Demo-MTBF--(MIL-217N2)

Nov/13/2004TESTMODEL:DesignReviewedBy:TESTLEVEL:DQReviewedBy:JOBNO.:DQTestedBy:CONDITION:1.Input:Vac/Hz2.Output:FullloadW3.RoomTemp.:℃PARTSFAILURERATEIC:0.0046DIODE:#VALUE!XSTR:#DIV/0!FET:0.0000OPTOELECTRONIC:0.0910RESISTOR:#DIV/0!CAPACITOR:#DIV/0!CHOKEs&X'FMR:0.1990SOCKET:#NUM!PCB:0.0000FUES:0.0100TOTAL:#VALUE!lp=#VALUE!Failures/106HoursMTBF=#VALUE!HoursReliabilityPrediction--MIL-HDBK-217FNOTICE2--SUMThePage1of14SUMThePage2of14ParameterDescriptionForMIL-HDBK-217FNOTICE2ForRelaysSStressRateForPowerorVoltageLoadStressFactorForRelaysπFContactFormFactorπCDescriptionApplicationFactorCapacitanceFactorContactConstructionFactorN2πQπPπRParameterπAπLStressFactorPowerRatingFactorCurrentRatingFactorπENpπSRπTNπVN1RemarkForTransistorForCapForDiodeπSEnvironmentFactorPowerFactorActivePinsFactorQualityFactorLearningFactorForTransistorForConnector&SocketsVrateForSCRs,TriacsForMicrocircuitIfrmsPowerforRes.,VoltageforDiodeParameterλPλbPPmax.DescriptionThePartFailureRateTheBaseFailureRateNumberofCircuitPlanesVOPC1POPPrC2RatedPower(W)ActualPowerDissipation(W)RatedPower(W)PlatedThroughHolesRateVoltagePTHForRelaysRemarkForPCBForRes.ForTransistorSeriesResistanceFactorTemperatureFactorVoltageStressFactorOperationVoltageComplexityFailureRatePackageFailureRateforallMicrocircuitsApplicationandConstructionFactorForPCBForPCBaTypeFactorForπVForCapEaNumberofFunctionalPinsForPCBForSCRs,TriacsRMS.RatedForwardCurrent(Amps)ForConnector&SocketsQuantityofHandSolderedPTHsForPCBEffectiveActionEnergy(eV)ForπTQuantityofWaveSolderedFunctionalPTHsNumberofActivePinsForResistorandCap&MicrocircuitParameterThePage3of14Microcircuits,Gate/LogicArraysandMicroprocessorsλP=(C1πT+C2πE)πQπLFailures/106HoursπT=0.1*exp((-Ea/8.617*10-5)*(1/(TC+273)-1/298))C2=3.0*10-5(NP)2.01ParentlevelP/NSymbolStyleTC(℃)C1EaπTNpPackageLevel(C2)C2πEπQY(Years)πLλPIC0.0100.350.02940.000000.52.02010.000574IC0.0100.350.02940.000000.52.02010.000574IC0.0100.350.02940.000000.52.02010.000574IC0.0100.350.02940.000000.52.02010.000574IC0.0100.350.02940.000000.52.02010.000574IC0.0100.350.02940.000000.52.02010.000574IC0.0100.350.02940.000000.52.02010.000574IC0.0100.350.02940.000000.52.02010.000574SUM0.00459Note:Y=YearsgenericdevicetypehasbeeninproductionNp=NumberofFunctionalPinsIC(5.1)ThePage4of14DiodeλP=λbπTπSπCπQπEFailures/106HoursπT=exp(-3091*(1/(TC+273)-1/298))Vs=VoltageStressRatio=Vrop/VrateπS=0.054(Vs=0.3)=Vs2.43(0.3Vs=1)ParentlevelP/NSymbolStyleλbTC(℃)RatedVrAppliedVrπTVsπSπCπQπEλPERROR0.000.387#DIV/0!