MEMS-工艺-封装

MEMS封装outline引线连接方式--wirebonding(MCM)--flipchipDiesawDiesawDiesawWirebond双芯片双列贴片单层压焊引线金属外壳气密封装FlipChipBondingWithSolderBumpsSolderbumpingisdonebyelectroplatingforwholewafers.Thewafersarethendiced,andtheindividualchipsareflipchipbondedtogether.Typicalbumpdiameter:20...30umTypicalbumppitch:50...200umBump/pixelcountperROC:~2,000...65,000Sensorchip,typicallyhi-res(111)silicon.Readoutchips,0.25-umCMOS,typically1to10ROC’spersensorchip.Areaarraytypeinterconnectingtechnologyisidealforhybridizingpixelsensorswithreadoutchips.FlipChipHybridization1(3)ReadoutICwaferSensorwaferSensor&ReadoutwafersReadoutICwaferSensorwaferBumpingprocess(atwaferlevel)SolderablepadsSolderbumpsFlipChipHybridization2(3)FlipChipHybridization2(3)Flipchipbonding(chip-by-chip)Hybridizedsensor/readout(detector)assemblySensor&readoutchipsFlipChipHybridization3(3)FlipChipHybridization3(3)SensorchipReadoutchipReadoutchipSensorchipBumpingProcessIncomingInspectionZeissAxiotron2MicroscopeDirtparticleoncustomer'sreadoutwafer•Visualincominginspectionofwafersisdonebeforebumpingprocess.•Afterinspection,wafersarecleanedusingliquidsolventsandultrasound.SputteringofFieldMetals•SputteredTi-W/Cu(40nm/700nm)layerisusedasfieldmetalforelectroplating.•LightinsitusputteretchingstepisusedtoremovenativeoxidefromAlcontactpads.•VonArdenneCS730Sisusedfor4,5,and6wafers.•TELEclipseMk.IVisusedfor8wafers.VonArdenneCS730SSputtererTELEclipseMk.IVSputtererPhotolithography•Patterned18-μmthickphotoresistisusedtodefinethebumpsitesonthewafers.•SussMicroTECACS200AutomatedCoatingSystemisusedtocoatwaferswithphotoresist.•SussMicroTECMA6MaskAlignerisusedtoexpose4,5,and6wafers.•SussMicroTECMA200MaskAlignerisusedtoexpose8wafers.SussMA200&MA6MaskAlignersSussACS200PRcoatingsystemElectroplating•Nickelisfirstelectroplatedintheholesinthephotoresist•Solderisthenelectroplatedontopofthenickel.•Essentiallythesameprocessisusedforboththesensorandthereadoutside;onlythevolumeofthesolderisdifferent.WetbenchforelectroplatingWaferholderforelectroplatingStrippingofPhotoresist•Afterelectroplating,photoresistisstrippedawayusingsolventsandultrasoundonautomatedwetbench.EtchingofFieldMetals•Thefieldmetals,whichshort-circuitedthebumpsitestooneanotherduringelectroplating,areremovedbywetetching.SolderReflowATVSRO-704ReflowOvenBumpsafterreflow•ATVSRO-704ReflowOvenisusedforsolderbumpreflow.•Formicacidambientreducesoxidesonbumpsurfaces.WaferThinningStrasbaugh7AFBackGrinderStrasbaugh6DS-SPCMP•Strasbaugh7AFIntelligentGrinderisusedforbackgrinding.•Strasbaugh6DS-SPCMPPlanarizerisusedforCMPpolishing.•Alayerofprotectivetapeisusedtoprotectthebumpsandthefrontsideofthewafer.200mmSiwaferbackground&polishedtothicknessof150μmDicingDiscoDFD651DicingSawDFD651inaction•DiscoDFD651DicingSawisusedfordicing.Wafersarelaminatedontape/tapeframesfordicingFlipChipBondingSussFC150FlipChipBondersClose-upofbondedchips•Flipchip[tack]bondingisperformedontwoSussMicroTECFC150FlipChipBonders.•Apost-tackbonding'assemblyreflow'forself-alignmentisdoneintheATVSRO-704ReflowOveninaformicacidambient.SussFC150inuseoutline引线连接方式--wirebonding(MCM)--flipchip