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英文中文Abort中断、停止Accept接受Action行动ADI(afterdevelopinspection)显影后检测AE(Assistengineer)助理工程師AEI(afteretchinspection)刻蚀后检测Alarm报警Aligner接触式光刻机Alignment对准Anneal回火Area区域Arm手臂Automatic自動Backside背面Backgrinding背面研磨Broken破片CAR(CorrectiveActionRequirement)纠正措施要求C/T(cycletime)生产周期Cancel取消CD(criticaldimension)光刻后线宽Chamber反应腔Check检查CheckList检查表ChildLot子批Chip晶粒ChipYield晶粒良率Cleaningroom净化间Coater涂胶机Close关闭、结束Complete完成Confirm确认Control控制Count数量；计算CVD(ChemicalVaporDeposition)化学气相沉积Developer显影机DailyMonitor日常监测Defect缺陷Deposition表面沉积DIFF(Diffusion)扩散DryEtch干法刻蚀Edit編輯EE(EquipmentEngineer)设备工程师Emergent紧急、紧急事件EMO设备急停按钮End結束Engineer工程师Equipment设备、机台Empty空的Error错误Etch刻蚀Execute执行Exit退出、离开FAB(fabrication)制造区、生产区Finish完成Flow流程Focus聚焦、关注、焦点Furnace炉管Gas气体Handle处理History历史资料Hot-lot紧急批次Hold留置在当站制程（如品质问题时）Idle闲置Image影像Implant离子注入InSPEC在规格内Input输入KeyIn输入Layer层List表格Load装载、传送Lockout锁定Login登入Lot批LotID(Identity)批号Lotstatus产品在产状况Max最大值Mean平均值Measure测量Merge合并Metal金属Message信息Mode模式Mark标记MotherLot母批FA(failureanalysis)失效分析HEPA(HighEfficientParticulateAir)filter高效能粒子空气过滤网Contamination污染Temperature(TEMP)温度Humidity湿度Pressure压力UPW(Ultra-PureWater)超纯水DIW(De-IonizedWater)去离子水IPA(IsopropylAlcohol)异丙醇Cleanliness洁净度Batch批量Equipment设备（简称为EQP）Cassette装在制品的架子Priority优先级英文中文Min最小值M.O(MissOperation)作業疏失Monitorwafer侧测试用硅片Move移動Manufacturing制造Manual手动、手册Microwave微波Nitride氮化硅Notch(晶片之)校準缺口Note注释NTD(NewTechnologyDevelopemtn)新品研发O.I(operationinstruction)操作指示O.M(operationmanual)操作手冊Operation操作OPI(operatorinterface)操作界面OutofSPEC超出规格Output输出、产出Overtime超时Paperruncard纸版流程卡Particle颗粒、微尘Pattern硅片上的线条、图案Pause暂停PE(processengineer)工艺工程师Peeling脱落（多用于光刻胶）PHOTO光刻Password密码PIE(ProcessIntegrationEngineer)工艺整合工程师PM(preventivemaintenance)定期维护Poly多晶硅Probe硅片测试机Process工艺Processcode工艺代码Product产品Program程序Pump泵PVD(PhysicalVaporDeposition)物理气相沉积机Q-Time等待时间、滞留时间Quality品质Quit退出、离开Retry重试Rework返工Run运行Range范围Recipe程序Record记录Release放行；解放Reset重置、重启Resist光刻胶Restart重新开始Reject拒绝Save保存Safety安全Sample样本Scanner扫描式光刻机Setup设定SOP（StandardOperationProcedure）标准作业指导书Stage平台Status状态Step步骤Stepper步进式光刻机Stop停止Specification(Spec)规格Supply供给System系统Split分批Scratch划伤、刮伤Scrap报废Specialgas特殊气体、毒气Select选择Surface表面Target目标Tagout标定Temp(Temperature)溫度Test测试、实验Thickness厚度Troubleshooting故障排除、问题处理T/F(thinfilm)薄膜Type形式Unload传出Vendor供应商Wafer硅片WIP(Workinprogress)待产与在产WetEtching湿法腐蚀WetCleaning湿法清洗WT(wafertesting)硅片测试机Wrong错误Yield良率BasicOperation基本工艺Process制程方法Options具体分类Layering增层Oxidation氧化Atmospheric常压氧化法ChemicalVaporDeposition化学汽相淀积PhysicalVaporDeposition物理汽相淀积AtmosphericPressure常压化学汽相淀积LowPressure(LPCVD)低压化学汽相淀积PlasmaEnhanced(PECVD)等离子增强化学汽相淀积HighPressure高压氧化法RapidThermalOxidation快速热氧化VaporPhaseEpitaxy(VPE)汽相外延法MetaloranicCVD(MOCVD)金属有机物CVDMoleculurBeamEpitaxy(MBE)分子束外延VacuumEvaporation真空蒸发法Sputtering溅射法Patterning光刻Resist光刻胶Positive正胶工艺Negative负胶工艺ExposureSystems暴光系统Contact接触式暴光Proximity接近式暴光ScanningProjection投影式暴光Stepper步进暴光机ExposureSources暴光源HighPressureMercury高压汞X-raysX射线E-Beams电子束暴光ImagingProcesses成象工艺SingleLayerResist单层光刻胶MultilayerResist多层光刻胶AntireflectingLayers防反射层Off-AxisIllumination偏轴照明Planarization平坦化ContrastEnhancement对比度提高WetChemistry-Liqiud/vapor湿化学刻蚀Etch刻蚀Dry(Plasma)干法刻蚀Lift-Off剥脱IonMillling离子磨ReactionIonEtch(RIE)反应离子刻蚀法Doping掺杂半导体术语Diffusion扩散OpenTube-Horizontal/Vertical开放式炉管-水平/竖置ClosedTube封闭炉管RapidThermalProcess(RTP)快速热处理IonImplantationMedium/HighCurrent中/高电流离子注入Low/HighVoltage(energy)低能量/高能量离子注入Heating热处理Thermal加热HotPlates热盘Convection热对流RTP快速加热Radiation热辐射Infrared(IR)红外线加热