DS90CR286MTDX中文资料

DS90CR285/DS90CR286+3.3VRisingEdgeDataStrobeLVDS28-BitChannelLink-66MHzGeneralDescriptionTheDS90CR285transmitterconverts28bitsofLVCMOS/LVTTLdataintofourLVDS(LowVoltageDifferentialSignal-ing)datastreams.Aphase-lockedtransmitclockistransmit-tedinparallelwiththedatastreamsoverafifthLVDSlink.Everycycleofthetransmitclock28bitsofinputdataaresampledandtransmitted.TheDS90CR286receivercon-vertstheLVDSdatastreamsbackinto28bitsofLVCMOS/LVTTLdata.Atatransmitclockfrequencyof66MHz,28bitsofTTLdataaretransmittedatarateof462MbpsperLVDSdatachannel.Usinga66MHzclock,thedatathroughputis1.848Gbit/s(231Mbytes/s).Themultiplexingofthedatalinesprovidesasubstantialcablereduction.Longdistanceparallelsingle-endedbusestypicallyrequireagroundwireperactivesignal(andhaveverylimitednoiserejectioncapability).Thus,fora28-bitwidedataandoneclock,upto58conductorsarerequired.WiththeChannelLinkchipsetasfewas11conductors(4datapairs,1clockpairandaminimumofoneground)areneeded.Thisprovidesa80%reductioninrequiredcablewidth,whichprovidesasystemcostsavings,reducescon-nectorphysicalsizeandcost,andreducesshieldingrequire-mentsduetothecables’smallerformfactor.The28LVCMOS/LVTTLinputscansupportavarietyofsignalcombinations.Forexample,seven4-bitnibblesorthree9-bit(byte+parity)and1control.FeaturesnSingle+3.3VsupplynChipset(Tx+Rx)powerconsumption250mW(typ)nPower-downmode(0.5mWtotal)nUpto231Megabytes/secbandwidthnUpto1.848GbpsdatathroughputnNarrowbusreducescablesizen290mVswingLVDSdevicesforlowEMIn+1Vcommonmoderange(around+1.2V)nPLLrequiresnoexternalcomponentsnBothdevicesareofferedinaLowprofile56-leadTSSOPpackagenRisingedgedatastrobenCompatiblewithTIA/EIA-644LVDSstandardnESDRating7kVnOperatingTemperature:−40˚Cto+85˚CBlockDiagramsDS90CR285DS90CR28601291001OrderNumberDS90CR285MTDSeeNSPackageNumberMTD5601291027OrderNumberDS90CR286MTDSeeNSPackageNumberMTD56TRI-STATE®isaregisteredtrademarkofNationalSemiconductorCorporation.July2004DS90CR285/DS90CR286+3.3VRisingEdgeDataStrobeLVDS28-BitChannelLink-66MHz©2004NationalSemiconductorCorporationDS012910(Note1)IfMilitary/Aerospacespecifieddevicesarerequired,pleasecontacttheNationalSemiconductorSalesOffice/Distributorsforavailabilityandspecifications.SupplyVoltage(VCC)−0.3Vto+4VCMOS/TTLInputVoltage−0.3Vto(VCC+0.3V)CMOS/TTLOutputVoltage−0.3Vto(VCC+0.3V)LVDSReceiverInputVoltage−0.3Vto(VCC+0.3V)LVDSDriverOutputVoltage−0.3Vto(VCC+0.3V)LVDSOutputShortCircuitDurationContinuousJunctionTemperature+150˚CStorageTemperature−65˚Cto+150˚CLeadTemperature(Soldering,4sec.)+260˚CSolderReflowTemperatureMaximumPackagePowerDissipation@+25˚CDS90CR285MTD1.63WDS90CR286MTD1.61WPackageDerating:DS90CR285MTD12.5mW/˚Cabove+25˚CDS90CR286MTD12.4mW/˚Cabove+25˚CESDRating(HBM,1.5kΩ,100pF)7kVRecommendedOperatingConditionsMinNomMaxUnitsSupplyVoltage(VCC)3.03.33.6VOperatingFreeAirTemperature(TA)−40+25+85˚CReceiverInputRange02.4VSupplyNoiseVoltage(VCC)100mVPPElectricalCharacteristicsOverrecommendedoperatingsupplyandtemperaturerangesunlessotherwisespecifiedSymbolParameterConditionsMinTypMaxUnitsLVCMOS/LVTTLDCSPECIFICATIONSVIHHighLevelInputVoltage2.0VCCVVILLowLevelInputVoltageGND0.8VVOHHighLevelOutputVoltageIOH=−0.4mA2.73.3VVOLLowLevelOutputVoltageIOL=2mA0.060.3VVCLInputClampVoltageICL=−18mA−0.79−1.5VIINInputCurrentVIN=VCC,GND,2.5Vor0.4V±5.1±10µAIOSOutputShortCircuitCurrentVOUT=0V−60−120mALVDSDRIVERDCSPECIFICATIONSVODDifferentialOutputVoltageRL=100Ω250290450mV∆VODChangeinVODbetweenComplimentaryOutputStates35mVVOSOffsetVoltage(Note4)1.1251.251.375V∆VOSChangeinVOSbetweenComplimentaryOutputStates35mVIOSOutputShortCircuitCurrentVOUT=0V,RL=100Ω−3.5−5mAIOZOutputTRI-STATE®CurrentPWRDWN=0V,±1±10µAVOUT=0VorVCCLVDSRECEIVERDCSPECIFICATIONSVTHDifferentialInputHighThresholdVCM=+1.2V+100mVVTLDifferentialInputLowThreshold−100mVIINInputCurrentVIN=+2.4V,VCC=3.6V±10µAVIN=0V,VCC=3.6V±10µADS90CR285/DS90CR286(Continued)OverrecommendedoperatingsupplyandtemperaturerangesunlessotherwisespecifiedSymbolParameterConditionsMinTypMaxUnitsTRANSMITTERSUPPLYCURRENTICCTWTransmitterSupplyCurrentWorstCase(withLoads)RL=100Ω,CL=5pF,WorstCasePattern(Figures1,2),TA=−10˚Cto+70˚Cf=32.5MHz3145mAf=37.5MHz3250mAf=66MHz3755mARL=100Ω,CL=5pF,WorstCasePattern(Figures1,2),TA=−40˚Cto+85˚Cf=40MHz3851mAf=66MHz4255mAICCTZTransmitterSupplyCurrentPowerDownPWRDWN=LowDriverOutputsinTRI-STATEunderPowerdownMode1055µARECEIVERSUPPLYCURRENTICCRWReceiverSupplyCurrentWorstCaseCL=8pF,WorstCasePattern(Figures1,3),TA=−10˚Cto+70˚Cf=32.5MHz4965mAf=37.5MHz5370mAf=66MHz78105mACL=8pF,WorstCasePattern(Figures1,3),TA=−40˚Cto+85˚Cf=40MHz5582mAf=66MHz78105mAICCRZReceiverSupplyCurrentPowerDownPWRDWN=LowReceiverOutputsStayLowduringPowerdownMode1055µANote1:“AbsoluteMaximumRatings”arethosevaluesbeyondwhichthesafetyofthedevicecannotbeguaranteed.Theyarenotmeanttoimplythatthedeviceshouldbeoperatedattheselimits.Thetablesof“ElectricalCharacteristic