集成电路专业英语论文

集成电路课程论文报告院系物理与电子信息工程学院专业电子信息工程班级学生姓名学号任课教师2013年12月26日IntegratedCircuitsxxxxxxxnameDepartmentofElectronicsandInformationEngineeringHuBeiUniversityofArtsandScienceP.R.China,441053123456662qq.comAbstract:CMOSICsincorporatebothNMOSandPMOStransistors,Anapplication-specificintegratedcircuit(ASIC)isanintegratedcircuit(IC)customizedforaparticularuse,ratherthanintendedforgeneral-purposeuse.Keywords:Circuits;Integrated;application-specific;1IntroductionDigitallogicandelectroniccircuitsderivetheirfunctionalityfromelectronicswitchescalledtransistor.Roughlyspeaking,thetransistorcanbelikenedtoanelectronicallycontrolledvalvewherebyenergyappliedtooneconnectionofthevalveenablesenergytoflowbetweentwootherconnections.Bycombiningmultipletransistors,digitallogicbuildingblockssuchasANDgatesandflip-flopsareformed.Transistors,inturn,aremadefromsemiconductors.Consultaperiodictableofelementsinacollegechemistrytextbook,andyouwilllocatesemiconductorsasagroupofelementsseparatingthemetalsandnonmetals.Theyarecalledsemiconductorsbecauseoftheirabilitytobehaveasbothmetalsandnonmetals.Asemiconductorcanbemadetoconductelectricitylikeametalortoinsulateasanonmetaldoes.Thesedifferingelectricalpropertiescanbeaccuratelycontrolledbymixingthesemiconductorwithsmallamountsofotherelements.Thismixingiscalleddoping.Asemiconductorcanbedopedtocontainmoreelectrons(N-type)orfewerelectrons(P-type).Examplesofcommonlyusedsemiconductorsaresiliconandgermanium.PhosphorousandboronaretwoelementsthatareusedtodopeN-typeandP-typesilicon,respectively.2MaterialsandMethodsAtransistorisconstructedbycreatingasandwichofdifferentlydopedsemiconductorlayers.Thetwomostcommontypesoftransistors,thebipolar-junctiontransistor(BJT)andthefield-effecttransistor(FET)areschematicallyillustrated.Thisfigureshowsboththesiliconstructuresoftheseelementsandtheirgraphicalsymbolicrepresentationaswouldbeseeninacircuitdiagram.TheBJTshownisanNPNtransistor,becauseitiscomposedofasandwichofN-P-Ndopedsilicon.Whenasmallcurrentisinjectedintothebaseterminal,alargercurrentisenabledtoflowfromthecollectortotheemitter.TheFETshownisanN-channelFET,whichiscomposedoftwoN-typeregionsseparatedbyaP-typesubstrate.Whenavoltageisappliedtotheinsulatedgateterminal,acurrentisenabledtoflowfromthedraintothesource.ItiscalledN-channel,becausethegatevoltageinducesanN-channelwithinthesubstrate,enablingcurrenttoflowbetweentheN-regions.Anotherbasicsemiconductorstructureisadiode,whichisformedsimplybyajunctionofN-typeandP-typesilicon.Diodesactlikeone-wayvalvesbyconductingcurrentonlyfromPtoN.Specialdiodescanbecreatedthatemitlightwhenavoltageisapplied.Appropriatelyenough,thesecomponentsarecalledlightemittingdiodes,orLEDs.Thesesmalllightsaremanufacturedbythemillionsandarefoundindiverseapplicationsfromtelephonestotrafficlights.Theresultingsmallchipofsemiconductormaterialonwhichatransistorordiodeisfabricatedcanbeencasedinasmallplasticpackageforprotectionagainstdamageandcontaminationfromtheout­sideworld.Smallwiresareconnectedwithinthispackagebetweenthesemiconductorsandwichandpinsthatprotrudefromthepackagetomakeelectricalcontactwithotherpartsoftheintendedcircuit.Onceyouhaveseveraldiscretetransistors,digitallogiccanbebuiltbydirectlywiringthesecomponentstogether.Thecircuitwillfunction,butanysubstantialamountofdigitallogicwillbeverybulky,becauseseveraltransistorsarerequiredtoimplementeachofthevarioustypesoflogicgates.3TheImprovedMethod3.1MethodoneAtthetimeoftheinventionofthetransistorin1947byJohnBardeen,WalterBrattain,andWilliamShockley,theonlywaytoassemblemultipletransistorsintoasinglecircuitwastobuyseparatediscretetransistorsandwirethemtogether.In1959,JackKilbyandRobertNoyceindependentlyinventedameansoffabricatingmultipletransistorsonasingleslabofsemiconductormaterial.Theirinventionwouldcometobeknownastheintegratedcircuit,orIC,whichisthefoundationofourmoderncomputerizedworld.AnICissocalledbecauseitintegratesmultipletransistorsanddiodesontothesamesmallsemiconductorchip.Insteadofhavingtosolderindividualwiresbetweendiscretecomponents,anICcontainsmanysmallcomponentsthatarealreadywiredtogetherinthedesiredtopologytoformacircuit.AtypicalIC,withoutitsplasticorceramicpackage,isasquareorrectangularsilicondiemeasuringfrom2to15mmonanedge.DependingontheleveloftechnologyusedtomanufacturetheIC,theremaybeanywherefromadozentotensofmillionsofindividualtransistorsonthissmallchip.Thisamazingdensityofelectroniccomponentsindicatesthatthetransistorsandthewiresthatconnectthemareextremelysmallinsize.DimensionsonanICaremeasuredinunitsofmicrometers,withonemicrometer(1mm)beingonemillionthofameter.Toserveasareferencepoint,ahumanhairisroughly100mmindiameter.SomemodernICscontaincomponentsandwiresthataremeasuredinincrementsassmallas0.1mm!WhenanICisdesignedandfabricated,itgenerallyfollowsoneoftwomaintransistortechnologies:bipolarormetal-oxidesemiconductor(MOS).BipolarprocessescreateBJTs,whereasMOSprocessescreateFETs.Bipolarlogicwasmorecommonbeforethe1980s,butMOStechnologieshavesinceaccountedthegreatmajorityofdigitallogicICs.N-channelFETsarefabricatedinanNMOSprocess,andP-c