贴片三极管2T1

BLGalaxyElectricalProductionspecificationPNPSiliconEpitaxialPlanarTransistorS9012Documentnumber:BL/SSSTC081(IC=-500mA）PbLead-freezComplementaryToS9013.zExcellentHFELinearity.APPLICATIONSzHighCollectorCurrent.SOT-23ORDERINGINFORMATIONTypeNo.MarkingPackageCodeS90122T1SOT-23MAXIMUMRATING@Ta=25℃unlessotherwisespecifiedSymbolParameterValueUnitsVCBOCollector-BaseVoltage-40VVCEOCollector-EmitterVoltage-25VVEBOEmitter-BaseVoltage-5VICCollectorCurrent-Continuous-500mAPCCollectorDissipation300mWTj,TstgJunctionandStorageTemperature-55~150℃BLGalaxyElectricalProductionspecificationPNPSiliconEpitaxialPlanarTransistorS9012Documentnumber:BL/SSSTC081@Ta=25℃unlessotherwisespecifiedParameterSymbolTestconditionsMINTYPMAXUNITCollector-basebreakdownvoltageV(BR)CBOIC=-100μA,IE=0-40VCollector-emitterbreakdownvoltageV(BR)CEOIC=-1mA,IB=0B-25VEmitter-basebreakdownvoltageV(BR)EBOIE=-100μA,IC=0-5VCollectorcut-offcurrentICBOVCB=-40V,IE=0-0.1μACollectorcut-offcurrentICEOVCE=-20V,IB=0B-0.1μAEmittercut-offcurrentIEBOVEB=-5V,IC=0-0.1μADCcurrentgainhFEVCE=-1V,IC=-50mA120400Collector-emittersaturationvoltageVCE(sat)IC=-500mA,IB=-50mAB-0.6VBase-emittersaturationvoltageVBE(sat)IC=-500mA,IB=-50mAB-1.2VTransitionfrequencyfTVCE=-6V,IC=-20mAf=30MHz150MHzCollectoroutputcapacitanceCobVCB=-10V,IE=0,f=1MHz5pFCLASSIFICATIONOFhFE(1)RankLHJRange120-200200-350300-400MARKING2T1BLGalaxyElectricalProductionspecificationPNPSiliconEpitaxialPlanarTransistorS9012Documentnumber:BL/SSSTC081@Ta=25℃unlessotherwisespecifiedBLGalaxyElectricalProductionspecificationPNPSiliconEpitaxialPlanarTransistorS9012Documentnumber:BL/SSSTC081