MRF8P9040N

MRF8P9040NR1MRF8P9040GNR1MRF8P9040NBR11RFDeviceDataFreescaleSemiconductorRFPowerFieldEffectTransistorsN--ChannelEnhancement--ModeLateralMOSFETsDesignedforCDMA,W--CDMAandLTEbasestationapplicationswithfrequenciesfrom700to1000MHz.CanbeusedinClassABandClassCforalltypicalcellularbasestationmodulationformats.DriverApplication—900MHz•TypicalSingle--CarrierW--CDMAPerformance:VDD=28Volts,IDQ=320mA,Pout=4.0WattsAvg.,IQMagnitudeClipping,ChannelBandwidth=3.84MHz,InputSignalPAR=7.5dB@0.01%ProbabilityonCCDF.FrequencyGps(dB)ηD(%)ACPR(dBc)920MHz18.918.9--49.6940MHz19.119.5--50.1960MHz19.119.9--48.8•CapableofHandling10:1VSWR,@32Vdc,940MHz,63WattsCWOutputPower(3dBInputOverdrivefromRatedPout),DesignedforEnhancedRuggedness•TypicalPout@1dBCompressionPoint≃42WattsCWDriverApplication—700MHz•TypicalSingle--CarrierW--CDMAPerformance:VDD=28Volts,IDQ=320mA,Pout=4.0WattsAvg.,IQMagnitudeClipping,ChannelBandwidth=3.84MHz,InputSignalPAR=7.5dB@0.01%ProbabilityonCCDF.FrequencyGps(dB)ηD(%)ACPR(dBc)728MHz19.918.7--49.9748MHz20.119.1--50.0768MHz20.019.5--49.9Features•CharacterizedwithSeriesEquivalentLarge--SignalImpedanceParametersandCommonSourceS--Parameters•InternallyMatchedforEaseofUse•IntegratedESDProtection•GreaterNegativeGate--SourceVoltageRangeforImprovedClassCOperation•DesignedforDigitalPredistortionErrorCorrectionSystems•OptimizedforDohertyApplications•225°CCapablePlasticPackage•RoHSCompliant•InTapeandReel.R1Suffix=500Units,44mmTapeWidth,13inchReel.DocumentNumber:MRF8P9040NRev.1,10/2010FreescaleSemiconductorTechnicalData728--960MHz,4.0WAVG.,28VCDMA,W--CDMA,LTELATERALN--CHANNELRFPOWERMOSFETsMRF8P9040NR1MRF8P9040GNR1MRF8P9040NBR1(TopView)RFoutA/VDSAFigure1.PinConnectionsRFoutB/VDSBRFinA/VGSARFinB/VGSBNote:Exposedbacksideofthepackageisthesourceterminalforthetransistors.CASE1484--04,STYLE1TO--272WB--4PLASTICMRF8P9040NBR1CASE1486--03,STYLE1TO--270WB--4PLASTICMRF8P9040NR13241CASE1487--05,STYLE1TO--270WB--4GULLPLASTICMRF8P9040GNR1©FreescaleSemiconductor,Inc.,2010.Allrightsreserved.2RFDeviceDataFreescaleSemiconductorMRF8P9040NR1MRF8P9040GNR1MRF8P9040NBR1Table1.MaximumRatingsRatingSymbolValueUnitDrain--SourceVoltageVDSS--0.5,+70VdcGate--SourceVoltageVGS--6.0,+10VdcOperatingVoltageVDD32,+0VdcStorageTemperatureRangeTstg--65to+150°CCaseOperatingTemperatureTC150°COperatingJunctionTemperature(1,2)TJ225°CTable2.ThermalCharacteristicsCharacteristicSymbolValue(2,3)UnitThermalResistance,JunctiontoCase(4)CaseTemperature77°C,4.0WCW,28Vdc,IDQ=320mA,960MHzCaseTemperature81°C,40WCW,28Vdc,IDQ=320mA,960MHzRθJC1.51.3°C/WTable3.ESDProtectionCharacteristicsTestMethodologyClassHumanBodyModel(perJESD22--A114)1B(Minimum)MachineModel(perEIA/JESD22--A115)A(Minimum)ChargeDeviceModel(perJESD22--C101)III(Minimum)Table4.MoistureSensitivityLevelTestMethodologyRatingPackagePeakTemperatureUnitPerJESD22--A113,IPC/JEDECJ--STD--0203260°CTable5.ElectricalCharacteristics(TA=25°Cunlessotherwisenoted)CharacteristicSymbolMinTypMaxUnitOffCharacteristics(4)ZeroGateVoltageDrainLeakageCurrent(VDS=70Vdc,VGS=0Vdc)IDSS——10μAdcZeroGateVoltageDrainLeakageCurrent(VDS=28Vdc,VGS=0Vdc)IDSS——1μAdcGate--SourceLeakageCurrent(VGS=5Vdc,VDS=0Vdc)IGSS——1μAdcOnCharacteristics(4)GateThresholdVoltage(VDS=10Vdc,ID=170μAdc)VGS(th)1.52.33.0VdcGateQuiescentVoltage(VDD=28Vdc,ID=320mAdc,MeasuredinFunctionalTest)VGS(Q)2.33.13.8VdcDrain--SourceOn--Voltage(VGS=10Vdc,ID=0.55Adc)VDS(on)0.10.170.3Vdc1.ContinuoususeatmaximumtemperaturewillaffectMTTF.2.MTTFcalculatoravailableat://(SeeFigure3,PossibleCircuitTopologies)(continued)MRF8P9040NR1MRF8P9040GNR1MRF8P9040NBR13RFDeviceDataFreescaleSemiconductorTable5.ElectricalCharacteristics(TA=25°Cunlessotherwisenoted)(continued)CharacteristicSymbolMinTypMaxUnitFunctionalTests(1,2,3)(InFreescaleTestFixture,50ohmsystem)VDD=28Vdc,IDQ=320mA,Pout=4.0WAvg.,f=960MHz,Single--CarrierW--CDMA,IQMagnitudeClipping,InputSignalPAR=7.5dB@0.01%ProbabilityonCCDF.ACPRmeasuredin3.84MHzChannelBandwidth@±5MHzOffset.PowerGainGps17.519.120.5dBDrainEfficiencyηD18.019.9—%AdjacentChannelPowerRatioACPR—--48.8--46.0dBcInputReturnLossIRL—--13--9dBTypicalBroadbandPerformance(1)(InFreescaleTestFixture,50ohmsystem)VDD=28Vdc,IDQ=320mA,Pout=4.0WAvg.,Single--CarrierW--CDMA,IQMagnitudeClipping,InputSignalPAR=7.5dB@0.01%ProbabilityonCCDF.ACPRmeasuredin3.84MHzChannelBandwidth@±5MHzOffset.FrequencyGps(dB)ηD(%)ACPR(dBc)IRL(dB)920MHz18.918.9--49.6--12940MHz19.119.5--50.1--13960MHz19.119.9--48.8--13TypicalPerformances(1)(InFreescaleTestFixture,50ohmsystem)VDD=28Vdc,IDQ=320mA,920--960MHzBandwidthCharacteristicSymbolMinTypMaxUnitPout@1dBCompressionPoint,CWP1dB—42—WIMDSymmetry@45WPEP,PoutwhereIMDThirdOrderIntermodulation30dBc(DeltaIMDThirdOrderIntermodulationbetweenUpperandLowerSidebands2dB)IMDsym—22—MHzVBWResonancePoi