1--英飞凌功率器件的新技术在开关电源中的应用--深圳

Forinternaluseonly功率器件的新技术在开关电源中的应用王志力2013.7开关电源系统解决方案背景英飞凌提高PFC效率方案英飞凌提高LLC效率方案低待机功耗CoolSET总结开关电源未来发展方向到目前…效率未来趋势…效率&功率密度5年前现在201510W/inch³40W/inch³PercentLoading20%50%100%20%50%100%20%50%100%20%50%100%10%20%50%100%10%20%50%100%115Vac80%80%80%82%85%82%85%88%85%87%90%87%82%90%92%89%230Vac---81%85%81%85%89%85%88%92%88%82%90%94%91%90%94%96%91%Titaninumstandardbronzesilvergoldplatinum50W/inch³Forinternaluseonly主功率部分ICE2HS01G开关电源系统解决方案推荐的白金电源系统架构600VCoolMOSTMCP/P6/C7IPP60R250CP600VCoolMOSTMP6/CFDIPA60R600P6SiCDiodeGen5IDH06G65C5PFC部分ICE3PCS01G辅助和待机部分ICE3AR2280JZ20W~25WICE2QR2280Z20W~25WBSC039N06NSICE3AR10080CJZSiCDiodeGen5CoolMOSTMP6/CFDCoolMOSTMCP/P6/C7新的OptiMOSTM开关电源系统解决方案背景英飞凌提高PFC效率方案英飞凌提高LLC效率方案低待机功耗CoolSET总结负载轻载半载满载效率96.99%97.05%96.53%OVPVSENSESGNDISENSEBOPFREQICOMPP-DSO-14GATEPGNDVCCVREFVB_OKVBTHL_ENBOFO90~270VacLineFilterCELBoostRCS1RGDDBYPDBRCS2CBRBVS2RBVS3RBVS1RGSRBVS5RBVS6RBVS4BOPCSGATEPGNDOVPVrefDBRO1DBRO2VB_OKBOFORNTCPWMFeedbackRBOFO2RBOFO1ROSCCICOMPRVB2CVCCVCCSGNDVCCICOMPOSCVBTHL/ENQRelVCCRRelVSENSECBRORBRO2RBRO1RBRO3RVB1开关电源系统解决方案PFC部分ICE3PCS01G英飞凌在PFC部分的产品CoolMOSTM碳化硅二极管开关电源系统解决方案PFC部分MOSFET/SiC英飞凌第五代碳化硅介绍(600-650V):产品定义和市场定位价格性格(效率,密度)SiG2其它品牌200505101520253035400.002.004.006.008.0010.0012.0014.00VF(V)IF(A)BipolarpndiodeforwardcharacteristicsurgecurrentSchottkydiodeforwardcharacteristicCombinedcharacteristics05101520253035400.002.004.006.008.0010.0012.0014.00VF(V)IF(A)BipolarpndiodeforwardcharacteristicsurgecurrentSchottkydiodeforwardcharacteristicCombinedcharacteristicsBipolarpndiodeforwardcharacteristicsurgecurrentSchottkydiodeforwardcharacteristicCombinedcharacteristicsG32009SoftsolderingDiffusionsolderingG52012第五代主要特征:Vbr=650V(G2,G3是600V)IF最大到40AVf=1.5V(所有电流)通态损耗≤G2&G3-Qc=G3G5G2提高轻载效率对于G2和G3接近定价低于第二代650V第五代碳化硅二极管和热特性降低热阻:•更好的散热结构•更低的芯片结温•更低的通态损耗热仿真:在TO-220封装等效的尺寸,损耗功率=75WImprovedSold.ImprovedSold.+Thin-WaferG5G3G2Rth=2.0K/WRth=1.5K/WRth=1.2K/W•-Vbr=650V全部的五代产品•-英飞凌提供市场上在650V最宽范围的碳化硅二极管IDxxxSG6xC5InfineonDiodePackagetypeCurrentrateSiC(omittedinG5)DiffusionsolderingX10isVbrvoltageSurgecurrentcapabilityExplicitreferencetoG5•-最大电流等级从16A到40A-共五种封装;其中三个新封装NomenclatureTO220R2LTO247D2PAKR2LThinPAK8x82AIDH02G65C5IDK02G65C5IDL02G65C53AIDH03G65C5IDK03G65C54AIDH04G65C5IDK04G65C5IDL04G65C55AIDH05G65C5IDK05G65C56AIDH06G65C5IDK06G65C5IDL06G65C58AIDH08G65C5IDK08G65C5IDL08G65C59AIDH09G65C5IDK09G65C510AIDH10G65C5IDW10G65C5IDK10G65C5IDL10G65C512AIDH12G65C5IDW12G65C5IDK12G65C5IDL12G65C516AIDH16G65C5IDW16G65C520AIDH20G65