上海凸版光掩模有限公司竞争战略研究

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上海交通大学硕士学位论文上海凸版光掩模有限公司竞争战略研究姓名:高振玉申请学位级别:硕士专业:工商管理指导教师:于冷200701282010SWOTSWOT,STUDYOFCOMPETITIONSTRATEGYFORTOPPANPHOTOMASKCOMPANYLTD,SHANGHAIABSTRACTTheICindustrywasgrowingrapidlyinthelatest20years,whichownstothewell-developedtechnologyofsiliconchipreticle.Andphotomaskindustryisthekeytopromotethetechnologyofreticle.Photomaskindustryneedsnotonlyexcellenttechnology,uptodateequipmentsandmanagementskills,butalsofundsasinvestment.TodayanycommercialICmakingcannotbeapartfromthecoreindustry---Photomask.Chinagovernmenthasrealizedthatthesignificantstatusoftheleadingindustry,andhasagreedtoquicklystartupthephotomaskprojectwithforeignfundsseveralyearsago.Withtheseprojects,ChinaICindustrycanbeupgradedandoutputofproductioncanbeincreased.Theresultistodecreasethepoorrelianceofimport.Throughtenyears’development,ToppanPhotomaskShanghaiLTD,thefirstphotomaskmanufacturesiteenteredChinawhooccupiedtheleadingadvantage,hasbecomethefirstphotomaskproviderinChina.ButfacingtheadjustingofChinaICpolicy,competitorsenteringChina,ToppanpurchasedDupontPhotomaskLTD,ToppanPhotomaskShanghaiLTDhastore-evaluatethecompetitionstrategytogainlongtermincreasing.ThispaperanalyzedtheexternalenvironmentofChineseICIndustrytofindtheopportunityandthreatthatToppanShanghaifaced.ItalsoanalyzedthesourceofthecompanytofindthestrengthandweaknessofToppanShanghaihad.ThroughSWOTanalysis,thispapertriestosetupthecompetitionstrategy,companystrategyandfunctionstrategy.Firstly,thispaperintroducedthemanufactureflowofICandphotomaskmaking,pointedouthowToppanShanghaiestablishedthefirstphotomaskmanufacturesiteinChina.Alsothispapershowedthecompany’smission,strategyframeandthestatusofshareholderandtopmanagementstatus.Secondly,thispaperanalyzedtheexternalenvironmentofphotomaskmanufactureinChina,andsummarizedthefactorsofexternalenvironmentthroughEFAStable,throughthistabletheopportunityandthreatofenvironmentarepointedout.Meanwhile,thispaperanalyzedtheinternalsourceofToppanPhotomaskShanghai,andsummarizedthefactorsofinternalsourcesthroughIFAStable,throughthistablethestrengthandweaknessofthecompanyarepointedout.Thirdly,throughSWOTanalysis,thepaperdesignedthenewcompetitionstrategyforToppanShanghai—LowCostStrategyshouldbechangedtoDifferenceStrategy.Basedonthecompetitionstrategy,thepaperalsofiguredoutsomefunctionstrategies,andgavesomesuggestionsandmethodstocontroltheimplementationofthesenewstrategies.KEYWORDS:Photomask,CompanyStrategy,StrategyImplementationControl200701282007012820070128MBAMBA11.118831904()1947199411GDRAMGSIGigaScaleIntegration0.25um0.18um0.15um0.13um0.09um0.065um0.045umMBA21.2IC1-11-21-1Gartner5/061-2MBA31.3()1-31-3MBA41.41-4(Substrate)(CronQuartz)(Pellicle)(LayerDesignData)1-5,PatternGenerators()$400MillionResistTools()$50MillionEtchTool()$50MillionMetrologyTool$50MillionInspectionTool$300MillionRepairTool$50MillionCleanTool$30MillionAnalyticalTool$30MillionPHOTOMASK$2.5B1-4MBA51-5200460%0.07%15001.52000MBA6FoundryTSMCUMC1-12005TSMCUMC1-1200514TSMCUMC2006MBA7(ToppanPhotomaskLimitedCompanyShanghai)(DupontPhotomaskLimitedCompanyShanghai)20042.11802200801986NSDAC198920049788019941600MBA820051.8200220054TOPPANPRINTTING50019001002005(28%)(72%),(Photomask)26000.18um0.09um2.22.2.19020051MBA925/4/25/21Master(4,5,6,7,725)UT1(3X5,5X5,6X6)Copy(35,4,5,6,7)3:035/025/018/05()150/130/90()4562.2.22-1VLSI1/062-1MBA1012-2FYE2006200672-2237%DNP72-32-3MBA112.2.312-42005430%2-42003-20062040607082-52-52002-2008020040060080010001200140016001800JULAUGSEPOCTNOVDECJANFEBMARAPRMAYJUNMonthRevenue$K2003200420052006054MBA122.32.3.1(28%)(72%)2.3.2COOINTELMBA13EFAS3.13.1.11/1995200220063-13-1%%19950501918109819960823747100819971023567864199803255227921998070147769319981207378639199906102255852002022119853120041029225558200604.282255852006MBA142GDP200610.9%0.910.0%10.1%9.9%10%GDP31/81/104803.1.2OPCPSMMBA1586386320038ArFArF100nm65nm45nm22nm3.1.320007122010176611MBA161761833630.25800.2515MBA1745201017336200518530%200420054132181.529()20062232006182006530~501010~30MBA181085123000,18(2006-2020)1621321.529200436.814.3%530%2010400~600600~8001300~1600528.1%20101500183.1.4WTO3.2./MBA19.3.2.1801010PHOTRONICS20022006MBA201PHOTRONICS20061.829003-420.25460.180.50.25PHOTRONICS0.18LCD34MBA215WTO6PHOTRONICSPHOTORNICS0.1820060.183.2.21PHOTRONICSMEBESIII0.251500200020060.18Photronics()Photronics0.18LCD180003000ALTA35003700KLA-Tencor2006MBA220.250.180.8380003ZBA-23JBX5000LSJBX6AII()(800mm)220063-1DRAMTOPPAN3-1(3)MBA23(4)(5)(6)PHOTRONICS3.2.3(1)3-2SMBA243-2S(2)180nm26130nm8790nm15065nm30045nm6003-2100nm3-2≤100nm10/NGL193nmArF157nmF2XRLSCALPELEUVL3.153.202.201.872.164.36.33.52.76.0MBA253.2.4140%3-33-3(2)(3)PHOTRONICS(4)(5)10%(6)MBA263.2.53.2.62005WTOISO140003.3EFASWiWi1.00.0MBA27WiWiWi1.0SiSi51Wi*SiTi3.03.03-33-3(Wi)(Si)(Wi*Si)0.240.80.240.150.50.150.130.30.0530.0510.050.11MBA280.0540.20.0540.120.20.120.1540.60.154060.0520.10.0520.1540.60.1540.0520.10.0521.0Wi3.45Wi*Si3.453EFASMBA2920102004-20107MBA30IFAS4.1GPOGPOGPO4-14.2199660020052500PHOTORNICSMBA314-1MBA324.34.3.1(1)0.5~0.254-24-2(2)(3)0.18MBA3340%50%(4)(5)(6)4.3.24-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