ICS31.080.200K46k46号:53939-2016准T/CEC155—2018柔性输电用压接型绝缘栅双极晶体管(IGBT)器件的一般要求Generalrequirementsforpress-packinsulategatebipolartransistors(IGBT)forflexibletransmission2018-04-01实施中国电力企业联合会发布2018-01-24发布T/CEC155—2018I目次前言···································································································································································II1范围······························································································································································12规范性引用文件··········································································································································13术语和定义··················································································································································14代号······························································································································································15型号和尺寸··················································································································································26额定值和特性参数······································································································································27检验······························································································································································48标志和订货单··············································································································································7附录A(规范性附录)失效短路特性试验···································································································8T/CEC155—2018II前言为规范柔性输电用压接型绝缘栅双极晶体管(IGBT)器件的采购、应用工作,制定本标准。本标准参照GB/T1.1—2009《标准化工作导则第1部分:标准的结构和编写》给出的规则起草。请注意本标准的某些内容可能涉及专利权。本标准的发布机构不承担识别这些专利权的责任。本标准由中国电力企业联合会提出并归口。本标准起草单位:全球能源互联网研究院。本标准主要起草人:温家良、潘艳、张朋、李现兵、李金元、金锐、韩荣刚、林仲康、武伟、石浩、田丽纷。本标准为首次发布。本标准在执行过程中的意见或建议反馈至中国电力企业联合会标准化管理中心(北京市白广路二条一号,100761)。T/CEC155—20181柔性输电用压接型绝缘栅双极晶体管(IGBT)器件的一般要求1范围本标准规定了柔性输电用压接型绝缘栅双极晶体管的型号、尺寸、额定值、特性参数、检验、标志和订货单的技术要求。本标准适用于柔性输电用压接型绝缘栅双极晶体管器件系列。2规范性引用文件下列文件对于本文件的应用是必不可少的。凡是注日期的引用文件,仅注日期的版本适用于本文件。凡是不注日期的引用文件,其最新版本(包括所有的修改单)适用于本文件。GB/T2423.5—1995电工电子产品环境试验第2部分:试验方法试验Ea和导则:冲击GB/T2423.6—1995电工电子产品环境试验第2部分:试验方法试验Eb和导则:碰撞GB/T2423.10—2008电工电子产品环境试验第2部分:试验方法试验Fc:振动(正弦)GB/T2423.22—2012环境试验第2部分:试验方法试验N:温度变化GB/T4023—2015半导体器件分立器件和集成电路第2部分:整流二极管GB/T4937.1—2006半导体器件机械和气候试验第1部分:总则GB/T17573—1998半导体器件分立器件和集成电路第1部分:总则GB/T29332—2012半导体器件分立器件第9部分:绝缘栅双极晶体管(IGBT)3术语和定义GB/T17573—1998、GB/T29332—2012和GB/T4023—1997界定的以及下列术语和定义适用于本文件。