WF2M16W-150I5中文资料

1WhiteElectronicDesignsCorporation•[phone]•*2Mx16FlashMODULE,SMD5962-97610FEATURES
AccessTimesof90,120,150ns
Packaging:•56lead,HermeticCeramic,0.520CSOP(Package207).Fitsstandard56SSOPfootprint.•44pinCeramicSOJ(Package102)**•44leadCeramicFlatpack(Package208)**
SectorArchitecture•32equalsizesectorsof64KByteseach•Anycombinationofsectorscanbeerased.Alsosupportsfullchiperase.
Minimum100,000Write/EraseCyclesMinimum
Organizedas2Mx16;UserConfigurableas2x2Mx8
Commercial,Industrial,andMilitaryTemperatureRanges
5VoltReadandWrite.5V±10%Supply.
LowPowerCMOS
Data#PollingandToggleBitfeaturefordetectionofprogramorerasecyclecompletion.
Supportsreadingorprogrammingdatatoasectornotbeingerased.
Built-inDecouplingCapsandMultipleGroundPinsforLowNoiseOperation.
RESET#pinresetsinternalstatemachinetothereadmode.
Ready/Busy(RY#/BY#)outputfordetectionofprogramorerasecyclecompletion.
MultipleGroundPinsforLowNoiseOperation*Thisproductisunderdevelopment,isnotqualifiedorcharacterizedandissubjecttochangewithoutnotice.**Packagetobedeveloped.Note:ForprogramminginformationrefertoFlashProgramming16M5ApplicationNotes.FIGURE1–PINCONFIGURATIONSPINDESCRIPTIONI/O0-15DataInputs/OutputsA0-20AddressInputsWE#WriteEnableCS1-2#ChipSelectOE#OutputEnableVCCPowerSupplyVSSGroundRY/BY#Ready/BusyRESET#ResetBLOCKDIAGRAMNOTE:1.RY/BY#isanopendrainoutputandshouldbepulleduptoVccwithanexternalresistor.2.AddresscompatiblewithIntel2M856SSOP.TOPVIEWWF2M16-XDAX556CSOP1234567891011121314151617181920212223242526272856555453525150494847464544434241403938373635343332313029CS1#A12A13A14A15NCCS2#NCA20A19A18A17A16VCCGNDI/O6I/O14I/O7I/O15RY/BY#OE#WE#NCI/O13I/O5I/O12I/O4VCCNC#RESETA11A10A9A1A2A3A4A5A6A7GNDA8VCCI/O9I/O1I/O8I/O0A0NCNCNCI/O2I/O10I/O3I/O11GND2Mx82Mx8A0-20OE#WE#CS1#CS2#I/O0-7I/O8-1RESET#RY/BY#TOPVIEW1234567891011121314151617181920212223242526272856555453525150494847464544434241403938373635343332313029CS1#A12A13A14A15NCCS2#NCA20A19A18A17A16VCCGNDI/O6I/O14I/O7I/O15RY/BY#OE#WE#NCI/O13I/O5I/O12I/O4VCCNC#RESETA11A10A9A1A2A3A4A5A6A7GNDA8VCCI/O9I/O1I/O8I/O0A0NCNCNCI/O2I/O10I/O3I/O11GNDWF2M16-XXX544CSOJ(DL)**44FLATPACK(FL)****Packagetobedeveloped.2WhiteElectronicDesignsCorporation•[phone]•°CShortCircuitOutputCurrentIOS100mADataRetention(MilTemp)20yearsEndurance—write/erasecycles(MilTemp)100,000min.cyclesRECOMMENDEDDCOPERATINGCONDITIONSParameterSymbolMinTypMaxUnitSupplyVoltageVCC4.55.05.5VGroundVSS000VInputHighVoltageVIH2.0–VCC+0.5VInputLowVoltageVIL-0.5–+0.8VOperatingTemperature(Mil.)TA-55–+125°C°COperatingTemperature(Ind.)TA-40–+85°CDCCHARACTERISTICS-CMOSCOMPATIBLEVCC=5.0V,VSS=0V,-55°C≤TA≤+125°CParameterSymbolConditionsMinMaxUnitInputLeakageCurrentILIVCC=5.5,VIN=GNDtoVCC10µAOutputLeakageCurrentILOVCC=5.5,VIN=GNDtoVCC10µAVCCActiveCurrentforRead(1)ICC1CS#=VIL,OE#=VIH,f=5MHz80mAVCCActiveCurrentforProgramorErase(2)ICC2CS#=VIL,OE#=VIH120mAVCCStandbyCurrentICC3VCC=5.5,CS#=VIH,f=5MHz,RESET#=VCC±0.3V4.0mAOutputLowVoltageVOLIOL=12.0mA,VCC=4.50.45VOutputHighVoltageVOHIOH=-2.5mA,VCC=4.50.85xVCCVLowVCCLock-OutVoltageVLKO3.24.2VCAPACITANCE(TA=+25°C)ParameterSymbolConditionsMaxUnitOE#capacitanceCOEVIN=0V,f=1.0MHz25pFWE#capacitanceCWEVIN=0V,f=1.0MHz25pFCS#capacitanceCCSVIN=0V,f=1.0MHz15pFDataI/OcapacitanceCI/OVI/O=0V,f=1.0MHz15pFAddressinputcapacitanceCADVIN=0V,f=1.0MHz25pFThisparameterisguaranteedbydesignbutnottested.NOTES:1.TheIcccurrentlistedincludesboththeDCoperatingcurrentandthefrequencydependentcomponent(@5MHz).Thefrequencycomponenttypicallyislessthan2mA/MHz,withOE#atVIH.2.ICCactivewhileEmbeddedAlgorithm(programorerase)isinprogress.3.DCtestconditionsVIL=0.3V,VIH=VCC-0.3V3WhiteElectronicDesignsCorporation•[phone]•–Write/Erase/ProgramOperations-WE#ControlledVCC=5.0V,VSS=0V,-55°C≤TA≤+125°CParameterSymbol-90-120-150UnitMinMaxMinMaxMinMaxWriteCycleTimetAVAVtWC90120150nsChipSelectSetupTimetELWLtCS000nsWriteEnablePulseWidthtWLWHtWP455050nsAddressSetupTimetAVWLtAS000nsDataSetupTimetDVWHtDS455050nsDataHoldTimetWHDXtDH000nsAddressHoldTimetWLAXtAH455050nsWriteEnablePulseWidthHightWHWLtWPH202020nsDurationofByteProgrammingOperation(1)tWHWH1300300300µsSectorErase(2)tWHWH2151515secReadRecoveryTimebeforeWritetGHWL000µsVCCSetupTimetVCS505050µsChipProgrammingTime444444secChipEraseTime(3)256256256secOutputEnableHoldTime(4)tOEH101010nsRESET#PulseWidthtRP500500500nsNOTES:1.TypicalvaluefortWHWH1is7µs.2.TypicalvaluefortWHWH2is1sec.3.TypicalvalueforChipEraseTimeis32sec.4.ForToggleandDataPolling.ACCHARACTERISTICS–READ-ONLYOPERATIONSVCC=5.0V,VSS=0V,-55°C≤TA≤+125°CParameterSymbol-90-120-150UnitMinMaxMinMaxMinMaxReadCycleTimeTAVAVTRC90120150nsAddressAccessTimeTAVQVTACC90120150nsChipSelectAccessTimeTELQVTCE90120150nsOutputEnabletoOutp