硅基GaN外延层的SIMS及XPS研究

GaNSIMSXPS3(310027)199883SIMSandXPSStudiesofGaNEpilayersGrownOnSiSubstratesZhangHaoxiang,YeZhizhen,ZhaoBinghui,YuanJun(TheStateKeyLab.ofSiliconMaterial,ZhejiangUniversity,Hangzhou,310027)AbstractGaNepilayersweregrownonSisubstratesbyreactivedepositioninvacuum.ThedepthprofileandsurfacecompositionoftheGaNfilmswerestudiedwithsecondaryionmassspectroscopyandX2rayphotoelec2tronspectroscopy.TheresultsshowthatGaatomssegregatetothesurface,whereasbelowthesurfacelayersGaandNatomsuniformlydistributeintheepilayers.SiandOimpuritiesexistingintheepilayersdonotaffectcrystalphaseandphotoluminescenceoftheGaNepilayers.In2situcleaningcaneffectivelyremovesurfaceoxygenontheSisubstrate.KeywordsGaNepilayer,X2rayphotoelectronspectroscopy,Secondaryionmassspec2troscopy,SiliconsubstrateGaNXGaN,GaN;Ga;Si,O,GaN,SiGaNXGaN,,,,[13]GaN,GaN,GaN,,(MOCVD),(MBE)2Al2O3GaN,GaN[4,5]GaN2Al2O32Al2O3,,GaN,GaN3(69890230)54319519999VACUUMSCIENCEANDTECHNOLOGY(CHINA)©1995-2004TsinghuaTongfangOpticalDiscCo.,Ltd.Allrightsreserved.,,,,GaN(),:(1)(37177%);(2)(41116%),GaN,GaN,GaN,GaN,HGHMS(HeteroepitaxyGrowthonHighMismatchedSubstrate)[6]GaN,GaN,GaN,HGHMSGaNMOCVD,MBE,ESCALABMK2IMS2THREEFGaN,,1Ga,,991999%:RCASi(100),,;,10-5Pa,95020min,[7];,,GaN1000,,SiH,OSiOx;(550)N2H2,H2O2,O,,,GaN,014210m/h,X(XRD)(TEM),GaN,TEMGaN(PL)IMS2THREEFGaN,ESCALABMK2GaN,GaNSIMSXPS21GaN(Si(100))XRD,GaN(0002),TEM,2,,,,,,Ga,N,Si,O,,GaN,OSi,GaN64319©1995-2004TsinghuaTongfangOpticalDiscCo.,Ltd.Allrightsreserved.1GaNXRD2GaNSIMSFig11XRDdiffractionspectrumofGaNepilayerFig12SIMSspectraofGaNepilayer,GaN,SIMS,Ga,Ga,:(1),GaN,N,N,,Ga;(2),Ga,,Ga,GaSi,:(1),Si;(2),100010-2Pa,SiO2,Si,,,SIMS,3GaNXPS(,),Ga,N,O,Ga,N,O,O34GaXPS2015eV,Ga(Ga1815eV)Ga,Ga5NXPS,(394eV)Ga;N,39915eV(N39717eV),,NGaNCGaCN=11118,GaNGa,:GaN11118,GaN6GaNPL,373nm(3133eV)7435:GaNSIMSXPS©1995-2004TsinghuaTongfangOpticalDiscCo.,Ltd.Allrightsreserved.,(FWHM)8nm,,,,3GaNXPS()4GaXPSFig13SurveyXPSspectrumofGaNepilayerFig14XPSspectrumofGaelement5NXPS6GaNPL()Fig15XPSspectrumofNelementFig16PLspectrum(RT)oftheGaNepilayer,Ga,GaN,Ga,,Ga,,,GaGaN,,(,Ga)SIMS,OSiO,OSi(),GaNn(378)84319©1995-2004TsinghuaTongfangOpticalDiscCo.,Ltd.Allrightsreserved.,,,0125mm0122mm,,,,,,,,,,AK,1..,1996,(4):12..:,19783,,..:,19944MorrellAM.ColorTelevisionPictureTubes.AcademicPress,1974(348)3GaNSIMSXPSGaN()(),GaN,GaSiO,GaNSIMS,Si1NakamuraS.MakaiT,SenoLM.ApplPhysLett,1994,74:16872NakamuraS,SenohM,NagahamaSetal.JpnJApplPhys,1996,35:743KhanMA,KuzniaJN,OlsonDTetal.ApplPhysLett,1994,65:11214NakamuraS,SenohM,NagahamaSetal.JpnJApplPhys,1996,35:745StevensKS,KinnibuighM,BeresfordR.ApplPhysLett,1995,66:35186AmanoH,AkasakiI,HiramatsuK.ThinSolidEpilayer,1988,163:4157LyerSS.ApplPhysLett,1990,57(9):89387319©1995-2004TsinghuaTongfangOpticalDiscCo.,Ltd.Allrightsreserved.