ITO表面处理对OLED性能的影响

:2001-11-16.ITOOLED,,,,(,430074):,OLEDOLEDITOITO,ITO,ITO;ITO:ITO;;OLED:TN38311:A:1001-5868(2002)03-0205-05InfluenceofITOSurfaceTreatmentonOLEDPerformanceLIUChen,XUChong2yang,ZHONGZhi2you,YINSheng,WANGChang2an(Dept.ofElectronicScienceandTechnol.,HuazhongUniversityofScienceandTechnol.,Wuhan430074,CHN)Abstract:Accordingtotheexperiments,theinfluenceofITOsurfacetreatmentonOLEDperformanceisanalyzed.SurfacetreatmentofITO,anodeofOLEDwillchangeitssurfacechemicalcompositionandsurfacemorphologywhichwilldirectlyinfluenceitssurfaceworkfunction,andinturnaffectitsabilityofholeinjection.Meanwhile,thosechangeswillindirectlyinfluencethegrowingprocessoftheorganicfilmsandtheorganicmolecularconfiguration,aswellasthecohesionofITOfilmsurfaceandtheorganicfilms.Keywords:ITO;surfacetreatment;OLED1ITO(),ITOInSn5s,2p,SnITOSnn,EFEc,(1102011021cm3)(21044104f)[1],ITO(Eg=3.54.3eV),ITO,ITO(OLED)ITO,ITO,,ITO,ITO,ITO,OLEDITO,OLED,OLED,ITO,ITO,ITO,OLEDOLED,:()()5022002233:ITOOLEDITOOLED2ITO2.1ITOITO(),ITO,OLED,ITOOLEDITO,ITOOLED,ITOOLED,,,OLED,ITO,ITO(),,,OLED,ITO,,ITO(),,OLED,OLEDITOOLED,ITO,,[2];,OLEDITOOLED,,Jia-mingLiu[3](HClHNO3)ITO,ITO,OLEDITOOLED,()T1Osada[1]H2O2ITO,ITO(BCA),(BCA),OLEDVon(BAC),ITOF1Li[4]ITO,ITO,ITOITO,ITO,OLEDS1Fujta[5]ITOTPD,ITOITO:ITOOLED,OLED[6]ITOOLED,ITOOLED2.2ITOITO,,[7]SessileDropITO,ITOITO,()ITO,,ITOITO,[8],ITO,r,a1r2,ITOa2r2,a3r3,a1a2a3(1)1ITO602SEMICONDUCTOROPTOELECTRONICSVol.23No.3June,2002,G=a3r3gv+a1r20+a2r21-a2r22(1)gv(J/m3),0(J/m2),1ITO(J/m2),2ITO(J/m2),Gs=a1r20+a2r21-a2r22=2r2(1-cos)0+r2sin2(1-2)(2),0cos+1=2(2)Gs=2r2(1-cos)0+r2sin2cos0=4r2f()0(3)f()=(2-3cos+cos3)/4(4)Gv=a3r3gv=4/3(r3f()gv)(5)G=Gv+Gs=4r2f()0+4/3(r3f()gv)=4f()[1/3(r3gv)+r20](6),Gmax=16f()30/3g2v,gv0ITOGmax,ITO,,ITOITOf()[0,],=0,Gmax=0,ITO;=,Gmax=1630/3g2v,,,ITO,2.3OLEDITO,ITO,,,ITO,ITO,Wfs=Ef+Es-Efs(7)EfEsITO,EfsITOITOEs[7];,ITO,Efs;(7)ITO,,ITOITO(PANI,CuPc,MTDATA),ITO,ITO,,3OLEDITO,ITO,ITO3.1ITOITO,,,OLED,ITO,,,ITOITO,ITO,ITO,ITO,ITO,ITOSnInO,ITOSnO,SnITOSn4+,[9]ITO,ITOSn,,ITOC1C1Wu[10]Sn,,ITOQ1T1Le[11]ITO7022002233:ITOOLED,ITOSn,,ITO,T1Osada[1]H2O2Ne-ITO,Ne-Sn,ITO,SnITO,ITOITO,[9];H2O2Sn,,ITO,ITO()ITOK1Sugiyama[12]UV-Ne-ITOITO,:Sn,UV-Ne-ITOITOOLED,OLED,,ITO,,ITO,ITO/ITOITO,ITO,HOMO[5],ITO,ITO,ITO,ITOD1J1Milliron[13]X-rayUPSITO,,[10]ITO,F1Nuesch[14]ITO,ITO,,,,ITO;ITO,ITO,,ITO,,ITO,,ITO,,ITO,,,3.2ITOITOITOITO,ITO,ITO,,,,ITO,,,ITO,J1S1Kim[15]HallITO,,O2ITO[9,11],ITO,ITOITO,ITO,,,ITO,OLED,ITO,ITO,OLED,ITOOLED,ITO,,ITO,OLED4ITOOLED,ITO,802SEMICONDUCTOROPTOELECTRONICSVol.23No.3June,2002,:[1]OsadaT,KuglerTh,BromsP,etal.Polymer2basedlight2emittingdevices:investigationsontheroleoftheindium2tinoxide(ITO)electrode[J].Synth.Met.,1998,96:77-80.