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AOSConfidentialAOSConfidentialWaferFabProcessDeviceDesignJuly21,2006AOSConfidentialSemiconductorProcessingBasicsSemiconductorProcessingBasics•Photolithography•Dryetching•ImplantanddiffusionAOSConfidentialPowerMOSFETProcessFlowPowerMOSFETProcessFlow--11•Epitaxiallayergrowthonstartingsubstrate•TrenchEtchingandrounding•Gateoxidation.Polysilicondepositionandetchback•BodyImplantanddiffusion•SourceImplantanddiffusion•Dielectricdepositionandanneal.Contactpatterningandetchingsourceandgatecontacts•Metaldepositionandpatterning.Sintercontacts•Passivationdepositionandpatterning.•BackLAPtothinwafer.Backmetaldeposition.AOSConfidentialTrenchMOSFETprocessTrenchMOSFETprocessTrenchEtching(RIE)SmoothverticalsidewallsandwellroundedbottomsarekeyfordevicereliabilityAOSConfidentialTrenchMOSFETprocessTrenchMOSFETprocessGateoxidation.PolysilicondepositionandetchbackAOSConfidentialTrenchMOSFETprocessTrenchMOSFETprocessBodyImplantandDriveSourceImplantandDriveChannelFormationProcessAOSConfidentialTrenchMOSFETprocessTrenchMOSFETprocessOxideDepositionContactEtchAOSConfidentialTrenchMOSFETprocessTrenchMOSFETprocessThickMetalDepositionDryMetalEtchMetalMetalAOSConfidentialTrenchMOSFETprocessTrenchMOSFETprocessPassivationDepositionandetchBackLapandBackMetalMositure,IonresistanceMechanicalscratchresistancereducesubstrateresistanceAOSConfidentialWaferProbeandAcceptanceWaferProbeandAcceptanceAlltheprocess-criticalstepsliketrenchwidth,depth,contactsizeetcaremonitoredintheFAB.Oncethemetalison,theprocesscontrolmonitorisprobed.Specialteststructuresprovidedatatomonitorkeyprocessparameterslikethesource,bodyregions,contactresistancesetc.Thewaferissampleprobed(200-400sites/wafer)andpurchasedbasedonpassingestablishedyieldcriteria.