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Oct.2010117AdvancedDisplayIGZO1，1，1，1，2，1（1.TFT-LCD，100176；2.，271021）：，IGZO，、、，。IGZO，IGZO，IGZO。：；；；：TN383.+1：BTheRecentResearchProgressofAmorphousIndiumGalliumZincOxideThinFilmTransistorsLIUXiang1,XUEJian-she1,JIAYong1,ZHOUWei-feng1,XIAOJing2,CAOZhan-feng1,(1.TFT-LCDDevice&MaterialTechnologyResearchCenter,BOETechnologyGroupCo.,Ltd.,TechnologyResearchInstitute,Beijing100176,China;2.PhysicsandElectronicEngineeringCollege,TaishanUniversity,TaianShandong271021,China)Abstract:Recently,amorphousindiumgalliumzincoxidethinfilmtransistors(a-InGaZnOTFT)haveattractedconsiderableattentionfortheiroutstandingmerits,suchashighmobility,goodstabilityandsimplefabricationprocess.Thisarticlereviewsthedevicestructure,advantagesanddisadvantagesofa-IGZOTFT.Wealsosummarizetheimpacta-IGZOTFTperformancefactors.Inaddition,thenewmethodsofdevelopinghighperformanceandstabilitya-IGZOTFTareproposed.Keywords:thinfilmtransistor;IGZO;oxide;devicestructure：2010-09-10：IGZO28Oct.2010117AdvancedDisplay0.580in120Hz1cm2/V·s。1[1-3]IGZOTFT、、、[4-11]。1IGZOIGZOIn2O3、Ga2O3ZnO3.5eVN。In2O3In3+5S35cm2/V·sGa2O3OZnOZn2+IGZO。IGZO。1.1IGZO。2008SIDIGZO[12]IGZO420nmIGZOTFTI-V420nmIGZOI-V。IGZOIGZOI-V。2010LGSIDIGZO[13]IGZO4,500nitI-VI-VIGZO90%。1.2IGZOTFT。2010SID[14]40mmIGZOIon、IoffIgs。1.3IGZOTFT。2010IGZO[15]IGZOTFT、IGZOIGZOIGZO。IGZOIGZO1、IGZOIGZO~250℃~500℃RT~350℃(cm2/V·s)150~2001~50Ids=3μA,30khr30V0.5V1VLCD/OLEDLCD/OLEDLCD/OLED/E-Paper////：IGZO29Oct.2010117AdvancedDisplay2、IGZOIGZOIGZOTFTIGZO。1.4IGZO。2009IDWIGZO[16]IGZO50μmIGZOIn、Ga、Zn1μm50μmIGZOTFTI-VIGZO。IGZOH2SO4、H3PO4H2O2[17]IGZO。2IGZOTFTIGZOTFTetchstoptype、backchanneletchtypecoplanartype2。IGZOTFTIGZOIGZOIGZOTFTIGZOTFT。SiNxSiOx。201011.7in[18]。[19]IGZOTFT。IGZOIGZOIGZOTFT。2009SemiconductorEnergyLaboratorySID4inIGZOTFT[20]：IGZO30Oct.2010117AdvancedDisplay。IGZOTFTIGZOIGZOIGZOTFTIGZOTFT。2010SID632in[21]。3IGZOTFTIGZOIGZOIGZO。IGZOTFTTFT、IGZO、IGZO、IGZO。IGZOTFTIGZOTFTIGZOIGZOTFT。IGZOTFT。IGZOTFT。IGZOIGZOTFT。SiNx[22]、SiOx[23]Al2O3[24]IGZOIGZO。IGZOIGZO。IGZOIGZOTFTIGZO。IGZOTFTIGZO。4IGZOTFT、IGZO、IGZOIGZOTFT201032inIGZOTFTIGZO5.16cm2/V·s1.8×1080.5V0.38V/dec。IGZOIGZOTFT、、、。[1]T.Sameshima,S.Usui,M.Sekiya.XeClExcimerlaserannealingusedinthefabricationofpoly-SiTFT's[J].IEEEElectronDeviceLett,7,276(1986).[2]DongHanKang,JaeHwanOh,MiKyungPark,etal.Active-matrixOrganicLightEmittingDiodeusingInverseStaggeredPoly-SiTFTwithaCenter-offsetGatedStructure[J].SIDSymposiumDigest,92-95(2009).