光无线通讯接收器电路设计与研究

MXCorp.–2008光无线通讯集成电路设计与研究MXCorp.–20081引言2研究工作介绍2.1ImagingDiversityReceiver2.2LownoiseTIAdesign2.3HybridarchitectureofFSO/RF3总结MXCorp.–2008“光无线接入”是近年来才被广泛重视的研究问题，研究者提出这个命题的初衷应该是技术优势互补。自由空间光通讯（FSO）光纤无线通讯（ROF）MXCorp.–2008短距离光宽带服务•室内多媒体网络服务，光传输优于射频•室内办公，光无线LAN采用红外/可见光调制的方式来传送宽带数据给固定用户或移动用户•与射频方式的Wi-Fi,WiMAX等不同，光能提供更高的带宽，提供给更多的用户同时使用，并且没有相互干扰。MXCorp.–2008空间光通信：（成为下一代光通信的发展方向之一）超稳激光器、新型光束控制器、高灵敏度和高数据率接收器一些先进国家已经推出空间光通信产品，如•美国朗讯的2.5×4Gbps波分复用系统，•日本佳能公司的无线光通信系统等。MXCorp.–2008MXCorp.–2008MXCorp.–2008主要研究项目Studythedesignofopticalreceiverandtransmittercircuits:•􀂉Low-noisebroadbandfront-endtopologies•􀂉AutomaticGainControl•􀂉Phase-LockedLoopsandClock/DataRecovery•􀂉Multiplexers,LaserDriversReceiverandTransmitterRealization•􀂉Opto-to-electronicintegration，•CircuitLayoutOptimization•􀂉PerformanceComparisonofCMOS,BiCMOS•􀂉OpticalTransceiverIntegration•􀂉Tradeoffsincost,powerdissipation,speed•􀂉ComparisonofOpticalFibervs.Free-spacelinks•􀂉OpticalInterconnect，OpticalWirelessLANsMXCorp.–2008ISSCC2007Opticalcommunications4x10Gb/sDWDMtransceiver90nmCMOS16Gb/sTransceiver220Gb/sBurst-ModeCDRCircuitUsingInjection-LockingTechniqueA33.6-to-33.8Gb/sBurst-ModeCDRin90nmCMOSCDR（2）ACMOSBurst-ModeTIAwithStepAGCandSelectiveInternallyCreatedResetfor1.25Gb/sEPONA40mW3.5kΩ3Gb/sCMOSdifferentialTransimpedanceAmplifierUsingNICA40Gb/sTransimpedance-AGCAmplifierwith19dBDRin90nmCMOSTIA（3）A1.2V5.2mW40dB2.5Gb/sLimitingAmplifierin0.18μmCMOSUsingNICAFractional-NPLLforSONET-QualityClock-SynthesisApplicationsLA，PLLMXCorp.–2008Researchwork•CMOSImagingdiversityreceiver•low-noiseTIAMXCorp.–2008LabResearchBroadbandOpticalWirelessLinksMulti-Gb/s,Low-poweropticaltransceiversforsecure,high-speeddata/sensorcommunicationBiomedicalImagingImagingReceiversforfrequency-domainopticalmammographyIntegratedmicroarraysforfluorescencedetectionRFandOpticalNetworksHighPerformanceICsforintegrationofmicrowavewirelesswiththeopticalfiberbackboneOptoelectronicIntegratedCircuitsMXCorp.–2008WhyOpticalWireless?OpticalUnregulatedTHzchannelsNoEMISecureChannelsWDMHigherAggregateCapacityBasebandProcessingLow-PowerCompatibilityLOSchannelspronetoblockingLowtransceivercomplexityRFHighlyRegulatedSpectrumLowdatarates(10sofMb/s)HighUserMobility,LongRangeHighRxSensitivityNoobstructionMXCorp.–2008IntegratedSystem-in-PackageMicrosystemsforOpticalWirelessNetworksCeramicPackageCMOSTransceiver,SignalProcessing,CDRIII/VOptoelectronicDeviceArraysCMOSTransceiver,SignalProcessing,CDRIII/VOptoelectronicDeviceArraysCMOS:Sensitiveanalogcircuitsintegratedwithlow-powerback-enddigitalprocessingcircuitsIII/Vdevicesallowhighertransmitpowersandhybridflip-chipintegrationMetamaterialsforbeamsteering,filtering,waveguidingMXCorp.