半导体外延层晶格失配度的计算

:2005-09-20:(1966-),,;*:(1961-),,,,[e-mail]:1006-0464(2006)01-0063-05何菊生,张萌*,肖祁陵(南昌大学材料科学与工程学院,江西南昌330047):,,XRD,,,,:;;;:O4841;TN3042:A(),,,,,,,,GaN16%[1],14%[2],15%[3],,,1as,ae,,11=as-aeae[4]22=as-aeas[5]33=2|as-ae|as+ae[6]1,2,3,,,,,GaN,16%,13.8%,15%12,,,,,,||5%,||=5%~25%,||25%[7]221()()1/4,C5/8C,,,(111)(0001)(0002),,,(100),,1,a,30120062南昌大学学报(理科版)JournalofNanchangUniversity(NaturalScience)Vo.l30No.1Feb.200612,3a,3a,23a,a2a/22a,32322,()(),()(111),,,,,,::(0001)hex(0001)hex(),(100)fcc(100)fcc();:(0001)hex(111)fcc();:,,!25%,,∀1120#∀1120#,∀100#∀100#,∀1120#∀110#,30∃()45∃(),∀1120#∀1100#,∀100#∀110#,,%,;,,,GaN,a,3a,2a,3.185,5.517,6.370;,2a/2,a,2a,3.21,4.54,6.421:(),GaN,,[12],(111)Si(111)GaAsGaN1GaN(:10-10m)/12GaN/Al2O3(0001)GaN(0001)Al2O35.517/4.758∀1100#GaN∀1120#Al2O316%[1]14%[2]GaN/ZnO(0001)GaN(0001)ZnO3.185/3.252∀112#GaN∀112#ZnO2.1%[8]2.1%GaN/6HSiC(0001)GaN(0001)SiC3.185/3.080∀1120#GaN∀1120#ZnO3.4%[9]3.3%GaN/Si(0001)GaN(111)Si3.185/3.839∀1120#GaN∀110#Si17%[10]21%GaN/Si(100)GaN(100)Si4.54/5.43∀100#GaN∀100#Si17%20%GaN/GaAs(100)GaN(100)GaAs4.54/5.653∀100#GaN∀100#GaAs20%[11]25%&64&()2006,(001)Si(001)GaAsGaN,c-GaN,,,1212-11=112(2-1)(|2|-|1|)2-1|2|-|1|115%,12;110%,1%;115%,3%,5%,1423,,,,[13]GaAs(100)GaN,[14]-FeSi2,[15][16]Si(100)ZnO,ZnO/Si(100)-FeSi2/Si2.3.1ZnO,ZnO/Si(100)ZnO,(0001)ZnO(100)SiZnO3.252∀1120#,5.632(3.2523)∀1010#,Si5.430∀100#(ZnO)5.632,30∃,∀1010#ZnO∀100#Si,1=5.430-5.6325.632=-3.6%,∀1210#ZnO∀010#Si,ZnO3,5.632(3.2523),9.756(5.6323):9.756/10.860,∋1=10.860-9.7569.756=11%ZnOSi(111),(0001)∀1010#ZnO(111)∀110#Si,18%,ZnOSi(100)Si(111)2.3.2-FeSi2,a=0.9879nm,b=0.7799nm,c=0.7939nm,Si-FeSi2XRDSi(111)-FeSi2(220)(202)[14],(220)-FeSi2(111)Si,(202)-FeSi2(111)Si(220)-FeSi2(111)Si,(220)-FeSi2()0.7839nm,0.98792+0.77992=1.259(nm),Si0.5432=0.7678(nm),0.76783(nm),1.330nm,0.7839/0.7678,1.259/1.330,(220)∀001#-FeSi2(111)∀110#Si,1a=0.54302-0.78390.7839=-2.1%,(220)∀110#-FeSi2(111)∀112#Si,∋1a=0.54306-0.98792+0.779920.98792+0.77992=5.7%!,(202)∀010#-FeSi2Si(111)∀101#Si,1b=-1.6%,,(202)∀101#-FeSi2Si(111)∀112#Si,1b=5.5%,-FeSi2Si(111),,GaNLiAlO2,a=5.170,c=6.260;LiGaO2,a=5.402,b=6.&65&1:372,c=5.007,10-10m,1.7321.155(2/3/),-FeSi21.274,LiAlO2LiGaO21.2111.180,:1.7321.155;!2.3.3RR(0112),2GaN/1GaN/LiAlO2//(0001)∀1120#GaN(100)∀001#LiAlO2(0001)∀1100#GaN(100)∀010#LiAlO26.37/6.265.516/5.171.7%6.8%GaN/LiGaO2//(0001)∀1120#GaN(001)∀010#LiGaO2(0001)∀1100#GaN(001)∀100#LiGaO26.370/6.3725.516/5.4020.03%2.1%,,C(0001)GaN[17]GaN(0001),(0001)GaN(0112)Al2O3,R∀2110#,4.785,GaN3.1853,∀1010#,,∀1010#GaN∀2110#Al2O3,1=13.3%,∀1210#GaN∀0111#Al2O3,(3.185(5)/15.384,∋1=3.4%,C3312!,X2!