mps-dc-dc模块讲解解析

DCDCIntroductionDCDC拓扑原理EMI处理Layout（另外文档）损耗分析（另外文档）DCDCTopologiesNon-SyncBUCKSyncBUCKNon-SyncBOOSTSyncBOOSTMOS管内有体二极管BackgroundReverseProtection-DC-DCCircuitWorkReverseProtectionVinVinDC-DCCircuitWorkVinReverseProtectionVinDC-DCCircuitNoWorkConnectingthepowersupplyreverselywilldamageICs.Sosomecustomerwanttousereverseprotectioncircuitespeciallyforbatterypoweredsystem注意带电池系统MPSSyncBUCKMPSNon-SyncandSyncBOOSTDCDC拓扑原理EMI处理Layout（另外文档）损耗分析（另外文档）IC规格书讲解EMCDesign/Schematic首先是Layout然后再考虑增加器件Background-EMIImprovementR5isalwaysusedtoadjusttheswitchingspeedofHighsideFET,sothattheSWspikecanbereducedBut….ImpactofBSTResistorChangeBSTResistance=100OhmBSTResistance=1kOhmPayAttentiontotheBSTResistance!!WesuggestBSTR50Ohmnormally30M-1G/HorizontalDirection1PKMAXH30MHz1GHz2AVMAXHRBW120kHzMT100msPREAMPONAtt0dBAUTOPRN100MHz1GHz051015202530354045505560EN25-PKCommentB:Manuf:MPSM/N:MP4462Memo:FULLLOADPower:DC12VHorizontalDate:5.AUG.200910:56:1030M-1G/VerticalDirection1PKMAXH30MHz1GHz2AVMAXHRBW120kHzMT20msPREAMPONAtt0dBAUTOPRN100MHz1GHz051015202530354045505560EN25-PKCommentB:Manuf:MPSM/N:MP4462Memo:FULLLOADPower:DC12VVerticalDate:5.AUG.200910:58:53EMCDesignA:CommonChokeNCB:Resistor47OhmC:SnubberNCD:CommonChokeNCTestresults30M-1G/HorizontalDirection30MHz1GHzdBµV/mdBµV/m1PKMAXH2AVMAXHTDFRBW120kHzMT1sPREAMPONAtt10dBAUTOPRN100MHz1GHz010203040506070801Marker1[T1]40.86dBµV/m882.000000000MHzEN25-PKCommentB:M/N:MP4462EV-1Memo:FullLoadPower:12VHDate:20.AUG.200914:19:5230M-1G/VerticalDirection1PKMAXH2AVMAXHTDFdBµV/mdBµV/m30MHz1GHzMT10msRBW120kHzPREAMPONAtt10dBAUTOPRN100MHz1GHz01020304050607080EN25-PKCommentB:M/N:MP4462EV-1Memo:FullLoadPower:12VVDate:20.AUG.200914:13:15DCDC拓扑原理EMI处理Layout（另外文档）损耗分析（另外文档）IC规格书讲解