搜索
62020/7/5FSP060-2P06溫升測試Q10Mosfet的Rds(on)對溫升的影響Mosfet:STP10NK60Z10A/600V;當Vgs:10V,Id:4.5A時Rds(on):0.75ohmRjc:1.09'C/W在90Vacmaxload,inputpower:74.7W而AMB為28.9'C時溫升為:82.3'C82.3℃+1.08A2×0.75Ω×1.09℃/W+50℃-28.9℃=104.35℃Mosfet:SSP10N60B9A/600V;當Vgs:10V,Id:4.5A時Rds(on):0.80ohmRjc:0.8'C/W在90Vacmaxload,inputpower:74.8W而AMB為30.1'C時溫升為:76.2'C76.2℃+1.08A2×0.80Ω×0.8℃/W+50℃-30.1℃=96.85℃從以上結果看Rds(on)越小溫升越差實驗結果與理論推算的Rds(on)越小溫升越好的結論則剛好是相反的72020/7/5MosfetHeatsinkHS135.882.7primaryMosfetQ10(STP10NK60Z10A/600V)36.282.3ambientAMB25.728.9Q10升計算:計算方法一:82.3℃+1.08A2×0.75Ω×1.09℃/W+50℃-28.9℃=104.35℃＜150℃(Spec)OK計算方法二:82.3℃+50℃-28.9℃+(74.7W-60W)*1.09℃/W=119.423℃＜135℃(Spec150℃*90%)則OKMosfetHeatsinkHS139.689.2primaryMosfetQ10(STP10NK60Z10A/600V)36.595.1ambientAMB28.125.0Q10升計算:計算方法一:95.1℃+1.08A2×0.75Ω×1.09℃/W+50℃-25.0℃=121.05℃＜150℃(Spec)則OK計算方法二:95.1℃+50℃-25.0℃+(73.8W-60W)*1.09℃/W=135.142℃＞135℃(Spec150℃*90%)則NG13:25PMinput:265Vac/63Hz0.58A/74.3W/0.471PF14.957V/2A-14.924V/2A14:56PMinput:265Vac/63Hz0.62A/73.8W/0.445PF14.931V/2A-14.882V/2AFSP060-2P06Q10(STP10NK60Z10A/600V)溫升測試(2.23.04)265VacNO.LOCATION起始時間起始溫度℃起始參數記錄結束時間平衡溫度℃結束參數平衡溫度℃結束參數10:47AMinput:90Vac/47Hz1.39A/75.4W/0.605PF14.972V/2A-14.875V/2A13:18PMinput:90Vac/47Hz1.40A/74.7W/0.588PF14.924V/2A-14.804V/2AFSP060-2P06Q10(STP10NK60Z10A/600V)溫升測試(2.23.04)90VacNO.LOCATION起始時間起始溫度℃起始參數記錄結束時間42020/7/5EFFICIENCYTESTSPEC:75%minimum(atnominalline).Itwillbemeasuredatthemaximumload.VlineFlineLOAD+15V-15VInputPowerInputcurrentPowerFactorOutputPowerEFF.JUDGE(Vrms)(Hz)(Adc)(Adc)(W)(Adc)(PF)(W)(%)OKorNG904775.41.390.60759.7179.19OK1156073.61.160.54759.8181.26OK2405073.60.670.45259.8881.35OK2656374.20.610.45159.8780.68OK結論:按方法一計算STP10NK60Z10A/600V(1TN0001017)Mosfet可以作為FSP060-2P06中Q10的SecondSource按方法二計算STP10NK60Z10A/600V(1TN0001017)Mosfet不能作為FSP060-2P06中Q10的SecondSourcemax2252020/7/5MosfetHeatsinkHS138.472.3primaryMosfetQ10(FQP12N6010.5A/600V)38.975.5ambientAMB25.325.8Q10升計算:計算方法一:75.5℃+1.08A2×0.70Ω×0.70℃/W+