(),2!a1a2,d1d2,2d1sin!1=∀,2d2sin!2=∀,,=a1-a2a2=d1-d2d2=sin!2-sin!1sin!1,!1!2,!1-!2=#!,=sin!2-sin!1sin!1)-#!&ctg!1,53C-SiCSi,3C-SiCSi,3C-SiC5(200)Si(400)2!=41.5∃2!=69.2∃,2d12sin!1=∀,2d24sin!2=∀,d1d23C-SiC(100)Si(100)=a1-a2a2=d1-d2d2)20%25%,,322!∃,,XRD[19],GaN(a)(0001)GaN(0001)Al2O3,30∃,∀1010#GaN∀2110#Al2O3,,1=3.1853-4.7853.1853=13.7%(b)(1012)GaN,7.571(10-10m,3.185(10-10m(1012)GaN(0001)Al2O3,∀1210#GaN∀0110#Al2O3,&66&()2006(3.185(3)/(4.7853),1=3.185(3-4.78533.185(3=13.3%;∀1011#GaN∀2110#Al2O3,((1012)GaN)/(4.785(2),,∋1=(3.1853)2+5.1852-4.785(2(3.1853)2+5.1852=-26.4%,,()6GaN/Al2O3(0001),,,,,4,,,,,ZnO/Al2O3,∀1120#ZnO∀1010#Al2O3,∀1120#ZnO∀1120#Al2O330∃[20];,cGaN/GaAs,45∃,20%13%,25%11%,,,,,,,,10%,1%,0.1%,GaNZnO:[1]LeeYK,HanSW,LeeSS,eta.lTheGrowthof-LiGaO2FilmsUsingNovelSinglePrecursors.JournalofCrystalGrowth,2001(226):481-487.[2]LeeJJ,ParkYS,YangCS,eta.lMBEGrowthofWurtziteGaNonLaAlO3(100)Substrate.JournalofCrystalGrowth,2000(213):33-39.[3],,,.GaN[J].,2002,23(10):1093.[4],.[M].:,2003.,262,122,341.[5].[M].:,1995:2,566.[6],..[J],2001,30(3):171.[7],,.[M].:.2004:415.[8],,,.ZnO/Si[J].,2005,19(2):109.[9]LuJ,HaworthL,WestwoodDI,eta.lInitialStagesofMolecular-beamEpitaxyGrowthofGaNon6H-SiC(0001).ApplPhysLett,2001,78(8):1080.[10]Seong-Hwanjiang,Seung-JaeLee,Iu-SeokSeo,eta.lCharacteristicsofGaN/Si(111)EpitaxyGrownUsingAl0.1Ga0.9N/AlNCompositeNucleationLayersHavingDifferentThicknessesofAlN.JournalofCrystalGrowth241(2002):289-296.[11],,,.GaN/GaAs.[J],1999,120(1):58.[12],,..:,2002:588.[13],,.GaAs(100)GaN[J].,2001,3,22(3):315.(下转第102页)&67&1:[10],.DPS[M].:,2002:626-627.ApplicationGreySystemTheorytoForecastingandAnalysisonAffectecFactorsofAtmosphericNO2Concentration∗∗∗TakeChangchenDistrictFoshanCityasExampleXUSong,CHENGTongqing(DepartmentofResourceandEnvironment,FoshanUniversity,Foshan528000,China)Abstract:Usingthegraysystemtheorymethod,itisidentifiedbycorrelationanlysisthatthesuperiorfactorsaffectingtheatmosphericNO2concentrationofCheanchendistrictareformthedensityofmotorvehicleandtheamountofmotorvehicle.AndwiththeGrayModelGM(1,1),theatmosphericNO2concentrationinfuturefiveyearsaredescending.thepapermakescientificreferenceforplanningtheatmosphericenvironmentandharnessingpollution.Keywords:graycorrelationanlysis;graymodelGM(1,1);Foshancity;urbanregionalenvironmentnoise(上接第67页):[14],,,.FeSi2[J].,2002,32(10):907.[15],,,.GaNZnO/Si[J].,2000,30(2):127-131.[16],,,.ZnOPL[J].,2001,22(8):1016.[17],.SiC[J].,1998,16(