3.1短路电流shortcurrent绝缘栅双极晶体管在规定的集电极-发射极电压和栅极-发射极电压条件下,发生短路状态时在一定时间内可承受的最大电流。3.2总耗散功率totalpowerdissipation压接型绝缘栅双极晶体管器件正常工作所能承受的最大发热功率,由绝缘栅双极晶体管单元和二极管单元(如有)两部分发热功率组成。4代号下列代号适用于本文件。ISC:短路电流。Rth(j-c)IGBT:绝缘栅双极晶体管结壳热阻。Zth(j-c)IGBT:绝缘栅双极晶体管结壳阻抗。T/CEC155—20182Rth(j-c)DIODE:二极管结壳热阻。Zth(j-c)DIODE:二极管结壳阻抗。5型号和尺寸5.1型号型号的构成和各部分的意义如图1所示。图1型号构成及意义5.2尺寸图2和图3分别示出圆形和长方形两种封装形式,所对应尺寸A、Dmax、D1、D2、d1、h1、L1、L2、H、H1、W、W1、B、B1、L3、L4应符合给定型号的要求或订货合同的规定。图2圆形外观尺寸图3长方形外观尺寸6额定值和特性参数6.1额定值柔性输电用压接型绝缘栅双极晶体管器件的额定值(极限值)参数列于表1。额定值应符合给定型号的要求和订货合同规定。T/CEC155—20183表1额定值(极限值)序号额定值符号定义引用标准单位绝缘栅双极晶体管单元1集电极-发射极电压VCESGB/T29332—2012的5.1.3V2集电极连续电流ICGB/T29332—2012的5.1.5A3集电极峰值电流ICMGB/T29332—2012的6.2.4A4栅极-发射极电压VGESGB/T29332—2012的5.1.4V5短路电流ISCGB/T29332—2012的5.1.11A二极管单元6正向直流电流IFGB/T4023—2015的Ⅲ.3.2.5A7正向重复峰值电流IFRMGB/T4023—2015的Ⅲ.3.2.2A8正向(不重复)浪涌电流IFSMGB/T4023—2015的Ⅲ.3.2.4A器件9总耗散功率PtotGB/T29332—2012的5.1.8W10结温Tj、TvjGB/T29332—2012的5.1.1℃11贮存温度TstgGB/T29332—2012的5.1.2℃12安装力FGB/T29332—2012的5.1.13kN13质量m—g6.2特性参数柔性输电用压接型绝缘栅双极晶体管器件的特性参数列于表2。特性参数应符合给定型号的要求和订货合同规定。表2特性参数序号特性参数和条件符号定义引用标准单位绝缘栅双极晶体管单元1集电极-发射极饱和电压(Tj=25℃、Tjmax)VCEsatGB/T29332—2012的5.2.3V2栅极-发射极阈值电压(Tj=25℃)VGE(th)GB/T29332—2012的5.2.4V3栅极-发射极短路时的集电极截止电流(Tj=25℃、Tjmax)ICESGB/T29332—2012的5.2.6mA4集电极-发射极短路时的栅极漏电流(Tj=25℃、Tjmax)IGESGB/T29332—2012的5.2.6nA5电容(Tj=25℃)5.1输入电容CiesGB/T29332—2012的5.2.7.1nF5.2输出电容CoesGB/T29332—2012的5.2.7.2nF5.3反向传输电容CresGB/T29332—2012的5.2.7.3nFT/CEC155—20184表2(续)序号特性参数和条件符号定义引用标准单位6栅极电荷QGGB/T29332—2012的5.2.8μC7栅极内阻rgGB/T29332—2012的5.2.9Ω8开通期间的各时间间隔和开通能量(Tj=25℃、Tjmax)8.1开通延迟时间td(on)GB/T29332—2012的5.2.12.1ns8.2上升时间trGB/T29332—2012的5.2.12.1ns8.3开通时间tonGB/T29332—2012的5.2.12.1ns8.4开通能量EonGB/T29332—2012的5.2.10mJ9关断期间的各时间间隔和关断能量(Tj=25℃、Tjmax)9.1关断延迟时间td(off)GB/T29332—2012的5.2.12.2ns9.2下降时间tfGB/T29332—2012的5.2.12.2ns9.3关断时间toffGB/T29332—2012的5.2.12.2ns9.4尾部时间tZGB/T29332—2012的5.2.12.2ns9.5关断能量EoffGB/T29332—2012的5.2.11mJ10IGBT结壳热阻Rth(j-c)IGBTGB/T29332—2012的5.2.13K/W11IGBT结壳瞬态热阻抗Zth(j-c)IGBTGB/T29332—2012的5.2.13二极管单元12正向直流电压(Tj=25℃、Tjmax)VFGB/T4023—2015的Ⅲ.7.2.1V13反向恢复的特性参数(Tj=25℃、Tjmax)13.1反向恢复电流IRRGB/T4023—2015的Ⅲ.7.8A13.2恢复电荷QrGB/T4023—2015的Ⅲ.7.7μC13.3反向恢复时间trrGB/T4023—2015的Ⅲ.7.7ns13.4反向恢复能量ErecGB/T4023—2015的Ⅲ.7.7mJ14二极管结壳热阻Rth(j-c)DIODEGB/T4023—2015的Ⅲ.8.1K/W15二极管结壳瞬态热阻抗Zth(j-c)DIODEGB/T4023—2015的Ⅲ.8.17检验7.1出厂检验7.1.1出厂检验项目分为必检和抽检项目两类,分别列于表3和表4。检验所采用的数值和确切的规定条件应符合给定型号的要求和有关标准中相应试验的要求以及订货合同规定。7.1.2必检项目应对全部器件进行。全部必