JESD22-C101-C

JEDECSTANDARDField-InducedCharged-DeviceModelTestMethodforElectrostatic-Discharge-WithstandThresholdsofMicroelectronicComponentsJESD22-C101C(RevisionofJESD22-C101B.01)DECEMBER2004JEDECSOLIDSTATETECHNOLOGYASSOCIATIONNOTICEJEDECstandardsandpublicationscontainmaterialthathasbeenprepared,reviewed,andapprovedthroughtheJEDECBoardofDirectorslevelandsubsequentlyreviewedandapprovedbytheJEDEClegalcounsel.JEDECstandardsandpublicationsaredesignedtoservethepublicinterestthrougheliminatingmisunderstandingsbetweenmanufacturersandpurchasers,facilitatinginterchangeabilityandimprovementofproducts,andassistingthepurchaserinselectingandobtainingwithminimumdelaytheproperproductforusebythoseotherthanJEDECmembers,whetherthestandardistobeusedeitherdomesticallyorinternationally.JEDECstandardsandpublicationsareadoptedwithoutregardtowhetherornottheiradoptionmayinvolvepatentsorarticles,materials,orprocesses.BysuchactionJEDECdoesnotassumeanyliabilitytoanypatentowner,nordoesitassumeanyobligationwhatevertopartiesadoptingtheJEDECstandardsorpublications.TheinformationincludedinJEDECstandardsandpublicationsrepresentsasoundapproachtoproductspecificationandapplication,principallyfromthesolidstatedevicemanufacturerviewpoint.WithintheJEDECorganizationthereareprocedureswherebyaJEDECstandardorpublicationmaybefurtherprocessedandultimatelybecomeanANSI/EIAstandard.Noclaimstobeinconformancewiththisstandardmaybemadeunlessallrequirementsstatedinthestandardaremet.Inquiries,comments,andsuggestionsrelativetothecontentofthisJEDECstandardorpublicationshouldbeaddressedtoJEDECattheaddressbelow,orcall(703)907-7559or©JEDECSolidStateTechnologyAssociation20042500WilsonBoulevardArlington,VA22201-3834Thisdocumentmaybedownloadedfreeofcharge;howeverJEDECretainsthecopyrightonthismaterial.Bydownloadingthisfiletheindividualagreesnottochargefororreselltheresultingmaterial.PRICE:PleaserefertothecurrentCatalogofJEDECEngineeringStandardsandPublicationsonlineat!DON’TVIOLATETHELAW!ThisdocumentiscopyrightedbyJEDECandmaynotbereproducedwithoutpermission.Organizationsmayobtainpermissiontoreproducealimitednumberofcopiesthroughenteringintoalicenseagreement.Forinformation,contact:JEDECSolidStateTechnologyAssociation2500WilsonBoulevardArlington,Virginia22201-3834orcall(703)907-7559JEDECStandardNo.22-C101C-i-TestMethodC101C(RevisionofTestMethodC101B.01)TESTMETHODC101CFIELD-INDUCEDCHARGED-DEVICEMODELTESTMETHODFORELECTROSTATIC-DISCHARGE-WITHSTANDTHRESHOLDSOFMICROELECTRONICCOMPONENTSIntroductionThisstandarddescribesauniformmethodforestablishingchargeddevicemodel(CDM)electrostaticdischarge(ESD)“withstand”thresholds.JEDECStandardNo.22-C101CTestMethodC101C-ii-(RevisionofTestMethodC101B.01)JEDECStandardNo.22-C101CPage1TestMethodC101C(RevisionofTestMethodC101B.01)TESTMETHODC101CFIELD-INDUCEDCHARGED-DEVICEMODELTESTMETHODFORELECTROSTATIC-DISCHARGE-WITHSTANDTHRESHOLDSOFMICROELECTRONICCOMPONENTS(FromJEDECBoardBallotJCB-04-102,formulatedunderthecognizanceoftheJC-14.1CommitteeonReliabilityTestMethodsforPackagedDevices.)1ScopeAllpackagedsemiconductorcomponents,thinfilmcircuits,surfaceacousticwave(SAW)components,opto-electroniccomponents,hybridintegratedcircuits(HICs),andmulti-chipmodules(MCMs)containinganyofthesecomponentsaretobeevaluatedaccordingtothisstandard.Thetestmethodsdescribedinthisstandardmayalsobeusedtoevaluatecomponentsthatareshippedaswafersorbarechips.Toperformthetests,thecomponentsmustbeassembledintoapackagesimilartothatexpectedinthefinalapplication.Thepackageusedshallberecorded.2ReferencedocumentJESD625,RequirementsforHandlingElectrostaticDischarge-Sensitive(ESDS)Devices.3TermsanddefinitionsChargeddevicemodel(CDM):AspecifiedcircuitcharacterizinganESDeventthatoccurswhenadeviceacquireschargethroughsometriboelectric(frictional)orelectrostaticinductionprocessesandthenabruptlytouchesagroundedobjectorsurface.Electrostaticdischarge(ESD):Asuddentransferofelectrostaticchargebetweenbodiesorsurfacesatdifferentelectrostaticpotentials.NOTETheterms“discharge”,“pulse”,“ESDevent”and“CDMstresses”areequivalentforthepurposesofthisdocument.Field-inducedcharging:Achargingmethodusingelectrostaticinduction.JEDECStandardNo.22-C101CPage2TestMethodC101C(RevisionofTestMethodC101B.01)4CircuitschematicfortheCDMsimulator4.1Thewaveformsproducedbythesimulatorshallmeetthespecificationsof5.1through8.4.2AschematicfortheCDMtestcircuitisshowninFigure1.(Otherequivalentcircuitsareallowedifthegeneratedwaveformmeetstherequirementsof5.1through8.)Adetachabledischargehead(seeFigure1),consistingofthepogoprobe,radialresistor,topgroundplane,semi-rigidcoaxialcable,andthesupportarm,isusedtoinitiatethedischarge.Thetopgroundplaneshallbeasquareconductiveplatewithedgelengthof63.5mm±6.35mm(2.5in±0.25in).Thedischargepathincludesa1ohmresistivecurrentprobeofatleast3GHzbandwidthforwaveformmonitoring.Thecablefromthe1ohmresistortotheoscilloscopeshouldalsohaveabandwidthofatleast3GHz.ThethicknessoftheFR-4dielectricshallbe0.381mm±0.038mm(0.015i