.FEATURES•Compact4-pinsurfacemountpackage(2.4mmmaximumstandoffheight)•Peakblockingvoltage–600V•Guaranteedstaticdv/dtof1000V/µs•Availableintapeandreelquantitiesof500and2500.•ApplicabletoInfraredRayreflow(230°Cmax,30seconds.)•BSI,CSAandVDEcertificationspending•UL(File#E90700)certifiedAPPLICATIONS•Solenoid/valvecontrols•Interfacingmicroprocessorsto115and240Vacperipherals•Temperaturecontrols•Solidstaterelays•Lampballast•StaticACpowerswitch•Motorcontrol•IncandescentlampdimmersABSOLUTEMAXIMUMRATINGS(TA=25°Cunlessotherwisespecified)ParameterSymbolValueUnitsTOTALPACKAGEStorageTemperatureTSTG-40to+125°CJunctionTemperatureTJ125°COperatingTemperatureTOPR-40to+85°CEMITTERContinuousForwardCurrentIF(avg)60mAPeakForwardCurrent(1µspulse,300pps.)IF(pk)1AReverseInputVoltageVR3VPowerDissipationPD100mW(Noderatingrequiredoveroperatingtemp.range)DETECTORIT(RMS)70mA(RMS)On-StateRMSCurrentOff-StateOutputTerminalVoltageVDRM600VPowerDissipationPD250mW(Noderatingrequiredoveroperatingtemp.range)NOTEAlldimensionsareininches(millimeters)0.287(7.29)0.248(6.30)0.020(0.51)0.012(0.30)0.169(4.29)0.154(3.91)0.173(4.40)TYP0.035(0.89)0.012(0.30)0.008(0.20)0.000(0.0)0.100(2.54)TY0.026(0.66)P0.033(0.85)0.026(0.65)0.094(2.39)0.079(2.01)PIN11243MAINTERMINALMAINTERMINALANODECATHODE4-PINFULLPITCHMINI-FLATPACKAGERANDOMPHASETRIACDRIVEROUTPUTOPTOCOUPLERSFODM3051FODM3052FODM305311/10/03Page2of8©2003FairchildSemiconductorCorporation*AlltypicalsatTA=25°CNote1.Testvoltagemustbeappliedwithindv/dtrating.2.Thisisstaticdv/dt.SeeFigure1fortestcircuit.Commutatingdv/dtisfunctionoftheload-drivingthyristor(s)only.3.AlldevicesareguaranteedtotriggeratanIFvaluelessthanorequaltomaxIFT.Therefore,recommendedoperatingIFliesbetweenmaxIFT(15mAforFODM3051,10mAforFODM3052,5mAforFODM3053)andabsolutemaxIF(60mA).ELECTRICALCHARACTERISTICS(TA=25°CUnlessotherwisespecified)INDIVIDUALCOMPONENTCHARACTERISTICSParameterTestConditionsSymbolDeviceMinTyp*MaxUnitEMITTERInputForwardVoltageIF=10mAVFAll1.201.5VReverseLeakageCurrentVR=3VIRAll0.01100µADETECTORPeakBlockingCurrentEitherDirectionVDRM=600V,IF=0(note1)IDRMAll3100nAPeakOn-StateVoltageEitherDirectionITM=100mApeakVTMAll2.02.5VCriticalRateofRiseofOff-StateVoltageIF=0(Figure8,note2)dV/dtAll1000V/µsTRANSFERCHARACTERISTICS(TA=25°CUnlessotherwisespecified)DCCharacteristicsTestConditionsSymbolDeviceMinTyp*MaxUnitLEDTriggerCurrentMainTerminalVoltage=3V(note3)IFTFODM305115mAFODM305210FODM30535HoldingCurrent,EitherDirec-tionIHAll300µAISOLATIONCHARACTERISTICS(TA=25°CUnlessotherwisespecified)CharacteristicTestConditionsSymbolDeviceMinTyp*MaxUnitSteadyStateIsolationVoltaget=1MinuteVISOAll3750V(RMS)11/10/03Page3of8©2003FairchildSemiconductorCorporation4-PINFULLPITCHMINI-FLATPACKAGERANDOMPHASETRIACDRIVEROUTPUTOPTOCOUPLERSFODM3051FODM3052FODM3053Fig.1LEDForwardVoltagevs.ForwardCurrentFig.2LeakageCurrentvs.AmbientTemperatureFig.3HoldingCurrentvs.AmbientTemperatureFig.4TriggerCurrentvs.AmbientTemperatureFig.5LEDCurrentRequiredtoTriggervs.LEDPulseWidthFig.6Off-stateOutputTerminalVoltagevs.AmbientTemperatureIF-FORWARDCURRENT(mA)110100VF-FORWARDVOLTAGE(V)0.91.01.11.21.31.41.51.61.7TA=-40°CTA=25°CTA=85°CPWIN-LEDTRIGGERPULSEWIDTH(µs)110100IFT-LEDTRIGGERCURRENT(NORMALIZED)024681012TA-AMBIENTTEMPERATURE(°C)-40-20IFT-TRIGGERCURRENT(NORMALIZED)0.70.80.91.01.11.21.31.4VTM=3VNORMALIZEDTOTAA=25°CNORMALIZEDTOT=25°CTA-AMBIENTTEMPERATURE(°C)-40-20100IH-HOLDINGCURRENT(NORMALIZED)0.11.0250.20.5TA-AMBIENTTEMPERATURE(°C)VDRM-OFF-STATEOUTPUTTERMINALVOLTAGE(NORMALIZED)0.60.70.80.91.01.11.21.31.4TA-AMBIENTTEMPERATURE(°C)-40-20020406080100020406080100-40-20020406080100IDRM-LEAKAGECURRENT(nA)0.11101001000TAIN100µsNORMALIZEDTOPWNORMALIZEDTOTA=25°CVDRM=600VAT=25°CTYPICALPERFORMANCECURVES4-PINFULLPITCHMINI-FLATPACKAGERANDOMPHASETRIACDRIVEROUTPUTOPTOCOUPLERSFODM3051FODM3052FODM305311/10/03Page4of8©2003FairchildSemiconductorCorporationFigure8.Staticdv/dtTestCircuitVdc400VR=10kΩCTESTX100SCOPEPROBEPULSEINPUTMERCURYWETTEDRELAY252V0VOLTSAPPLIEDVOLTAGEWAVEFORMVmax=dv/dt=0.63Vmax=252RTESTD.U.T.D.U.T.τRCτRCτRC400VFig.7On-StateCharacteristicsVTM-ON-STATEVOLTAGE(V)TA=25°CITM-ON-STATECURRENT(mA)-800-6-4-20246-600-400-20002004006008001.ThemercurywettedrelayprovidesahighspeedrepeatedpulsetotheD.U.T.2.100xscopeprobesareused,toallowhighspeedsandvoltages.3.Theworst-caseconditionforstaticdv/dtisestablishedbytriggeringtheD.U.T.withanormalLEDinputcurrent,thenremovingthecurrent.ThevariableRTESTallowsthedv/dttobegraduallyincreaseduntiltheD.U.T.continuestotriggerinresponsetotheappliedvol