AKT-PECVD-process-introduction-041415

R139G141B142R224G225B221R69G153B195R254G203B0R255G121B1R205G32B44R163G219B232R122G184B0R77G79B83R6G30B60AppliedMaterialsConfidentialAKTPECVDintroductionWayneChou/ChrisHung/JerryLinAKTPSE2015/4/14~4/15AppliedMaterialsConfidentialR139G141B142R224G225B221R69G153B195R254G203B0R255G121B1R205G32B44R163G219B232R122G184B0R77G79B83R6G30B602OutlineDay1Part1►AKTPECVDoverview►55KSchamberintroductionPart2►Tier2introduction►Tier2basiccheckitemsPart3►RFgeneratorsetting►Arcdetection►FrequencycontrolAppliedMaterialsConfidentialR139G141B142R224G225B221R69G153B195R254G203B0R255G121B1R205G32B44R163G219B232R122G184B0R77G79B83R6G30B603OutlineDay2Part4►Processrecipeparameter/contentintroduction►Clean-Seasonrecipeparameter/content►IdleservicefunctionPart5►Stressmeasurement►FTIRmeasurementPart6►E3andTechEdgeserviceintroductionR139G141B142R224G225B221R69G153B195R254G203B0R255G121B1R205G32B44R163G219B232R122G184B0R77G79B83R6G30B60Part1AKTPECVDoverviewAppliedMaterialsConfidentialR139G141B142R224G225B221R69G153B195R254G203B0R255G121B1R205G32B44R163G219B232R122G184B0R77G79B83R6G30B605Whatis“Plasma”??1.部分離子化之氣體。2.包含了電子，離子，原子團，不帶電分子，自由基。3.電漿態呈現電中性。等離子體。AppliedMaterialsConfidentialR139G141B142R224G225B221R69G153B195R254G203B0R255G121B1R205G32B44R163G219B232R122G184B0R77G79B83R6G30B606WhatisPECVD?“PECVD”PlasmaEnhancedChemicalVaporDepositionMainAdvantage:Lowerdepositiontemperature&flexibledepositedfilms.AppliedMaterialsConfidentialR139G141B142R224G225B221R69G153B195R254G203B0R255G121B1R205G32B44R163G219B232R122G184B0R77G79B83R6G30B60DiffusionAbsorptionChemicalreactionDesorptionWithoutusingplasma,thedissociationofSi-Clbondoccursmainlyonthesurfacebythermallyactivatedprocess,whichrequireshightemperatures.ReactionChaininPECVDofSiliconAppliedMaterialsConfidentialR139G141B142R224G225B221R69G153B195R254G203B0R255G121B1R205G32B44R163G219B232R122G184B0R77G79B83R6G30B60AKTPECVDprocesschamberdesignconceptShowerhead(Diffuser)GlassSubstrateSiN,Si,SiO2NF3N2+F*F*+SiSiF4HeightadjustableSusceptorTopumpNF3GasinSlitvalveRPSC(RemotePlasmaSourceClean)RFPowerSupply(forDeposition)13.56MHzRFpower(Diffuser)Gasflow/Chemistry(Diffuser)PressureSpacing(Diffuser/Susceptor)Temperature(Susceptor)KeyprocessvariablesAppliedMaterialsConfidentialR139G141B142R224G225B221R69G153B195R254G203B0R255G121B1R205G32B44R163G219B232R122G184B0R77G79B83R6G30B609RFmatchingtheory:PrincipalsTraditionalmatchesusefixedfrequency,13.56MHz,andvariablecapacitorsformatching.Bothload/tunereactancearefunctionoffrequency,andthatiswhywecanaffordtousefixedcapacitorsandvaryfrequencyinmatching.L-NetworktoMatchRLRORO=50loadtuneRFGZL=RL+jXLImpedance=resistance+reactance=(real)+(imaginary)阻抗=電阻+電抗CablelinechambersAppliedMaterialsConfidentialR139G141B142R224G225B221R69G153B195R254G203B0R255G121B1R205G32B44R163G219B232R122G184B0R77G79B83R6G30B6010RFmatchingtheory:PrincipalsTheory:V=IRP=IVP=I2RLI=Vs/(RL+Rt)2RLP=(Vs/RL+Rt)2RL(dP/dRL)=Vs2[(Rt+RL)2-2(Rt+RL)RL/(RL+Rt)4]=0powermax,ifslope=0(Rt+RL)2-2(Rt+RL)RL=0(Rt+RL)(Rt+RL-2RL)=0Thus,RL=RtiVsRtRLPowerimpedancepowermax,ifslope=0AppliedMaterialsConfidentialR139G141B142R224G225B221R69G153B195R254G203B0R255G121B1R205G32B44R163G219B232R122G184B0R77G79B83R6G30B6011RFmatchingtheory:PrincipalsReflectivepower=Function(Load,Tune,Frequency)Traditional►Matchingbox(Load&Tune):adjustable►RFgenerator(Frequency):fixedAdvanced►Matchingbox(Load&Tune):fixed►RFgenerator(Frequency):adjustableLoadPower=ForwardPower–ReflectivePowerForwardPowerismodifiedbyRFlookuptableAppliedMaterialsConfidentialR139G141B142R224G225B221R69G153B195R254G203B0R255G121B1R205G32B44R163G219B232R122G184B0R77G79B83R6G30B6012aSiTFTStructureandFilmsGlass(0.7or0.5mm)M1,metalg-SiNx,GI~3500ASingleordoublegateSiNx(GH/GL,G1/G2)a-Si,1100~1500ADoublelayer(AL/AHorA1/A2)n+a-Si,250~500ASinglelayer(NPorN)M2,metalSiNx,2500~3000ADoublelayer(P1/P2)ITO+++++++---------AppliedMaterialsConfidentialR139G141B142R224G225B221R69G153B195R254G203B0R255G121B1R205G32B44R163G219B232R122G184B0R77G79B83R6G30B6013aSiTFTStructureandFilmsThickness(A)ProcessTempatur(degC)PV2300~500PV12200~2500M2NP250~300AH/A2800~1200AL/A1300electricchannelGL/G2500GIGH/G13000275/285,340/360M1ForcontactholeActivelayer,Tri-layers,3-layerPass275/285340/360AppliedMaterialsConfidentialR139G141B142R224G225B221R69G153B195R254G203B0R255G121B1R205G32B44R163G219B232R122G184B0R77G79B83R6G30B6014ChemicalReactionofPECVDDielectricFilms►Nitride:SiH4+NH3+N2--SiNx:H(GL/GH,P1/P2)►Oxide:SiH4+N2O--SiOx:H►TEOS{Si(OC2H5)4}+O2--SiOx:H►Oxynitride:SiH4+NH3+N2O+N2--SiOxNy(Pass)SemiconductorFilms►a-Si:SiH4(+H2)--a-Si:H(AL/AH,A1/A2)►n+a-Si:SiH4+PH3+H2--a-Si(P):H(N)AppliedMaterialsConfidentialR139G141B142R224G225B221R69G153B195R254G203B0R255G121B1R205G32B44R163G219B232R122G184B0R77G79B83R6G30B60AKTPECVDsystemoverviewRFGENERATORPCACPOWERBOXTRIPLESLOTLL(TSSL)TRANSFERCH(WITHDUALARMVACUUMROBOT)PROCESSCH(x5)SERVICEPLATFORMSAppliedMaterialsConfidentialR139G141B142R224G225B221R69G153B195R254G203B0R255G121B1R205G32B44R163G219B232R122G184B0R77G79B83R6G30B6055KXCVD