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1RevA.01D120216PQN3109M6NNN-Channel30VFastSwitchingMOSFETAllinformationprovidedinthisdocumentissubjectedtoimportantnoticeConfidentialSymbolParameterRatingUnitsVDSDrain-SourceVoltage30VVGSGate-SourceVoltage±20VID@TC=25℃ContinuousDrainCurrent,VGS@10V1,7154AID@TC=100℃ContinuousDrainCurrent,VGS@10V1,797AID@TA=25℃ContinuousDrainCurrent,VGS@10V129AID@TA=70℃ContinuousDrainCurrent,VGS@10V123AIDMPulsedDrainCurrent2308AEASSinglePulseAvalancheEnergy3270.1mJIASAvalancheCurrent73.5APD@TC=25℃TotalPowerDissipation456WPD@TA=25℃TotalPowerDissipation42WTSTGStorageTemperatureRange-55to150℃TJOperatingJunctionTemperatureRange-55to150℃BVDSSRDSON(VGS=10V)ID(TC=25℃)30V1.5mΩ154ASymbolParameterTyp.Max.UnitRθJAThermalResistanceJunction-Ambient1---62℃/WRθJCThermalResistanceJunction-Case1---2.2℃/WAbsoluteMaximumRatingsThermalDataTheQN3109M6NisthehighestperformancetrenchN-ChannelMOSFETwithextremehighcelldensity,whichprovideexcellentRDSONandgatechargeformostofthesynchronousbuckconverterapplications.TheQN3109M6NmeettheRoHSandGreenProductrequirementwithfullfunctionreliabilityapproved.AdvancedhighcelldensityTrenchtechnologySuperLowGateChargeGreenDeviceAvailableGeneralDescriptionFeaturesApplicationsHighFrequencyPoint-of-LoadSynchronousBuckConverterforMB/NB/UMPC/VGANetworkingDC-DCPowerSystemLoadSwitchPRPAK5X6PinConfigurationProductSummaryDSGSS2RevA.01D120216PQN3109M6NNN-Channel30VFastSwitchingMOSFETAllinformationprovidedinthisdocumentissubjectedtoimportantnoticeConfidentialSymbolParameterConditionsMin.Typ.Max.UnitBVDSSDrain-SourceBreakdownVoltageVGS=0V,ID=250uA30------V△BVDSS/△TJBVDSSTemperatureCoefficientReferenceto25℃,ID=1mA---0.008---V/℃RDS(ON)StaticDrain-SourceOn-Resistance2VGS=10V,ID=30A---1.21.5mΩVGS=4.5V,ID=15A---1.92.5VGS(th)GateThresholdVoltageVGS=VDS,ID=250uA1.2---2.5V△VGS(th)VGS(th)TemperatureCoefficient----5.3---mV/℃IDSSDrain-SourceLeakageCurrentVDS=24V,VGS=0V,TJ=25℃------1uAVDS=24V,VGS=0V,TJ=55℃------5IGSSGate-SourceLeakageCurrentVGS=±20V,VDS=0V------±100nAgfsForwardTransconductanceVDS=5V,ID=15A---62---SRgGateResistanceVDS=0V,VGS=0V,f=1MHz---0.9---ΩQgTotalGateCharge(10V)VDS=15V,VGS=10V,ID=15A---47.6---nCQgTotalGateCharge(4.5V)VDS=15V,VGS=4.5V,ID=15A---21.8---QgsGate-SourceCharge---6.9---QgdGate-DrainCharge---8.0---Td(on)Turn-OnDelayTimeVDD=15V,VGS=10V,RG=3.3ΩID=15A---12.1---nsTrRiseTime---43.8---Td(off)Turn-OffDelayTime---37.1---TfFallTime---9.0---CissInputCapacitanceVDS=15V,VGS=0V,f=1MHz---3006---pFCossOutputCapacitance---1941---CrssReverseTransferCapacitance---67---SymbolParameterConditionsMin.Typ.Max.UnitEASSinglePulseAvalancheEnergy5VDD=25V,L=0.1mH,IAS=42.1A88.62------mJSymbolParameterConditionsMin.Typ.Max.UnitISContinuousSourceCurrent1,6VG=VD=0V,ForceCurrent------154AISMPulsedSourceCurrent2,6------308AVSDDiodeForwardVoltage2VGS=0V,IS=1A,TJ=25℃------1.2VtrrReverseRecoveryTimeIF=15A,dI/dt=100A/µs,TJ=25℃---159---nSQrrReverseRecoveryCharge---194---nCNote:1.Thedatatestedbysurfacemountedona1inch2FR-4boardwith2OZcopper.2.Thedatatestedbypulsed,pulsewidth≦300us,dutycycle≦2%3.TheEASdatashowsMax.rating.ThetestconditionisVDD=25V,VGS=10V,L=0.1mH4.Thepowerdissipationislimitedby150℃junctiontemperature5.TheMin.valueis100%EAStestedguarantee.6.ThedataistheoreticallythesameasIDandIDM,inrealapplications,shouldbelimitedbytotalpowerdissipation.7.Themaximumcurrentratingispackagelimited.ElectricalCharacteristics(TJ=25℃,unlessotherwisenoted)GuaranteedAvalancheCharacteristicsDiodeCharacteristics3RevA.01D120216PQN3109M6NNN-Channel30VFastSwitchingMOSFETAllinformationprovidedinthisdocumentissubjectedtoimportantnoticeConfidentialTypicalCharacteristicsFig.1TypicalOutputCharacteristicsFig.2TypicalOutputCharacteristicsFig.5ForwardCharacteristicsofReverseFig.6Gate-ChargeCharacteristicsFig.3On-Resistancevs.Gate-SourceFig.4Drain-SourceOn-StateResistance4RevA.01D120216PQN3109M6NNN-Channel30VFastSwitchingMOSFETAllinformationprovidedinthisdocumentissubjectedtoimportantnoticeConfidentialFig.12SafeOperatingAreaFig.11CapacitanceFig.7NormalizedVGS(th)vs.TJFig.8NormalizedRDSONvs.TJFig.10SinglePulseMaximumPowerDissipationFig.9SinglePulseAvalancheEnergy5RevA.01D120216PQN3109M6NNN-Channel30VFastSwitchingMOSFETAllinformationprovidedinthisdocumentissubjectedtoimportantnoticeConfidentialFig.13TransientThermalImpedance6RevA.01D120216PQN3109M6NNN-Channel30VFastSwitchingMOSFETAllinformationprovidedinthisdocumentissubjectedtoimportantnoticeConfidentialImportantNoticeUBIQanditssubsidiariesreservetherighttomakecorrections,modifications,enhancements,improvements,andotherchangestoitsproductsandservicesatanytimeandtodiscontinueanyproductorservicewithoutnotice.Customersshouldobtainthelatestrelevantinformationbeforeplacingordersandshouldverifythatsuchinformationiscurrentandcomplete.UBIQproductsaresoldsubjecttothetermsandconditionsofsalesuppliedatthetimeoforderacknowledgment.However,noresponsibilityisassumedbyUBIQoritssubsidiariesforitsuseorapplicationofanyproductorcircuit;norforanyinfringementsofpatentsorotherrightsofthirdpartieswhichmayresultfromitsuseorapplication,includingbut