LDMOS的技术和应用

ShekarMAlpha&OmegaSemiconductorInc.1LDMOS–TechnologyandApplicationsShekarMallikarjunaswamyTechnology.Innovation.PoweringtheFuture.ShekarMAlpha&OmegaSemiconductorInc.2OutlineŒPowerManagementMarketDriversŒLDMOSTechnologyInnovationsƒStructure,FOMs;Planar,Trench,RESURFŒTCADSimulations;DeviceLayouts;SPICEModelsŒProcessIntegration–CMOS/BCDPlatformsŒReliabilityImprovements–HCIandESDŒApplications–DC-DC,LED,Hot-swap,BatteryProtectionŒSummaryandFutureTrendsShekarMAlpha&OmegaSemiconductorInc.3$0B$5B$10B$15B$20B$25B$30B2007200820092010201120122013Sources:IMSJuly2010DiscreteReport(StandardMOSFETs,IGBTs,IGBTModules),IMS2007PowerICReport&April2009updatePowerManagementMarketGrowth&KeyDriversTAMEnablingEfficientConversion,RegulationandUtilizationofPowerShekarMAlpha&OmegaSemiconductorInc.4PowerICTAM($M)$0M$2,000M$4,000M$6,000M$8,000M$10,000M$12,000MSumofTAM$$8,068$8,635$8,874$8,382$9,181$9,739$10,245$10,58420062007200820092010201120122013PowerICTAM-Consumer($M)$0M$500M$1,000M$1,500M$2,000M$2,500M$3,000M$3,500MTAM$$2,279$2,455$2,539$2,404$2,646$2,763$2,849$2,89320062007200820092010201120122013PowerICTAM-Computing($M)$0M$200M$400M$600M$800M$1,000M$1,200M$1,400M$1,600M$1,800MTAM$$1,416$1,501$1,507$1,455$1,488$1,573$1,668$1,70520062007200820092010201120122013PowerICTAM-Communications($M)$0M$500M$1,000M$1,500M$2,000M$2,500M$3,000M$3,500M$4,000M$4,500M$5,000MTAM$$2,897$3,165$3,278$3,104$3,529$3,825$4,089$4,33420062007200820092010201120122013PowerIntegratedCircuit-TAMShekarMAlpha&OmegaSemiconductorInc.5OutlineŒPowerManagementMarketDriversŒLDMOSTechnologyInnovationsƒStructure,FOMs;Planar,Trench,RESURFŒTCADSimulations;DeviceLayouts;SPICEModelsŒProcessIntegration–CMOS/BCDPlatformsŒReliabilityImprovements–HCIandESDŒApplications–DC-DC,LED,Hot-swap,BatteryProtectionŒSummaryandFutureTrendsShekarMAlpha&OmegaSemiconductorInc.6LDMOS–Structures–LVandHVLowVoltage(30V)BPSubstrateN-DRIFT1P-BODYDSP+N-EPIN+GN+NBLN-DRIFT2BPSubstrateN-DRIFTP-BODYDSP+N/P-EPIN+GN+NBLHighVoltage(30V)•LowCgd(RFAppl.)•HigherHCIRisk•Isolated/Non-IsolatedSelfAlignedS/BImplant1stSub-micronChannelVthigherthanCMOS•HigherCgd•LowerHCIRisk•Isolated/Non-IsolatedLateralDiffusedMOS(LDMOS)ShekarMAlpha&OmegaSemiconductorInc.7LDMOS–FigureofMerit(FOM)LowSpecificResistanceRDS-ALowCapacitanceCgdCgs;CdsSOAElectricalThermalHCIESD/EOS•ChannelDensity•DrainEngineering•Back-end(package)•NewMaterials(GaN,SiC)•ShieldedGate•RESURF,SJ•NewMaterials(GaN,SiC)•DrainEngineering•Back-end•Circuit•NewMaterials(GaN,SiC)ShekarMAlpha&OmegaSemiconductorInc.8Short-termandLong-termSOATI,IRPS’05LDMOS–FOM(cont’d)ShekarMAlpha&OmegaSemiconductorInc.9LDMOS–FOM(cont’d)TI,ISPSD’05ElectricalandThermalSOA•CriticalElectricField(Ec)andCriticalTemperature(Tcrit)determineElectricalandThermalSOA•ImprovedThermalSOA:PlatedCumetallization;3DcoolingImpactIonizationThermalGenerationShekarMAlpha&OmegaSemiconductorInc.10LDMOS–ChannelEngineering(cont’d)STM,ISPSD’96LargeAngleTiltImplantLDMOS(LATID)•Lowthermalbudgetsub-micronprocesscompatible•ShadowingandLDMOSruggednessissues•0.6umBCDwithFlashMemoryShekarMAlpha&OmegaSemiconductorInc.11LDMOS–Channel/DrainEngineering(cont’d)Toyota,ISPSD’983-DLateralPowerMOSFET•DoubleGateusingSolidPhaseEpitaxy–SOIType•TrenchGateandDrain(NoJFET)•50VBV;42mOhm-mm^2ShekarMAlpha&OmegaSemiconductorInc.12LDMOS–Channel/DrainEngineering(cont’d)Toshiba,ISPSD’0020VLDMOSMOSFET•TrenchTerraceandSidewallchannelcurrentflow•TrenchGate(W=3.5xplanar)andDrain(0.6umCMOS)•25VBV;7.8mOhm-mm^2ShekarMAlpha&OmegaSemiconductorInc.13LDMOS–ChannelEngineering(cont’d)Fraunhofer,ISPSD’10PlanarLDMOSwithTrenchGate•Rdsreductionby49%withTrenchgate•CurrentspreadingintobulkreducesRds-on•EaseofintegrationintoplanarRESURF(buriedP-well)ShekarMAlpha&OmegaSemiconductorInc.14LDMOS–DrainEngineering(cont’d)Toshiba,ISPSD’98AdaptiveRESURFLDMOS•AdditionalResurfoverconventionallayer•HighstaticBVwithimprovedFB-SOA•28VBV;17.7mOhm-mm^2ShekarMAlpha&OmegaSemiconductorInc.15LDMOS–DrainEngineering(cont’d)Motorola;Freescale,ISPSD’04;07DoubleandFloatingRESURF(FRESURF)LDMOS•DoubleRESURF(NBL=D);FRESURF(NBL=Float)•DeviceBV,Rds-onandSOAdependenceondesignrules•0.25umSmartPower–HighSideLDMOSShekarMAlpha&OmegaSemiconductorInc.16LDMOS–DrainEngineering(cont’d)Cambridge,ISPSD’09SingleandDoubleRESURFLDMOS•sRon~BV^2.5(Baliga’sPowerLaw)•sRon~3.7BV^2.5(SingleRESURF)•sRon~5.8BV^2.33(DoubleRESURF)•sRon~32BV^2(TripleRESURF)[Powerlawbasedontwotechnologydependentparametersα,β]ShekarMAlpha&OmegaSemiconductorInc.17LDMOS–Channel/DrainEngineering(cont’d)AMI,IEDM’06XtreMOS–Transistorin0.35umCMOS•N-Polyfilledtrench;LOCOS(0.6um);500AngGate•Hexagonalcells;stressreductionofdriftresistance(20%)•94VBV;30mOhm-mm^2100;BLN~12–2.6ohm/sqShekarMAlpha&OmegaSemiconductorInc.18LDMOS–DrainEngineering(cont’d)UT,ESSDRC’04SuperJunctionandBackEtchedSuperJunctionLDMOSonSOI•ConventionalSJLDMOS–substratedepletioneffectisovercomebyBackEtchedSJLDMOS•Pillarsgrownusingselectiveepitaxial;IonImplantation(0.8umSithickness,2E16/cm^3,1.2umpillars)ShekarMAlpha&OmegaSemiconductorInc.19LDMOS–Ron*Qgreduction(cont’d)IE