#DIV/0!2.05.51.0#VALUE!ERROR0.000.387#DIV/0!#DIV/0!2.05.51.0#VALUE!ERROR0.000.387#DIV/0!#DIV/0!2.05.51.0#VALUE!ERROR0.000.387#DIV/0!#DIV/0!2.05.51.0#VALUE!ERROR0.000.387#DIV/0!#DIV/0!2.05.51.0#VALUE!ERROR0.000.387#DIV/0!#DIV/0!2.05.51.0#VALUE!ERROR0.000.387#DIV/0!#DIV/0!2.05.51.0#VALUE!ERROR0.000.387#DIV/0!#DIV/0!2.05.51.0#VALUE!ERROR0.000.387#DIV/0!#DIV/0!2.05.51.0#VALUE!ERROR0.000.387#DIV/0!#DIV/0!2.05.51.0#VALUE!ERROR0.000.387#DIV/0!#DIV/0!2.05.51.0#VALUE!ERROR0.000.387#DIV/0!#DIV/0!2.05.51.0#VALUE!ERROR0.000.387#DIV/0!#DIV/0!2.05.51.0#VALUE!ERROR0.000.387#DIV/0!#DIV/0!2.05.51.0#VALUE!SUM#VALUE!Diode(6.1)ThePage5of14Transistors,LowFrequency,BipolarDescription:NPNandPNP(Frequency200MHz)λP=λbπTπAπRπSπQπEFailures/106HoursπT=exp(-2114*(1/(TC+273)-1/298))Vs=(AppliedVCE)/(RatedVCEO)πS=0.045exp(3.1*Vs)πR=0.43(Pr=0.1W)=Pr0.37(Pr0.1W)ParentlevelP/NSymbolStyleλbTC(℃)Prated(W)RatedVCEOAppliedVCEπAπTπRVsπSπQπEλP0.000740.00.5220.430#DIV/0!#DIV/0!5.51.0#DIV/0!0.000740.00.5220.430#DIV/0!#DIV/0!5.51.0#DIV/0!0.000740.00.5220.430#DIV/0!#DIV/0!5.51.0#DIV/0!0.000740.00.5220.430#DIV/0!#DIV/0!5.51.0#DIV/0!0.000740.00.5220.430#DIV/0!#DIV/0!5.51.0#DIV/0!SUM#DIV/0!Note:VCE=Voltage,CollectortoEmitter.VCEO=Voltage,CollectortoEmitter.BaseOpenTransistor(6.3)ThePage6of14Transistors,LowFrequency,SiFETDescription:N-ChannelandP-ChannelSiFET(Frequency=400MHz)λP=λbπTπAπQπEFailures/106HoursπT=exp(-1925*(1/(TC+273)-1/298))ParentlevelP/NSymbolStyleλbTC(℃)πTπAπQπEλPMOSFET0.012000.5535.51.00.00000MOSFET0.012000.5535.51.00.00000SUM0.000000FET(6.4)ThePage7of14Optoelectronics,Detectors,Isolators,EmittersDescription:Photodetectors,Opto-isolators,EmittersλP=λbπTπQπEFailures/106HoursπT=exp(-2790*(1/(TC+273)-1/298))ParentlevelP/NSymbolStyleλbTC(℃)πTπQπEλPOpto-Coupler0.0130.4245.51.00.03034Opto-Coupler0.0130.4245.51.00.03034Opto-Coupler0.0130.4245.51.00.03034SUM0.091008Opto(6.11)ThePage8of14ResistorλP=λbπTπPπSπQπEFailures/106HoursπT=exp(-Ea/8.617x10-5(1/(T+273)-1/298))πP=(PowerDissipation)0.39πS=0.71exp1.1(S)--Column1=0.54exp2.04(S)--Column2S=(ActualPowerDissipation)/(PowerDissipation)ParentlevelP/NSymbolStyleλbTC(℃)Prated(W)Papplied(W)Column(ForπT)EaπTColumn(ForπS)πPSπSπQπEλP0.00370.0020.080.75210.000#DIV/0!#DIV/0!10.01.0#DIV/0!0.00370.0020.080.75210.000#DIV/0!#DIV/0!10.01.0#DIV/0!0.00370.0020.080.75210.000#DIV/0!#DIV/0!10.01.0#DIV/0!0.00370.0020.080.75210.000#DIV/0!#DIV/0!10.01.0#DIV/0!0.00370.0020.080.75210.000#DIV/0!#DIV/0!10.01.0#DIV/0!0.00370.0020.080.75210.000#DIV/0!#DIV/0!10.01.0#DIV/0!0.00370.0020.080.75210.000#DIV/0!#