[3]ToshihiroKugimiya,YoichiroYoneda,EisukeKusumoto,etal.SingleLayerAl-Ni-La-SiInterconnectionsforSourceandDrainofLTPSTFTLCDsUsingDirectContactswithbothITOandpoly-Si[J].IDWSymposiumDigest,329-332(2008).[4]HaiQ.Chiang,BrianR.McFarlane,DavidHong,etal.Processingeffectsonthestabilityofamorphousindiumgalliumzincoxidethin-filmtransistors[J].J.Non-Cryst,：IGZO31Oct.2010117AdvancedDisplaySolid352851-854(2006).[5]HideoHosono.Ionicamorphousoxidesemiconductors:Materialdesign,carriertransport,anddeviceapplication[J].J.Non-Cryst,Solids352,851(2006).[6]Jun-HyunPark,KichanJeon,SangwonLeeA,etal.ExtractionofDensityofStatesinAmorphousGaInZnOThin-FilmTransistorsbyCombininganOpticalChargePumpingandCapacitance-VoltageCharacteristics[J].IEEE,1292-1295(2007).[7]K.Nomura,H.Ohta,A.Takagi,etal.Room-temperatureFabricationofTransparentFlexibleThin-film-transistorsUsingAmorphousOxideSemiconductors[J].Nature432,488-492(2004).[8]K.Nomura,H.Ohta,A.Takagi,etal.Thin-FilmTransistorFabricatedinSingle-CrystallineTransparentOxideSemiconductor[J].SCIENCE3001269-1272(2003).[9]Byoung-SeongJeong,Chang-MoPark,Mu-GyeomKim,etal.EffectofPassivationLayerPropertiesonthePerformanceofOxideTFTs[J].IMIDSymposiumDigest,1040-1043(2009).[10]KeunWooLee,HyunSooShin,KonYiHeo,etal.LightEffectsofamorphousindiumgalliumzincoxidethin-filmtransistor[J].IMIDSymposiumDigest,531-534(2009).[11]J.K.Jeong,J.H.Jeong,J.H.Choi,etal.12.1-In.WXGAAMOLEDDisplayDrivenbyIndium-Gallium-ZincOxideTFTsArray[J].SIDSymposiumDigest,39,1-4(2008).[12]Chiao-ShunChuang,Tze-ChingFung,BarryG.Mullins,etal.PhotosensitivityofAmorphousIGZOTFTsforActive-MatrixFlat-PanelDisplays[J].SIDSymposiumDigest,1215-1218(2008).[13]Hyun-SikSeo,Jong-UkBae,Dae-WonKim,etal.DevelopmentofHighlyStablea-IGZOTFTwithTiOxasaPassivationLayerforActive-MatrixDisplay[J].SIDSymposiumDigest,1132-1135(2010).[14]Chih-WeiChien,Hsing-HungHsieh,Cheng-HanWu,etal.High-PerformanceandHighlyRollablea-IGZOTFTsAdoptingCompositeElectrodesandTransparentPolyimideSubstrates[J].SIDSymposiumDigest,921-924(2010).[15]Woo-GeunLee,Kap-SooYoun,Kyung-JaeChung,etal.PhotosensitivityofAmorphousInvestigationonthelongtermstabilityofLCDpanelwithGIZOoxideTFTs[J].FTJ2010,MKRYU(2010).[16]YoshifumiOhta,YoshimasaChikama,TakeshiHara,etal.AmorphousIn-Ga-Zn-OTFT-LCDswithhighreliability[J].IDWSymposiumDigest,1685-1688(2009).[17]JongHyunSeoa,Sang-HyukLeea,Bo-HyunSeoa,etal.PhotosensitivityofAmorphousIGZOTFTsforActive-MatrixFlat-PanelDisplays[J].SIDSymposiumDigest,1439-1431(2008).[18]Chiao-ShunChuang,Tze-ChingFung,BarryG.Mullins,etal.WetEtchingofGalliumIndiumZincOxide(GIZO)SemiconductorforThinFilmTransistorApplication[J