C5IDW20G65C530AIDW30G65C540AIDW40G65C5开关电源系统解决方案PFC部分第五代碳化硅二极管产品目录英飞凌在PFC部分的产品CoolMOSTM碳化硅二极管开关电源系统解决方案PFC部分MOSFET/SiCCoolMOSTM系列在硬开关和软开关的应用推荐CoolMOSPositioningCPC7*C3E6CFDCFD2HardSwitchingTopologiesSoftSwitching(Resonant)Topologiesfastestswitchingseriesthebestsuitedforhighefficienthardswitchingapplicationsoriginaleaseofuseseries,suitableforhardswitching,slowerswitchingthanCPandC7soeasetohandleforEMIC3replacementseriesoptimizedforDCMapplications,improvedlowloadefficiencyoverC3originalfastbodydiodeseriessuitableforhardcommutationresonantapplicationsCFDreplacementseries,improvedlowloadefficiencyandimprovedfastbodydiodecontrolenablinglowEMIandovershootvoltageC6P6#*latestseries;betterswitchingbehaviorthanCPandthelowestRdsonisdownto19mΩinTO-247C3replacementseries,improvedlowloadefficiencyandruggedbodydiodeforuseincostsensitivesoftswitchingtopologiesaswellashardswitching#P6ownsfasterswitchingbehaviorthanC6650VC7•最低的导通电阻•最低的FOM[RDS(on)×Qg]•最快的开关性能•较CP系列更容易使用•适合高效率要求的升压变换BestinClass:IPW65R019C7IPP65R045C7开关电源系统解决方案PFC部分CoolMOSTM600VP6•低Qg和相对C6/E6系列更小的内部驱动电阻•为软开关拓扑优化开启电压•体内二极管耐用性好•更高的dv/dt•适合优化性价比的升压变换BestinClass:IPW60R041P6MeasureCPC7ImprovementCoss[pF]1606560%Eoss@400V[µJ]231250%Qg1549340%dv/dtlimit50100100%650VCoolMOS™C7C7和CP性能对比-45mOhmMeasureCPC7ImprovementCoss[pF]1606560%Eoss@400V[µJ]231250%Qg1549340%dv/dtlimit50100100%650VCoolMOS™C7C7性能:能够达到更高的效率在满载时C7在120kHz比CP在65K效率更高在满载C7在120KHz时和CP在65KHz效率更高更小的磁性器件650VCoolMOS™C7产品目录–Wave1,2&3QualificationSamplesMPWave1NowNowWave2Q32013Q42013Wave3Q42013Q12014Page17无引脚SMD能满足最高功率密度的设计小的封装(64mm²vs.150mm²forD2PAK)更薄(1.0mmvs.4.4mmforD2PAK)改善MOSFET通电性能最低的寄生电感，能降低VDS尖峰漏极面积小相对TO220封装，更小的漏极到散热器耦合电容最小的源极电感(2nHvs.6nHforD2PAK)独立驱动源连接容易用在快速开关，波形平滑动态开关时有更小的趋势在大电流应用场合下，更容易并联开关电源系统解决方案新的高压MOSFETTHinPAK8x8无引脚SMD封装分解一个MOSFET封装寄生参数–TO-220开关电源系统解决方案寄生电感和电容的影响散热性能研究:基本测试条件:拓扑:移相全桥输入电压:380VDC输出电压:53VDC最大输出功率:1600W开关频率:96kHzForinternaluseonly散热性能研究:测量结果对比开放式的结构设计相同的风速IPW65R150CFD(TO-247)&IPL65R165CFD(ThinPAK8x8)Mosfets安装在同一个散热器上2013-06-20Copyright©InfineonTechnologiesAG2013.Allrightsreserved.IPW65R150CFD(TO-247)IPL65R165CFD(ThinkPAK8x8)红外成像Ar1(超前臂上管)49.262.3°CAr2(超前臂下管)60.270.2°C开关电源系统解决方案背景英飞凌提高PFC效率方案英飞凌提高LLC效率方案低待机功耗CoolSET总结TimerICE2HS01GPG-DSO-20LOADFREQTDOCPEnAVINSVmcSRDCLSLGGNDLGSHGVCCHGCSDelayVresVref开关电源系统解决方案LLC部分ICE2HS01G开关电源系统解决方案LLC部分CoolMOSTM/OptiMOSTMNewOptiMOSTMCoolMOSTMP6/CFD英飞凌在LLC部分的产品OptiMOSTMCoolMOSTM全新CoolMOS™600VP6介绍600VP6继承了CP的性能以及C6的易用性P6是专为硬、软开关拓扑提高效率而设计，同时又容易使用对比C6/E6，更小的Qg为软开关设计优化Vth良好的体二极管耐用性优化集成的Rg提高dv