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31999-05-31,1999-07-02GaN3(250100)GaN.GaNp-nMSM.GaN,GaNUVPHOTODETECTORSZHANGDe2HengLIUYun2Yan(DeptmentofPhysics,ShandongUniversity,Jinan250100)AbstractThenewgenerationofGaNultravioletphotodetectorsisintroduced.Thepresparationandelectro-opticparametersofvariousphotodetectors,includingphotoconductive,photovoltaic,Schottkybarrierandmetal-semiconductor-metalstructurephotodetectorsarereviewed.KeywordsGaN,UVphotodetectorsGaN.GaN(LED);,,.GaN.,GaN.,GaNGaN.1997,1000h1000hGaN.,Ge,Si,GaAs,GaP.Si,Si.(UV),..,,.Si.,SiC..-,GaN.SiC,GaN.SiC,SiC.GaN,.,,(365nm)..,SiC,GaN,..,()().,p-npin.GaN.28©1995-2004TsinghuaTongfangOpticalDiscCo.,Ltd.Allrightsreserved.1,,,.,,:(1),(photoconductivitypersistent);(2).,.GaNKhan[1]1992(MOCVD).365nm,200nm,.5V,2000A/W.365nm6103,2kHz.5,.,Binet[2]MOCVDGaN.3kV/cm,4000A/W,..500nm,410-3A/W..He-Cd(325nm),4V,:,,,4500A/W();,,P-1/2..GaN,Stevens[3]SiMgpGaN.14V,30A/W.8V,,,,.10W/m2,.10W/m2,.,,0167ms.MgMg.GaN(persistentphotoconductivity,PPC),,..Binet[3]nGaN,,.,.,GaN,.,,.,,,.,.QiunpGaNPPC.nMOCVD..,,,.,..MgpGaN,.,,.JohnsonMOCVDMgpGaNPPC,.105s..2p-n.211p-n,p-n:,,.3829(2000)2©1995-2004TsinghuaTongfangOpticalDiscCo.,Ltd.Allrightsreserved.,p-n:,p-n.,,p-n.,p-n,.p-nGaNKhanMOCVD.0109A/W,10nA,013ms.,Zhang[4]p-n.p-nMOCVD.:AlN,011015mnGaN,pGaNMg.p-np31016cm-3,n1018cm-3.nGaN011m,330k.,,h3143eV.h3143eV.n.,p-n.ChenCVDp-n.nGaNpGaN,pn.1mnGaN,015mMgpGaN.1mpGaN,015mnGaN.0109A/W,Si.16mm2014ms.,.Khan[5]GaN/AlGaN.1.300.AlGaN25nm,41018cm3.GaN,.i-GaNn-GaN.i-GaN,,.1V,3000A/W.365nm,,.1GaN/AlGaN,.N,pn,pin.,.,pin,.,GaNpinp,.VanHoveMBEpin.360nm,0111A/W,48%.,34.812s.pinGaN,Osinskyp--n.pn.(365nm),011A/W,-15V,0114A/W.RC,1714ns-6V1013ns.200200m2,-3V,217pA,10-25A2/Hz,1/f,(NEP)61610-15W/Hz1/2.212p-n,,,.pGaNKhan[6],2.MOCVD2mMg48©1995-2004TsinghuaTongfangOpticalDiscCo.,Ltd.Allrightsreserved.pGaN,Mg71017cm3.2.Cr/Au,Ti/Au..0113A/W,1s.200365nm,,365nm,.2pGaN3n-/n+GaNChenKhan,3n-/n+GaN.40nmAlN,1mn+GaN(n=31018cm-3),014mn-GaN(n=3101611717cm-3).4mm4mm.5nmPd.n+15nmTi200nmAl.Pd200365nm(70%).-5V(18A/W),65%.RC,.50,118ns.,1/f,NEP710-12W/Hz1/2.,OsinskySi(111)GaN.(MBE).pSi(111)012mAlN,017mnGaN.Ti/Al/Ti/AuPd.0V0105A/W,-4V011A/W,365nm.-2V,60nA.NEP31710-9W/Hz1/2.213MSMMSM(--),.Carrano[7]GaNMSM.4.:(525)CVD30nm,(1050)115mnGaN.GaN165nmSiO2.HF,.5nmTi80nmPt.SiO2150nmAl,.2V,1pA,10V,57pA,.011A/W,350nm..MSM,,.4GaNMSM,GaN.SiSiC,.,Si(113)5829(2000)2©1995-2004TsinghuaTongfangOpticalDiscCo.,Ltd.Allrightsreserved.,,.,,,.,,.,,?.,,,.,.,,?,,,,,.(5),.,.,,,,,.,.,,,,..,..,.,,,,,.,.,,.,.(85)SiC,GaN.,;,;,.,.GaN.[1]KhanMA,KuzniaJN,OlsonDTetal.Appl.Phys.lett.,1992,60:29172919[2]BinetF,DubozJY,RosencherEetal.Appl.Phys.Lett.,1996,69:12021204[3]StevensKS,KinniburghM,BeresfordR.Appl.Phys.Lett.,1995,66:35183520[4]ZhangX,KungP,WalkerDetal.Appl.Phys.Lett.,1995,67:20282030[5]KhanMA,ShurMS,ChenQetal.Electron.Lett.,1995,31:398400[6]KhanMA,KuzniaJU,OlsonDTetal.Appl.Phys.Lett.,1993,63:24552456[7]CarranoJC,LiT,GrudowskiPAetal.Appl.Phys.Lett.,1998,72:54254431129(2000)2©1995-2004TsinghuaTongfangOpticalDiscCo.,Ltd.Allrightsreserved.