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群联电⼦子股份有限公司
PhisonElectronicsCorp.PHISON’spresentationcontainsforward-lookingstatementssubjecttosignificantrisksanduncertainties.Actualresultsmaydiffermateriallyfromthosecontainedintheforward-lookingstatements.InformationastothosefactorsthatcouldcauseactualresultstovarycanbefoundinPHISON’sannualreportsandotherdocumentsfiledfromtime-to-timewiththeTWSE.Exceptasrequiredbylaw,weundertakenoobligationtoupdateanyforward-lookingstatement,whetherasaresultofnewinformation,futureevents,orotherwise.D-U-N-S:65-802-3291Confidentialn NAND Flash应用供应商 n 同时具备IC设计和系统整合能力 n 成立时间:2000年11月 n 总部:台湾, 竹南       (距新竹科学园15分钟车程) n Phison  = “Five-Person”,由五位Flash研发经验超过14年专业人士创立 n 员工人数:808人 (R&D 485,占60%) PhaseI(2008)PhaseII(2012)公司概况Confidential全球布局滨城,⻢马来⻄西亚圣荷⻄西,美国深圳,中国新⽵竹,台湾(总部)东京,⽇日本总部/分公司技术⽀支援团队销售和代理商据点北美洲美国南美洲巴西欧洲法国,德国,意大利,饿罗斯,英国亚洲中国,印度,日本,韩国,马来西亚,台湾Confidential时间大事记05.2001研发出全球第一颗单芯片USB快闪存储主控PS1001,随后发布USB快闪存储器并命名为Pen DriveTM 。尔后“ Pen DriveTM ”成为USB快闪存储器随身碟的同义词 04.2002Toshiba与M-Systems(现已被SanDisk收购)投资群联  09.2004开发出 SD/MMC 记忆卡主控芯片 12.2004股票正式在台北交易所上柜 05.2006与Intel, Micron, Sony, Hynix与ST共同成立Open NAND Flash Interface (ONFI)组织,并担任董事成员,为创立者中唯一的控制IC厂商 06.2008获Kingston及Hynix两大厂商投资 01.2009与 Nokia, Motorola, Canon, NEC, HP, Sharp 等公司共同获选为SD协会董事 05.2009eMMC 主控广为 NAND Flash 制造商采用并设计进国际品牌智能手机和车载设备中 05.2010在 Bloomberg Business Week 《彭博商业周刊》所选出的全世界科技百强中排名第65位  10.2011SATA主控PS3105 design-win全球第一款超极本 12.20112011年主控芯片出货量达5.56亿颗 12.20122012年主控芯片出货量6.79亿颗 11.2013PS3109SATANGFFSSD在国际品牌的Chromebooksdesign-wins公司里程碑Confidential020040060080010001200425741191923786305757501,0071,1001,1181,085523US$m公司营收Confidential系统整合OEM/ODMIC设计完整解决⽅方案n 群联知道您需要什么      从Nand Flash到终端产品  n  为了您的产品快速上市       我们准备好了所有必要条件  n 满足您一站式采购需求     从Flash到Controller到成品全系列  n 多元化的弹性与服务 提供多元化服务和⽣生意上的完美弹性n NO OWN BRAND finish Product 不与客戶做竞争,不做自有品牌成品. 群联集合产业所需的资源 核⼼心价值=“ATotalSolutionProvider”完整⽅方案提供商Confidential*UpdatedJul2014地区审核中已核准Taiwan184251China228177USA162200Others229Total576657LBAtoPBAmappingtoimproveRandomWritePerformanceandmaximizeDeviceLifeTimeSolvetheproblemofaccumulatederrorintroducedbyCopyBackoperationSmartcardtechnologyembeddedMobileSecurity6,490,1636,724,6806,792,5016,876,5796,880,0246,916,2087,187,5837,206,8937,222,2117,225,2917,243,1867,259,9887,263,6497,276,8897,319,3607,376,7817,649,7947,822,9127,840,7457,949,9298,037,2338,055,8378,103,820…..FlashmanagementforeMMCProductstosupportnewNANDFlasharchitectureandtoimproveperformanceDataIntegrityofMLClargeblockNAND.Improveperformanceofpartialpageprogramming公司专利U盘主控ConfidentialControllerTimeline2014Q32014Q42015Q12015Q2PS2251-68(USB2.0,1CH)PS2251-01(USB3.0,4or8CH)Upto1TBHighDensity,MLCMaxR/W230/170PS2251-03(USB3.0,2CH)MLCMaxR/W190/140MB/s,TLCMaxR/W140/35MB/sPS2251-06(USB3.0,1CH,LDPCECC)For20nmTLC,15nmTLCPS2251-07(USB3.0,1CH)MLCMaxR/W250/80MB/s,TLCMaxR/W200/25MB/sPS2251-08(USB3.0,2CH,HighSpeed)MLCMaxR/W400/320MB/s,TLCMaxR/W350/50MB/sPS2251-12(USB3.0,2CH,WTG)2-CHeMMCReader(HS-200),MaxR/W280/85MB/sESMPUSB2.0/3.0主控ConfidentialControllerPS2251-68PS2251-01PS2251-03PS2251-06PS2251-07PS2251-08InterfaceUSB2.0USB3.0USB3.0USB3.0USB3.0USB3.0Process0.11um90nm55nm55nm55nm55nmPackageLQFP-48BGA-289TQFP-48/64TQFP-48/64TQFP-48/64TQFP-64/80Max#ofCE(ChipEnable)416/3284416ECC72-BitBCH68-BitBCH72-BitBCHLDPC72-BitBCH72-BitBCHOscillatorBuilt-InExternalBuilt-InBuilt-InBuilt-InBuilt-In#ofChannels14/82112Toshiba19nmMLCOOOO*19nmTLCOOO*A19nmMLCOOOO*A19nmTLCOOO*15nmMLC****15nmTLC****IntelMicron25nmMLC(L7x)OOOO*25nmTLC(B7x)OO20nmMLC(L8x)OOOO*20nmTLC(B85T)O16nmMLC(L9x)OOO*SKHynix20nmMLCOOO*16nmMLCOOO*16nmTLC**Samsung21nmMLCOO*21nmTLCOO**FirmwareunderdevelopmentU盘主控⽀支持的闪存ConfidentialControllerTimeline2014Q32014Q42015Q12015Q2PS2251-13(AES)On-the-FlyAES256/SHA256/RSA2048/RNG2-ChanneleMMCReader(HS-200)PS2251-15(FIPS)On-the-FlyFIPS140-2Level3AES256/SHA256/RSA2048/RNG2-ChanneleMMCReader(HS-200)PS2251-16(FIPS&SmartCard)On-the-FlyISO-7816SmartCardI/FFIPS140-2Level3AES256/SHA256/RSA2048/RNG2-ChanneleMMCReader(HS-200)USBAES/Smart加密主控芯⽚片ESMPSD卡,eMMC&UFS主控ConfidentialControllerTimeline2014Q32014Q42015Q12015Q2PS8035(SD3.0,UHS-I,1CH)StandardPerformance,Class10MLC/TLCPS8210(SD3.0,UHS-I,2CH)HighPerformanceMLCMaxR/W90/80MB/sPS8037(SD3.0,UHS-I,1CH)Cost-DownofPS8035,SmallDensityMLC/TLCPS8039(SD3.0,UHS-I,1CH)TLCMaxR/W80/30MB/s,15nmMLC/TLCPS8036(SD4.0,UHS-II,1CH)FD156/HD312,pSLCMaxR/W280/250MB/sSD/microSD卡主控ESMPConfidential*FirmwareunderdevelopmentControllerPS8035PS8210PS8037PS8039PS8036InterfaceSD3.0(UHS-I)SD3.0(UHS-I)SD3.0(UHS-I)SD3.0(UHS-I)SD4.0(UHS-II)CardFormFactorSD/microSDSD/microSDSD/microSDSD/microSDSDProcess55nm55nm55nm65nm55nmPackageDie,LGA-51Die,LGA-51DieDieDieECC72-BitBCH72-BitBCH72-BitBCH72-BitBCH72-BitBCH#ofChannels12111Toshiba19nmMLCOOO**19nmTLCOOO*A19nmMLCOOO**A19nmTLCOOO*15nmMLC**15nmTLC*IntelMicron25nmMLC(L7x)OOO*20nmMLC(L8x)OOO**16nmMLC(L9x)O*SKHynix20nmMLCOOO*16nmMLCOOO**16nmTLC**Samsung21nmTLCO*SD/microSD主控支持的闪存ConfidentialeMMC&UFS主控ControllerTime

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