光刻胶工序原理及其控制要点(Photolithography)

PhotolithographyUnderstandingmoreabouttheprocessPreparedBy:NesterContent•PhotolithographyIntroduction•PhotoResistProperty•Alignment&ExposureTechnologyPhotolithographyIntroductionPhotolithography(Background)PCB(印刷电路板)IC(可编程芯片)CPUPhotolithography(Background)CPUWaferICWaferPhotoProcessWhatisthepurposeofPhotolithography?Thepurposeofphotolithographyistotransferimagesfromamasktothesurfaceofaproductinordertolaydownspecificareaswhichformthedesignrequirementtomakethepattern.LaminationMechanism124351Description:1.DryResistFilm.2.HotRollerPressKeyParameters:1.RollerTemperature.2.RollerSpeed3.RollerPressureResistcoatingMechanismKeyParameters:1.RotationSpeed2.Consumption(N2press)3.DispensersolidificationSpin-coatExposurelightParticleonresistsurfaceParticleareaunderexposureDevelopmentParticleControlPhotoResistDryResistReactionMechanismWetResistReactionMechanismPAC:Photoactivecompound(感光剂)Polyester(酚醛树脂)Photoacidgenerator(溶解促进剂)AfterDevelopment(显影)Exposure(曝光)PhotoresistSolventsComponentsOfDNQResistPhotoactiveCompound(PAC)=DNQChemicallyreactionduringlithographyVerylowvolatilityResinandSpeedEnhancers(树脂)PrimarycomponentsaftersoftbakeVerylowvolatilitySolventDissolvesresinandPACVolatileAdditivesAdhesionpromotersPACModel(DNQ)羧基(-C00H)PACExposedChemicalreactionPhotoresistNonExposedExposedhvNovolackpolymerPolymer＋ＰＡＣPolymer＋PhotocompoundNonexposedFastSlowdissolutionrate[µm/min]ＲｍｉｎＲｍａｘAcceleratedDissolutionratio!！ChemicalreactionofDNQchemistryDissolutioncharacterchangeduringlithographystepEffectOfDeveloperTemperaturey=0.0004x2-0.026x+0.7R2=1y=-0.3x2+25.5x-205R2=11501701902102302502702903103303501520253035developertemperature[癈]dose-to-print[mJ/cm瞉0.260.270.280.290.30.310.320.330.340.350.36finalresolution[祄]dose-to-printresolutionfittoresolutionfittoDTPAZ®7800Photoresist(1.09µmthick)SB90°C,120sec;NA0.54(conv.illume.)PEB110°C,60sec;developmentAZ®300MIF,60secDryEtchBehaviorOfNovolakResistsSelectivityVs.FluorineEtchΔL2ΔL1AfteretchingCalculationMethodDryResistResolution:20um5umWetResistResistStatusAdhesion:30um5um1.Adhesion(WetDry)Relatetothesubstratesurface,Resisttype&Process2.Resolution:(CD)Dryresist:2~3umWetresist:0.5um3.PhototonusExposureenergySoftbakingcondition4.DimensionStepper(Aligner)performanceSoft-bakingvs.Focus(AZP462015um)Alignment&ExposureExposuremachineNoneOpticalProximityprintingProjectionprintingSteperprintingContactprintingOpticalElectronprintingX-rayprinting光学非光学接触式接近式投影式步进式Ｘ射线电子束光刻机类型ExposureMachineCategoryContactPrintingUVPointSourceMaskResistSubstrateOpticalSystemContactPrinting1.Advantage1)Highresolutionbylowdiffractioneffects2)Simple&lowprice.2.DisadvantageChipdefect(damageresist&mask)3.Resolution:X=K/NAUVWavelength:K0.6~0.8NA(Numberaperture):0.4~0.5ProximityPrinting1.AdvantageNochipdefect2.Disadvantagelowresolutionbyhighdiffractioneffects3.ImprovementmethodDecreaseexp.Wavelength(X-rayof1~2nm)UVPointSourceMaskResistSubstrateOpticalSystemProximityPrinting5~25um20015sxProjectionPrintingAdvantageNochipdefect&highresolution&shortcycletime221NAkDOFNAkresolutionCollimatingLens(聚光透镜)Mask(掩模)Projector(投影器)αUVPointSourceDOFRowbar(圆片)DepthofFocus(景深)Focus-Exposure(FE)MatrixAZ®7900i-lineresistFT0.748µmthickon1920ÅBARLi,SB90°C/90sec,ExposureCanon3000i4,NA0.63/0.65,PEB110°C/60sec,Dev65secsinglepuddle300MIFPositivedefocus:failurebyscummingNegativedefocus:failurebyfilmlossXrayPrinting1.Advantage1)Highresolutionbymuchlowerdiffractioneffects(Wavelength~10Å)2.Disadvantage1)Xray–noparallellight2)Highprice(MC/Mask)3)LowproductivityElectronPrinting1.Advantage1)Highresolutionbymuchlowerdiffractioneffects(Wavelength~0.1nm)2)Highprecise2.Disadvantage1)Dependonsubstrate2)Highprice3)HighrequirementforresistAlignmentMechanism(Stepper)~End~Thanks!