2SK3747中文资料

2SK3747No.7767-1/4Features•LowON-resistance,lowinputcapacitance,ultrahigh-speedswitching.•Highreliability(AdoptionofHVPprocess).•AttachmentworkabilityisgoodbyMica-lesspackage.•Avalancheresistanceguarantee.SpecificationsAbsoluteMaximumRatingsatTa=25°CParameterSymbolConditionsRatingsUnitDrain-to-SourceVoltageVDSS1500VGate-to-SourceVoltageVGSS±20VDrainCurrent(DC)ID2ADrainCurrent(Pulse)IDPPW≤10μs,dutycycle≤1%4AAllowablePowerDissipationPD3.0WTc=25°C50WChannelTemperatureTch150°CStorageTemperatureTstg--55to+150°CAvalancheEnergy(SinglePulse)*1EAS42mJAvalancheCurrent*2IAV2A*1VDD=99V,L=20mH,IAV=2A*2L≤20mH,singlepulseElectricalCharacteristicsatTa=25°CRatingsParameterSymbolConditionsmintypmaxUnitDrain-to-SourceBreakdownVoltageV(BR)DSSID=1mA,VGS=01500VZero-GateVoltageDrainCurrentIDSSVDS=1200V,VGS=0100μAGate-to-SourceLeakageCurrentIGSSVGS=±16V,VDS=0±10μACutoffVoltageVGS(off)VDS=10V,ID=1mA2.53.5VForwardTransferAdmittance│yfs│VDS=20V,ID=1A0.71.4SStaticDrain-to-SourceOn-StateResistanceRDS(on)ID=1A,VGS=10V1013ΩMarking:K3747Continuedonnextpage.SANYOElectricCo.,Ltd.SemiconductorCompanyTOKYOOFFICETokyoBldg.,1-10,1Chome,Ueno,Taito-ku,TOKYO,110-8534JAPANOrderingnumber:ENN7767AnyandallSANYOproductsdescribedorcontainedhereindonothavespecificationsthatcanhandleapplicationsthatrequireextremelyhighlevelsofreliability,suchaslife-supportsystems,aircraft'scontrolsystems,orotherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.ConsultwithyourSANYOrepresentativenearestyoubeforeusinganySANYOproductsdescribedorcontainedhereininsuchapplications.SANYOassumesnoresponsibilityforequipmentfailuresthatresultfromusingproductsatvaluesthatexceed,evenmomentarily,ratedvalues(suchasmaximumratings,operatingconditionranges,orotherparameters)listedinproductsspecificationsofanyandallSANYOproductsdescribedorcontainedherein.81004QBTSIMTB-000000182SK3747N-ChannelSiliconMOSFETHigh-Voltage,High-SpeedSwitchingApplications2SK3747No.7767-2/4Continuedfromprecedingpage.RatingsParameterSymbolConditionsmintypmaxUnitInputCapacitanceCissVDS=20V,f=1MHz400pFOutputCapacitanceCossVDS=20V,f=1MHz85pFReverseTransferCapacitanceCrssVDS=20V,f=1MHz45pFTurn-ONDelayTimetd(on)SeespecifiedTestCircuit.12.5nsRiseTimetrSeespecifiedTestCircuit.30nsTurn-OFFDelayTimetd(off)SeespecifiedTestCircuit.152nsFallTimetfSeespecifiedTestCircuit.45nsTotalGateChargeQgVDS=200V,VGS=10V,ID=2A37.5nCGate-to-SourceChargeQgsVDS=200V,VGS=10V,ID=2A2.7nCGate-to-Drain“Miller”ChargeQgdVDS=200V,VGS=10V,ID=2A20nCDiodeForwardVoltageVSDIS=2A,VGS=00.881.2VNote)Althoughtheprotectiondiodeiscontainedbetweengateandsource,becarefulofhandlingenough.PackageDimensionsunit:mm2076BSwitchingTimeTestCircuitUnclampedInductiveTestCircuit1:Gate2:Drain3:SourceSANYO:TO-3PML16.02.02.81.04.021.05.08.022.020.45.63.12.02.00.65.455.451233.53.4PW=10μsD.C.≤0.5%P.GRGS=50ΩGSDID=1ARL=200ΩVDD=200VVOUT2SK3747VIN10V0VVIN50Ω≥50ΩDUTVDDL10V0V2SK3747No.7767-3/4Drain-to-SourceVoltage,VDS--VDrainCurrent,ID--AGate-to-SourceVoltage,VGS--VDrainCurrent,ID--AStaticDrain-to-SourceOn-StateResistance,RDS(on)--ΩStaticDrain-to-SourceOn-StateResistance,RDS(on)--ΩCaseTemperature,Tc--°CDrainCurrent,ID--AForwardTransferAdmittance,│yfs│--SDiodeForwardVoltage,VSD--VForwardDrainCurrent,IF--ADrainCurrent,ID--ASwitchingTime,SWTime--nsGate-to-SourceVoltage,VGS--VID--VDSID--VGSRDS(on)--VGSRDS(on)--TcSWTime--IDIF--VSD│yfs│--IDDrain-to-SourceVoltage,VDS--VCiss,Coss,Crss--pFCiss,Coss,Crss--VDSIT07130IT07131IT07132IT07133--50--250255075100125150004.03.53.02.52.01.550454010305251520351.00.5003.02.52.01.520181641221068141.00.510V8V030251020155VGS=4V5V6VIT07136IT071350.20.40.60.81.21.00.010.11.010753275327532IT0713425°C--25°CTc=75°C0.13572357231.01.023572350.1VDS=20V25°CTc=--25°C75°CVGS=0ID=1AVGS=10V1001032325570.11.0235723VDD=200VVGS=10Vtd(off)tftrtd(on)0710010100075532532325030515202535404510IT07137f=1MHzCissCossCrssTc=--25°C25°C75°C00302520152018164122106814105ID=1ATc=75°C25°C--25°CTc=25°CpulseVDS=20Vpulse2SK3747No.7767-4/4PSSpecificationsofanyandallSANYOproductsdescribedorcontainedhereinstipulatetheperformance,characteristics,andfunctionsofthedescribedproductsintheindependentstate,andarenotguaranteesoftheperformance,characteristics,andfunctionsofthedescribedproductsasmountedinthecustomer’sproductsorequipment.Toverifysymptomsandstatesthatcannotbeevaluatedinanindependentdevice,thecustomershouldalwaysevaluateandtestdevicesmountedinthecustomer’sproductsorequipment.SANYOElectricCo.,Ltd.strivestosupplyhigh-qualityhigh-reliabilityproducts.However,anyandallsemiconductorproductsfailwithsomeprobability.Itispossiblethattheseprobabilisticfailurescouldgiverisetoaccidentsoreventsthatcouldendangerhumanlives,thatcouldgiverisetosmokeorfire,orthatcouldcausedamagetootherproperty.Whendesigningequipment,adoptsafetymeasuressothatthesekindsofaccidentsoreventscannotoccur.Suchmeasuresincludebutarenotlimitedtoprotectivecircuitsanderrorpreventioncircuitsforsafedesign,redundantdesign,andstructuraldesign.IntheeventthatanyorallSANYOproducts(includingtechnicaldata,ser