MT29F8G08ABABAWP-IT

NANDFlashMemoryMT29F8G08ABABA,MT29F8G08ABCBBFeatures•OpenNANDFlashInterface(ONFI)2.1-compliant1•Single-levelcell(SLC)technology•Organization–Pagesizex8:4320bytes(4096+224bytes)–Blocksize:128pages(512K+28Kbytes)–Planesize:2planesx1024blocksperplane–Devicesize:8Gb:2048blocks•SynchronousI/Operformance–Uptosynchronoustimingmode4–Clockrate:12ns(DDR)–Read/writethroughputperpin:166MT/s•AsynchronousI/Operformance–Uptoasynchronoustimingmode4–tRC/tWC:25ns(MIN)•Arrayperformance–Readpage:25µs(MAX)–Programpage:230µs(TYP)–Eraseblock:700µs(TYP)•OperatingVoltageRange–VCC:2.7–3.6V–VCCQ:1.7–1.95V,2.7–3.6V•Commandset:ONFINANDFlashProtocol•AdvancedCommandSet–Programcache–Readcachesequential–Readcacherandom–One-timeprogrammable(OTP)mode–Multi-planecommands–Multi-LUNoperations–ReaduniqueID–Copyback•Firstblock(blockaddress00h)isvalidwhenship-pedfromfactory.ForminimumrequiredECC,seeErrorManagement(page94).•RESET(FFh)requiredasfirstcommandafterpow-er-on•Operationstatusbyteprovidessoftwaremethodfordetecting–Operationcompletion–Pass/failcondition–Write-protectstatus•Datastrobe(DQS)signalsprovideahardwaremeth-odforsynchronizingdataDQinthesynchronousinterface•Copybackoperationssupportedwithintheplanefromwhichdataisread•Qualityandreliability–Dataretention:10years–Endurance:100,000PROGRAM/ERASEcycles•Operatingtemperature:–Commercial:0°Cto+70°C–Industrial(IT):–40ºCto+85ºC•Package–48-pinTSOP–100-ballBGANote:1.TheONFI2.1specificationisavailableat:09005aef8386131bM61A_8Gb_AsyncSync_NAND.pdf-Rev.D10/12EN1MicronTechnology,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.©2009MicronTechnology,Inc.Allrightsreserved.ProductsandspecificationsdiscussedhereinaresubjecttochangebyMicronwithoutnotice.PartNumberingInformationMicronNANDFlashdevicesareavailableindifferentconfigurationsanddensities.VerifyvalidpartnumbersbyusingMicron’spartcatalogsearchat:PartNumberingMT29F8G08ABABAWPITES:BMicronTechnologyNANDFlash29F=NANDFlashmemoryDensity8G=8GbDeviceWidth08=8bitsLevelBit/CellA1-bitClassificationDie#ofCE##ofR/B#I/OB111CommonOperatingVoltageRangeA=VCC:3.3V(2.7–3.6V),VCCQ:3.3V(2.7–3.6V)C=VCC:3.3V(2.7–3.6V),VCCQ:1.8V(1.7–1.95V)GenerationFeatureSetB=SecondsetofdevicefeaturesDesignRevisionB=SecondrevisionProductionStatusBlank=ProductionES=EngineeringsampleSpecialOptionsBlankX=Productlongevityprogram(PLP)OperatingTemperatureRangeBlank=Commercial(0°Cto+70°C)IT=Extended(–40°Cto+85°C)SpeedGrade(synchronousmodeonly)-12=166MT/sPackageCodeH1=100-ballVBGA12mmx18mmx1.0mm1WP=48-pinTSOP1(CPL)InterfaceA=AsynconlyB=Sync/AsyncNote:1.Pb-freepackage.MicronConfidentialandProprietary8GbAsynchronous/SynchronousNANDFeaturesPDF:09005aef8386131bM61A_8Gb_AsyncSync_NAND.pdf-Rev.D10/12EN2MicronTechnology,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.©2009MicronTechnology,Inc.Allrightsreserved.ContentsGeneralDescription.........................................................................................................................................9SignalAssignments.........................................................................................................................................10PackageDimensions.......................................................................................................................................12Architecture...................................................................................................................................................14DeviceandArrayOrganization........................................................................................................................15BusOperation–AsynchronousInterface.........................................................................................................17AsynchronousEnable/Standby...................................................................................................................17AsynchronousBusIdle...............................................................................................................................17AsynchronousCommands..........................................................................................................................18AsynchronousAddresses............................................................................................................................19AsynchronousDataInput...........................................................................................................................20AsynchronousDataOutput.........................................................................................................................21WriteProtect..............................................................................................................................................22Ready/Busy#..............