MEMS-原理与器件

pMEMS——pMEMSppMEMSp(ScalingDown)p¤¤(¤¤……..ppp3201pppL.Jianget.al,nature,2004p¤p¤p¤¤S/Vp~()2S~l2p~()3V~l3p~()2/3S~V2/3p¤1000100pS/V=10-4/mm/gL1L2L3S/V=10-1/mm——ppp1µm30m.rg(pr2h)=2prgcosq——p¤electrowetting)://¤l2¤l-63222()()sMFMalltt-==µ3GMgl=µpp¤¤¤334EWHklL=103kllmlw-==324bkTfalm-D=Fkx=001122kfmwpp==11400µm5µm2µm25µm0.5µm10nm10-18kg2.33g/cm3,160GPa1pp¤¤¤~VEdl=PaschenCurveinAirVBreakdownVoltageVPressurexdistancePXd(mmHg-mm)At1atmosphere=760mmHg002004006008001000120014001020304022.6µm13.16µmNewPhysicsandChemistrydAF.Paschen,1889Wied.Ann37,pp.69-96ppp0~rWLQClVdee==220122rWLUCVVdee=-=-22021122rdWLUCFVVdddee¶¶==-=-¶¶dAvFdFwFLWL~l0orl2pppp¤p221122ULiLF=-=-212dULFixx¶¶==-¶¶~l4()LSVmLL2L3ρVLL2L3L3ρ:fpfgfifffemgm(d2x/dt2)uS/d(dx/dt)eS(ΔL/L)L2L3L4L2L2p:S:gx:t:u:d:e:KωIDamr2(m/K)1/2fi/ffLL-1L5L2L2U:a:r:QcQtQrλΔTA/dhΔTSCT4SL(L2)L2L2ΔT:λ:A:h:C:FeFmFTεSE2/2μSH2/2eSΔL(T)/LL0L4L2ε:Eμ:Hpp¤Dxn¤NNfxxfyD¶¶+D¶¶=D0yxy=kx+b()max/100%LFSLyg=±D´¤¤DNn¤nn¤¤0=¶¶Nf0fSCx¶==¹¶ppp0()ayxt=)(01111txyadtdyadtydadtydannnnnn=++++---L)(01txyadtdya=+dmytaxty+--=)]/exp(1[)(0tpp22102()dydyaaayxtdtdt++=bay2222dydydxmbkymdtdtdt++=-0()sin()xtxtw=0()sin()ytytwf=-()020222001yxQ=æö×-+ç÷èømk=20w0mQbw×=Q0122bQmxw==Frequencywn1.0AmplitudeDecreasingDampingp¤p¤p¤p¤nn¤nnppe0QCVCf()[]fiCACQe++=1ACQefi=1AfioCQAee-=-=pp¤¤¤¤FKQp=-FF+++++----+-F++++----Oxygen(-)Silicon(+)121111213141516322122232425264331323334353656qddddddqddddddqddddddsssssséùêúêúéùéùêúêúêú=êúêúêúêúêúêúëûëûêúêúêúëû3311,maxqds=FKQp=ppAlRr=dRdLdAdRLArr=-+prefxxreffoutRRRVV+=]4[56xVRRVrefout-=Whenx1)1(0xRRx+=p¤p¤RLARLArrDDDD=-+e0KRR=Dpp¤pDDrrpspep==EELLp¤p¤¤Ra])[1(00TTRRRT-+=a——p¤p¤1-5%¤nnHDDppp¤¤¤Åp¤¤ssddCdAddCAdee=+-dACsee0=dAsex0i0CCuu-=pp¤¤¤ppDddpCCCddd00+=-DDDDDDDCCdddddddd0231=++æèçöø÷+æèçöø÷+éëêêùûúúLdADDCCdd0»0sACdee=——C0=125fF——0zyVVV=´00sinvVtw=00sinvVtw=0sinaaatw=Aa00sinmvVtw=v0ppp00CxCxD=x0tdp)11()(CC21212101212211BAeeeeeee+-+=+-++=+=ddlxCddxlbddbxCh2pdAsep——pHarveyNathansonandWilliamNewell,surface-micromachinedresonantgatetransistor,196551pp(Accelerometer)¤p(Gyroscope)¤¤(Angularratesensors)p(IMU)MEMS52pppppp•••••pF=ma2dxdxmbkxmadtdt++=1g1ug0.1mg1mg,,55p:2-4μm(ADI)pEpi-Poly:5-40μmSTMicroelectronics57pSOI:10-100μmMEMSCapTronics58pSOG(a)(b)(c)(d)(a)(b)(c)(d):5-100μmDraper,HoneywellPKU,UmichpCMUADIInvensenseADI60p¤p¤Foundry¤ppppp­­¤­¤¯¤­¤­p­¤­¤¯¤p­p­p­p¯ADISpringAnchorProofMassxyAbdolvand,etal.,JMEMS2007p¤1+1+1¤2+1¤3p¤Z¤¤ADI,ADXL345200919780.01gp¤¤colibrys0.02mg73p1851p185274p文文文文文文文文ID文rId4文文文文文文75p76p(Coriolis)V𝝮77o/sqt(h)0.50.5-0.050.001o/h10-10000.1-100.01o/sec50-10005004001msg10001000-100001000Hz70~100~1007879——p¤ABS¤¤MIMUp¤p¤p¤p¤¤MIMUMEMS81p¤¤¤¤¤¤nmg100000gn0.0001o/h1000o/sQRS-11GeophoneMEMS822sinyyxxmycykymxmxcxkxFtw·······++=W++=ý8384=Wæö-+ç÷ç÷èøýýwwD=D54.0swwDW=85p¤¤Coriolis90degpCoriolis¤¤CoriolisdpcQFFaw02W=sqcQBBew02W£Q86ýQýQèèw=WQ87pQ¤QnQ50,000¤n¤p¤¤¤p¤¤¤¤¤888990p¤Kx≈Ky¤Samsung,1999PKU,199991p¤¤Japan,Mochidaetal,200092p¤¤Germany,Geigeretal,200293p¤¤¤94p¤¤¤CMU,1997Turkey,METU,2001Turkey,METU,2007PKU,2008951988Draper(4o/s)ýèè96ýèJPLBoeing,UCLADrift0.1o/h,200197ýèGermany,Geigeretal,200298ýBEIDaimlerChrysler99pDraperpHoneywell2010Biasinstability:0.03o/hr100ppBosch101Biasinstability:0.15o/hrSOIGatech,2008102Biasinstability:0.88o/hrUCI,2011SOI103ýýýPKU,2009XLateralcombdrive2DoFproof-mass1Dsensingbeam1Ddrivingbeam1DverticalsensingcombZY104pADI¤iMEMS105pSTMicroelectronics¤106pInvensense¤¤6MIMU2010107pSensorDynamics(Maxim)¤32010108pSensonor¤SAR500:0.02o/hDrivemodeSensemode109pMEMS—¤pMEMS—¤pMEMS—¤pMEMS—¤110p(AGC)+VdcFelRAKvfRectifierLPFeC(s)´dxdt´22nddndd11ωms+s+ωQ&xKcvKdcαs+λGElectronicspartMechanicalpartControllerC/VconverterVoltagetoForce+FnxCV111p(CSA)112pTHUp114