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AlGaN/GaNHEMT裴风丽1,2,冯震2,陈炳若1(1武汉大学物理科学与技术学院,武汉430072;2中国电子科技集团公司第十三研究所,石家庄050051):从欧姆接触形成的机理出发,介绍了在AlGaN/GaNHEMT中实现源和漏区欧姆接触的各种方法,如表面处理技术金属化系统和重掺杂技术等回顾了近年来这些方法的研究进展:欧姆接触;铝镓氮/氮化镓;高电子迁移率晶体管:TN3253:A:1003353X(2007)01000606InvestigationontheOhmicContactsinAlGaN/GaNHEMTsPEIFengli1,2,FENGZhen2,CHENBingruo1(1CollegeofPhysicsScienceandTechnology,WuhanUniversity,Wuhan430072,China;2The13thResearchInstitute,CETC,Shijiazhuang050051,China)Abstract:Basedonthemechanismofohmiccontacts,variouskindsofmethodsforrealizingohmiccontactsinAlGaN/GaNHEMTswereintroduced,suchassurfacetreatment,metallizationscheme,heavilydopedtechnologyandsoon.Theresentprogressanddevelopmentofthesemethodswerereviewed.Keywords:ohmiccontacts;AlGaN/GaN;HEMTs:(0502060C06);(A1120060954);(51327030201,51327030402)1引言AlGaN/GaN,(GaN:34eV,AlN:62eV),(1~31010Vcm-1),(221010cms-1),AlGaN/GaN,,,2DEG(1013cm-2),AlGaN/GaNHEMT2003JoshinK[1]WCDMA174W2004WuYF[2]GaNHEMT,4GHz322W/mm,PAE54.8%;8GHz306W/mm,PAE496%2005MoonJ[3]Ka30GHzAlGaN/GaNHEMT57W/mm,PAE45%AlGaN/GaNHEMT,,,AlGaN/GaNHEMT!!!AlGaN/GaNHEMT2欧姆接触的机理n,[4],1:(1);(2)6半导体技术第32卷第1期2007年1月;(3);(4),,,1nAlGaN/GaNHEMT,:;3表面处理技术GaNAlGaN,,,,GaNAlGaN,,,,GaAs,SelvanathanD[5]SiCl4nGaNnAl02Ga08N,BOE,HCl,XPSAESBOEO/N,BOESiCl4nGaNnAl02Ga08N,SelvanathanD[5]SiCl4GaNAlGaN,NnButtariD[6]Cl2AlGaN,700nm045mm027mmJeonCM[7]AlGaN/GaNHFET,N2ICP,N2AlGaNNZhangAP[8]N2ICPAlGaN/GaNHEMT,(41016cm2s-1)(125eV)AlGaN,4金属化系统AlGaNGaN241,,,,,∀#[4,9],GaNAlGaN,2,,GaNAlGaNNTi,Ta,ZrCo,Ti,,,,,N,,N,Al,,,January2007SemiconductorTechnologyVol32No17,,,,Pt,Pa,Ni,Cr,Mo,TaW[10],Mo,:Pt,PaNi,GaNAlGaN,M/S,;,850∃,AuMo;TaW,,;CrMo,Mo,,,,Au421999,QiaoD[11]AlGaN/GaNTi/Al,AlGaN,GaN,Al/Ti:;AlTi,2001QiaoD[12]AlGaN/GaNTa,Ta:(1)510-7cm2;(2);(3),LimSH[13]Ta/Ti/AlTi/Ta/AlnAlGaN/GaN,AlGaN,(TaNTiN),2005,KimKH[14]Ta/Ti/Al/Ni/AuAlGaN/GaNHEMT,AlGaN,TaN/TiN,TaTi/Al/Ni/AuTi/Al800∃,2002,SchweitzKO[15]nAl03Ga07N/GaNV/Al/Pt/Au650∃,45s2004,Nishizono[16]/AlZnOAlGaN/GaNHEMT,ZnO/Ti/Al/Ni/Au,HClNH4OH,27mm,HCl300∃20mmNiAl,IngerlyDB[17]NiAlnGaNnAlGaN,nGaN850∃,5min9410-6cm2,600∃,100h5310-5cm2;nAl018Ga082N900∃,5min4710-5cm2,600∃,100h4341,Mo2005,GillespieJ[18],6AlGaN/GaNHEMT,,1mm,,Ti/Al/(Ni,Mo,Ir)/Au,MoSunY[19]AlGaN/GaNTi/Al/Mo/Au,1%51%6Ti/Al,800∃600/&,04~05mmWangL[20]TEMTi/Al/Mo/AuAlGaN/GaN,AlGaN,AlGaN,AlGaN2DEG,TEMTiN,,,TiN2DEGMohammedFM[21]TEMTi/Al/Mo/Au,Ti/Si/Al/Mo/AuTi/Si/Al/Si/Mo/Au,,8半导体技术第32卷第1期2007年1月,,2006,ChaturvediN[22]AlGaN/GaNHEMT,,Ti/Al/(Mo,Ni,PtTi)/Au,830∃,15s,03~05mm,Mo,XRDEDS,3Ti/Al/Mo/Au,AlMoGaMo33Ti/Al/Mo/AuTi,Pd,PtNiAlGaN/GaNHEMTBardwellJA[23]AlGaN/GaNTi/Al/Ti/Au,Al,,ChenJ[24]TEMnAlGaN/GaNTi/Al/Ti/Au,Au2TiTiAl10nmTi,750∃,AlGaNAuTiAlGaFayMW[25]AlGaN/GaNTi/Al/Ti/Au,750∃850∃AlGaN,AlGaNTiN,950∃,TiN,Al/Au,Nebauer[26]XTEMTFXRDAlGaN/GaNHFETTi/Al/Ti/Au/WSiN,850∃Al2AuAlAuTiAl2AuAl3Au8TiAl,AlGaN(Ti,Al)NFayMW[27]Ti/Al/Pd/AuTi,AlGaN/GaNTi,950∃,Ti,Al/Au,Ti,,BrightAN[28]TEMAu/Ni/Al/Ti/AlGaN/GaN,AlGaN,Al,TiAuDesmarisV[29]AlGaN/GaNSi/Ti/Al/Ni/Au,Si,023mm10610-6cm2LuoB[30]Ti/Al/Pt/WSi/Ti/AuTi/Al/Pt/W/Ti/AuAlGaN/GaNHEMT,WWSix,AlGaN/GaNHEMT,Cu,Ir,NbYounCJ[31]Si/Ti/Al/Cu/AunAlGaN/GaN3810-5cm2,SiAlTiSiNFitchRC[32]AlGaN/GaNHEMTTi/Al/Ni/AuTi/Al/Ir/Au,IrTiNNakayamaT[33]Al03Ga07N/GaNTi/Al/Nb/Au,5重掺杂技术和其他技术Si,January2007SemiconductorTechnologyVol32No19,[34]GaN,GaN[35]GaN1500∃,15109Pa[36],1999,QiaoD[11]SiAlGaN/GaNHEMT,AlN,2003,YuH[37]1500∃,GaN,GaN(14/&)(002mm)2005,YuH[38]SiAlGaN/GaNHEMT,HEMT(04mm),HEMT,HeikmanS[39]AlGaN/GaNHEMTGaN,AlAlGaN/GaNLiuQZ[40]AlGaN/GaNTi/Al,6结语AlGaN/GaNHEMT,,[20],::(a)Nn;(b),AlGaNGaN,,AlGaN:(a),;(b)AlGaN/GaNHEMT,,,2DEG,:[1]JOSHINK,KIKKAWAT,HAYASHIH,etal.A174WhighefficiencyGaNHEMTpoweramplifierforWCDMAbasestationapplications[C]∋IEEEInternationalElectronDeviceMeeting.Washington,DC,2003:12611263.[2]WUYF,SAXLERA,MOOREM,etal.30W/mmGaNHEMTsbyfieldplateoptimization[J].IEEEElectronDeviceLett,2004,25(3):117119.[3]MOONJ,WUS,WANGD,etal.GaterecessedAlGaNGaNHEMTsforhighperformancemillimeterwaveapplications[J].IEEEElectronDeviceLett,2005,26(6):348350.[4],.[M].:,1989.[5]SELVANATHAND,MOHAMMEDFM,BAEJO,etal.InvestigationofsurfacetreatmentschemesonntypeGaNandAl02Ga08N[J].JVST,2005,B23(6):25382544.[6]BUTTARID,CHINIA,MENEGHESSOG,etal.SystematiccharacterizationofCl2reactiveionetchingforimprovedohmicsinAlGaN/GaNHEMTs[J].IEEEElectronDeviceLett,2002,23(2):7678.[7]JEONCM,JANGHW,CHOIKJ,etal.FabricationofAlGaN/GaNheterostructurefieldeffecttransistorusingroomtemperatureohmiccontact[J].SolidStateElectronics,2002,46(5):695698.[8]ZHANGAP,DANGGT,RENF,etal.EffectofN2dischargetreatentonAlGaN/GaNhighelectronmobilitytransistorohmiccontactsusinginductivelycoupledplasma[J].JVacSciTech,2000,A18(4):11491152.[9]MOHAMMADSN.ContactmechanismsanddesignprinciplesforalloyedohmiccontactstonGaN[J].JApplPhys,2004,95(12):79407953.[10]ZHOUL.DevelopmentandcharacterizationofohmicandSchottkycontactsforGaNandAlGaNdevices[D].German:UniversityofIllinoisatUrbanaChampaign,2002.[11]QIAOD,GUANZF,CARLTONJ,etal.LowresistanceohmiccontactsonAlGaN/GaNstructuresusingimplantationandthe∀advancing#Al/Timetallization[J].ApplPhysLett,1999,74(18):26522654.[12]