–2008CellularOpticalLANApproachBasestationToWiredNetworkTerminalBasestationToWiredNetworkTerminal*O’Brien,etal.,IEEEJ.STQE,Jan/Feb2005.MXCorp.–2008“Broadbandroomservicebylight”ByMohsenKavehrad,ScientificAmerica,July2007MXCorp.–2008ReceiverDesignChallengesSingleelementdetectorLargeareaforcoverage–Poorbandwidth–Ambientnoise–Noiseperformancedegradationpd3RC1dB2,222)(144AmpinpdfmfeqCCRgkTRkTiMXCorp.–2008ReceiverSegmentationSegmenteddetectorarrayhassameFOVassingleelementAmbientnoiseseenbyeachdetectorisreducedMXCorp.–2008ReceiverSubsystemMATIA(AGC)Selector/CombinerCircuitArchitectureClockRecoveryManchesterDecoderLevelTranslationClockDATAMATIA(AGC)MATIA(AGC)IsControlMXCorp.–2008Self-BiasedTIAAutomaticGainControl*thisprojectpresentedatthe2007IEEEWOCNConferenceonJuly5,2007inSingapore.MXCorp.–2008ChipSchematicMXCorp.–2008ChipSpecificationsTechnology0.5μmAMICMOSDCGain50dBΩ–38dB-3-dBBandwidth345MHzPowerDissipation106mWInputCapacitance6pFChipArea270μmx125μmInputReferredNoise12.5pA/√HzInputCapacitorAGCInputOutputAGCOutputGroundVddBiasBiasMXCorp.–2008TransientSimulationMXCorp.–2008BlockdiagramofCap-FeedbackAGCTIARIVinoutCgAmdB)1(3MXCorp.–2008SchematicofCap-FeedbackAGCTIAMXCorp.–2008LayoutofTIAwithAGCTechnology0.5μmAMICMOSDCGain53dBΩ–38dB-3-dBBandwidth436.2MHz@5pF548.8MHz@0.5pFPowerDissipation35mWTIA31.1mWCMFB1.5mWAGC2.4mWChipArea190μmx160μmMin.DetectablePhotocurrentBER=10-124μA@5pF0.6μA@0.5pFMXCorp.–2008SimulationofCap-FeedbackAGCTIAMXCorp.–2008LayoutofWholeChipwithTIA&LAMXCorp.–2008A1Gb/s30dBCMOSLAMXCorp.–20082.1ImagingDiversityReceiver(CurrentTopology)BlockDiagram:OverallCircuitOperation:–Lightimpingesuponphotodiodedetector.–SNRComparatordetermineswhetherthephotodiodehasbeenstruckornot.–Selector/CombinerCircuit…Photodiode1Photodiode7Pre-AmpSNRComparatorSelector/CombinerCircuitPre-AmpSNRComparatorMXCorp.–2008ImagingDiversityReceiverSelector/CombinerCircuitAnalogSignalProcessingCircuitsEnablesdiversitycombiningincreasingoutputSNRFlip-Chip:III-Vdeviceswithlowcost,low-powerCMOSScalabilitySegmentedreceiverchiptoaccountforvariabledeviceyieldMXCorp.–2008ProposedArchitectureCurrentTopology:–CurrenttoVoltagetoCurrentConversionProposedArchitecture:CurrentMirror!–ProposedAdvantages:•SingleStageBenefits•SmallerArea•LowerNoise•LowerDistortion•NoStabilityIssues(aspresentedbyt