[2],,,.[J].,1999,48(12):2327-2333.[3]LiuJM,LuPY,WengWK.StudiesonmodificationsofITOsurfacesinOLEDdevicesbyTaguchimethods[J].MaterialScienceEngineeringB,2001,85:209-211.[4]LiF,TangH.Effectsofaquaregiatreatmentofindium2tin2oxidesubstratesonthebeahaviorofdoublelayeredorganiclight2emittingdiodes[J].Appl.Phys.Lett.,1997,70(20):2747-2749.[5]FujitaS,SakamotoT,UedaK,etal.Surfacetreatmentofindium2tin2oxidesubstrateanditseffectsoninitialnucleationprocessofdiaminefilms[J].Jpn.J.Appl.Phys.,1997,36:350-353.[6]SteuberS,StaudigelJ,StosselM,etal.Reducedoperatingvoltageoforganicelectroluminescentdevicesbyplasmatreatmentoftheindiumtinoxideanode[J].Appl.Phys.Lett.,1999,74(23):3558-3560.[7]KimJS,FriendRH,CacialliF.Surfaceenergyandpolarityoftreatedindium2tin2oxideanodesforpolymerlight2emittingdiodesstudiedbycontact2anglemeasurements[J].J.Appl.Phys.,1999,86(5):2774-2778.[8].[M].:,1992.172.[9]MasonMG,HungLS,TangCW,etal.Characterizationoftreatedindium2tin2oxidesurfacesusedinelectroluminescentdevices[J].J.Appl.Phys.,1999,86(3):1688-1692.[10]WuCC,WuCI,SturmJC,etal.Surfacemodificationofindiumtinoxidebyplasmatreatment:aneffectivemethodtoimprovetheefficiency,brightness,andreliabilityoforganiclightemittingdevices[J].Appl.Phys.Lett.,1997,70(11):1348-1350.[11]LeQT,NueschF,RothergLJ,etal.Photoemissionstudyoftheinterfacebetweenphenyldiamineandtreatedindium2tin2oxide[J].Appl.Phys.Lett.,1999,75(10):1357-1359.[12]SugiyamaK,IshiiH,OuchiY,etal.Dependenceofindium2tin2oxideworkfunctiononsurfacecleaningmethodasstudiedbyultravioletandX2rayphotoemissionspectroscopies[J].J.Appl.Phys.,2000,87(1):295-298.[13]MillironDJ,HillIG,ShenC,etal.Surfaceoxidationactivatesindiumtinoxideforholeinjection[J].J.Appl.Phys.,2000,87(1):572-576.[14]NueshF,EorsytheEW,LeQT,etal.Importanceofindiumtinoxidesurfaceacidobasicityforchangeinjectionintoorganicmaterialsbasedlightemittingdiodes[J].J.Appl.Phys.,2000,87(11):7973-7980.[15]KimJS,CacialliF,ColaA,etal.Increaseofchargecarriersdensityandreductionofhallmobilitiesinoxygen2plasmatreatedindium2tin2oxideandoes[J].Appl.Phys.Lett.,1999,75(1):19-21.:(1975-),,E2mail:[e-mail]-,,,,,DVD,40,:,,,DVD,()9022002233:ITOOLED