英飞凌IGBT驱动培训资料

ZHLiang-AIAP05Dec2003Page1forinternaluseonlyInfineonTechnologiesAsiaPacificIGBTGateDrive:Current&PowerƒValuesofCies&CresaregiveninIGBTdatasheet.ƒThefactorof5(or6)isusedduetotheeffectofCres(high∆V,high∆Q).+RO_DriverMillerCapacitorCGEZHLiang-AIAP05Dec2003Page4forinternaluseonlyInfineonTechnologiesAsiaPacificIGBTGateDrive:GateResistors‰Itisnecessarytousegateresistors(Rg)becausetheswitchingspeedshouldbelimitedinordertoreducedi/dt&dv/dtandhenceover-voltage&EMIproblem.‰ThecostofusingRgistheincreaseofswitchinglosses.‰Tosetswitch-on&switch-offtimeseparately,RgcanbesplitintoRg_ONandRg_OFF.Rg_ONRg_OFFDriverRg_OFFRg_ONDriverZHLiang-AIAP05Dec2003Page5forinternaluseonlyInfineonTechnologiesAsiaPacificIGBTGateDrive:PowerSupplies„GatedrivingvoltageforIGBTturn-onisnormally+15V.„GatedrivingvoltageforIGBTturn-offcanbe0Vornegative(-5Vto-15V).„NegativegatedrivingvoltagehelpsIGBTswitchofffaster&remaininoffstate,butitneedsdualpowersupplies.„Whethertouse0Vornegativegatedrivingvoltagedependsontherequirementoncost&performance.WithSinglePowerSupply+15V0VDriverWithDualPowerSupplies+15V0V-15VDriverZHLiang-AIAP05Dec2003Page6forinternaluseonlyInfineonTechnologiesAsiaPacificIGBTGateDrive:Interface„Opto-couplersiscommonlyusedasinterfacingdevicesforapplicationswherebothsignaltransmissionandpotentialisolationarerequired.„Opto-couplersoffersreliableisolationbetweenIGBT(high-potential)µ-controller(low-potential).„Opto-couplershaslongsignaldelay(µs)andisexpensive.+VCC+VDDMicro-controllerIsolationDriverZHLiang-AIAP05Dec2003Page7forinternaluseonlyInfineonTechnologiesAsiaPacificIGBTGateDrive:Half-bridgeDrive„Standardconfiguration:2drivers,2powersupplies,2opto-couplers„Advantages:standard,reliable„Disadvantages:usingopto-couplers,highersystemcost+VCC1+VDD1Micro-controllerIsolationDriver+VCC2+VDD2Driver-VCC1-VCC2ZHLiang-AIAP05Dec2003Page8forinternaluseonlyInfineonTechnologiesAsiaPacificIGBTGateDrive:Half-bridgeDrive„Inhalf-bridgeIGBTdrive,opto-couplersoffertwofunctions:(1)safetyisolation&(2)shiftingthepotentialofthegatesignalfromµCpotentialtohigh-sidepotential.„IfsafetyisolationbetweenIGBTµ-controllerisnotneeded,then“LevelShift”canreplaceopto-couplingandrealizefunction(2).Micro-controllerOpto-couplerHigh-sideIGBTLow-sideIGBTOpto-couplerHigh-sideDriverLow-sideDriverZHLiang-AIAP05Dec2003Page9forinternaluseonlyInfineonTechnologiesAsiaPacificIGBTGateDrive:LevelShiftFeatures„HVIC(600V/1200V)„ShortSignalDelay„Cost-effective„NoSafetyIsolationBenefitzSavingOpto-couplers(lowersystemcost)zWiderRangeofSwitchingFrequency(higherflexibility)Micro-controllerHigh-sideIGBTLow-sideIGBTLevelShiftLevelShiftLevelShiftHalf-bridgeDriverZHLiang-AIAP05Dec2003Page10forinternaluseonlyInfineonTechnologiesAsiaPacificIGBTGateDrive:CLTNEWNEW‰CLT–CorelessTransformer(forsignaltransmission)‰Coils(Primary&SecondarySide)realizedonSilicon‰ShortSignalDelay(allowinghighorlowswitchingfrequency)‰LowerCost(comparedto1200Vlevel-shiftdriver)‰SafetyIsolationMicro-controllerHigh-sideIGBTLow-sideIGBTCLTCLTHalf-bridgeDriverMicro-controllerIGBTCLTCLTSingleDriverZHLiang-AIAP05Dec2003Page11forinternaluseonlyInfineonTechnologiesAsiaPacificIGBTGateDrive:Boot-strap„Boot-strapcircuitincludesonlyadiodeandacapacitor.„Inhalf-bridgedrive,theboot-strapcircuitcanreplacethehigh-sidepowersupplyandmakesingle-supplyoperationpossible.„Whenthelow-sideIGBT(orFWD)isON,thediodeisforwardbiasedandthecapacitorischargedbythelow-sidepowersupplyviathelow-sideIGBTandstorestheenergy.„Whenthelow-sideIGBT(andFWD)isOFF,thediodeisreversebiasedandblockstheDC-busvoltagetoprotectthelow-sidecircuit.Meanwhile,thecapacitorsuppliesenergytothehigh-sidedriver.„Theboot-strapcapacitanceshouldbehighenoughtokeepthesupplyvoltagestable.Capacitanceneededcanbecalculatedbasedontheworkingconditionsanddeviceparameters.ZHLiang-AIAP05Dec2003Page12forinternaluseonlyInfineonTechnologiesAsiaPacificIGBTGateDrive:Boot-strapCircuitConventional„3high-sidepowersupplies„1low-sidepowersupplyUsingboot-strapcircuitz3diodes&capacitorsz1low-sidepowersupplyFeatures„Diode:ultra-fastrecovery„Capacitor:general-purposed„Dependentonlow-sideIGBTBenefits„Saving3PS(transformercost)„Reducingwiring&connectionZHLiang-AIAP05Dec2003Page13forinternaluseonlyInfineonTechnologiesAsiaPacificIGBTGateDriveNotes:‰DeadTime;‰VGSpikesinOFFState.DeadTimeDeadTime0V/-15V+15V+15VG-EWaveformsRg_OFFRg_ONRg_OFFRg_ONCGECGE0V/-15VZHLiang-AIAP05Dec2003Page14forinternaluseonlyInfineonTechnologiesAsiaPacificIGBTGateDrive:Summary„Driverisneededinordertocharge/dischargeIGBTparasiticcapacitorsfastenough,hencetoswitchIGBTon/offfastenough.„GateresistorRgisnecessarytousetolimitswitchingspeed.ItcanbesplitintoRg_ONandRg_OFFtocontrolIGBTturn-on&turn-offseparately.„Singleordualpowersuppliescanbeusedforgatedrive,dependingonwhethernegativegatevoltageisneeded.„Opto-couplersisstandardinterfacingdevices,however,itcanbesavedbyusingLevelShiftdriver(ifsafetyisolationisnotrequired)ornewCLTdriver.„Boot-strapcircuitcanreplacethehigh-sidepowersupplyforsimplicity&costreduction.„Deadtimemustbeconsideredinhalf-bridg