50℃-25.8℃=100.27℃＜150℃(Spec)則OK計算方法二:75.5℃+50℃-25.8℃+(74.4W-60W)*0.70℃/W=109.78℃＜135℃(Spec150℃*90%)則OKMosfetHeatsinkHS148.280.6primaryMosfetQ10(FQP12N6010.5A/600V)47.989.9ambientAMB24.425.6Q10升計算:計算方法一:89.9℃+1.08A2×0.70Ω×0.70℃/W+50℃-25.6℃=114.87℃＜150℃(Spec)則OK計算方法二:89.9℃+50℃-25.6℃+(73.6W-60W)*0.70℃/W=123.82℃＜135℃(Spec150℃*90%)則OK起始時間起始溫度℃起始參數記錄結束時間平衡溫度℃16:55PMinput:265Vac/63Hz0.59A/74.1W/0.463PF14.947V/2A-14.905V/2A結束參數15:14AMinput:90Vac/47Hz1.38A/74.9W/0.596PF14.951V/2A-14.843V/2A16:50PMinput:90Vac/47Hz1.40A/74.4W/0.589PF14.925V/2A-14.804V/2A18:57PMinput:265Vac/63Hz0.62A/73.6W/0.446PF14.928V/2A-14.874V/2AFSP060-2P06Q10(FQP12N6010.5A/600V)溫升測試(2.23.04)265VacNO.LOCATIONFSP060-2P06Q10(FQP12N6010.5A/600V)溫升測試(2.23.04)90VacNO.LOCATION起始時間起始溫度℃起始參數記錄結束時間平衡溫度℃結束參數22020/7/5EFFICIENCYTESTSPEC:75%minimum(atnominalline).Itwillbemeasuredatthemaximumload.VlineFlineLOAD+15V-15VInputPowerInputcurrentPowerFactorOutputPowerEFF.JUDGE(Vrms)(Hz)(Adc)(Adc)(W)(Adc)(PF)(W)(%)OKorNG904774.91.380.60159.679.57OK1156073.61.130.55859.6981.11OK2405073.70.640.47159.7781.10OK2656374.40.580.47259.7780.33OK結論:按方法一計算STP10NK60Z10A/600V(1TN0001017)Mosfet可以作為FSP060-2P06中Q10的SecondSource按方法二計算STP10NK60Z10A/600V(1TN0001017)Mosfet可以作為FSP060-2P06中Q10的SecondSourcemax2232020/7/5MOSFET溫升測試計算方法:1.Tc+ID*ID*RDS(ON)*Rθjc+TA(MAX)-TA=TMOSFET;JUDGEPASS:TMOSFETTj.(一般性判定方法,僅計算Conductionloss,而并未考慮到Switchingloss).TC:CASETEMPERATURE;ID:MOSFETDRAINCURRENT(RMS);RDS(ON):STATICDRAIN-SOURCEONRESISTANCE;Rθjc:THERMALRESISTANCEJUNCTION-CASEMAX;TA(MAX):POWERENVIRONMENTALOPERATIONTEMPERATURERANGEMAX;TA:TESTAMBIENTTEMPERATURE;Tj:MOSFETOPERATINGJUNCATIONTEMPERATURE.2.TC+(POUT-PIN)*Rθjc+TA(MAX)-TA=TMOSFET.JUDGEPASS:TMOSFETTj*90%.(加嚴判定方法,將POWER的所有功耗皆算為MOSFET之功耗)TC:CASETEMPERATURE;POUT:OUTPUTPOWER;PIN:INPUTPOWER;Rθjc:THERMALRESISTANCEJUNCTION-CASEMAX;TA(MAX):POWERENVIRONMENTALOPERATIONTEMPERATURERANGEMAX;TA:TESTAMBIENTTEMPERATURE;Tj:MOSFETOPERATINGJUNCATIONTEMPERATURE.具体實例如下一頁:42020/7/5