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(,200092):,,.,..:;;;:TN304105:A:037222112(2000)1120001203AComprehensiveAbatementTechnologyforArsine,Phosphorus,Sulfur,Fluorine,Chlorine,OxynitridesandHeavyMetalsinSemiconductorIndustryWasteWaterandGasesWENRui2mei(TongjiUniveristy,Shanghai200092,China)Abstract:Acomprehensivetechnologyincludingflowchartandsetupwasdescribedforpollutioncontrolofarsine,phosphorus,sulfur,fluorine,chlorine,oxynitrides,heavymetalsandvariousacidsinsemiconductorindustrywastewaterandgases.Thewastewaterwastreatedinacombinedneutralization2sedimentationsetupbasedontheprincipleofcodeposition.Adualabsorbingtower2showercontainingoxidantandalkalineabsorbantwasusedforremovingarsine,phosphorus,sulfur,fluorine,chlorineandoxynitrides.Aftera2batementtheconcentrationofpollantsanalyysedbyEnvironmentalAdministrationmeetstheStateStandardofEmission.Keywords:semiconductor;wastewater;wastegases;abatement1,,,[1,2]:;;:;:.(MOVPE),22,HBTFET,,.[3].MOVPE..,,,,,.,,..2211,,,,pH.,[][OH]M(OH)n,,,pH8,,,Cd(OH)2=51510-6,Cr(OH)2=210-16,Cr(OH)3=61310-81,Cu(OH)2=251010-20,Fe(OH)3=31210-38,Fe(OH)2=11010-15,Hg(OH)2=41810-26,Mn(OH)2=11110-13,Ni(OH)2=21010-15,Pb(OH)2=11510-15,Sn(OH)2=61310-27,,M+n+n(OH)-1=M(OH)ny:1999207226;:199921023111200011ACTAELECTRONICASINICAVol.28No.11Nov.2000212yvvvvvvvvvvv213(1)1214(a)10m3/h,,q=0165m3/m2h,F=1514m2,h2=215310m(b),q=1114m3/m2h,F=818m2,h2=01866mn1=1514/818=1175n2=215310/01866=219315n=n1n2=1175(219315)=510756112556,,015mm/s,60,,,,,56,,,,.,,,.3311:,,,,,.[46]AsH3AsAs2As4PH3PP2P4:3AsH3+8MnO4-+OH-=3AsO43-+8MnO2+5H2O3As+5MnO4-+4OH-=3AsO43-+5MnO2+2H2O3As2+10MnO4-+8OH-=6AsO43-+10MnO2+4H2O3As4+20MnO4-+16OH-=12AsO43-+20MnO2+8H2O3PH3+8MnO4-+OH-=3PO43-+8MnO2+5H2O3P+5MnO4-+4OH-=3PO43-+5MnO2+2H2O3P2+10MnO4-+8OH-=6PO43-+10MnO2+4H2O3P4+20MnO4-+16OH-=12PO43-+20MnO2+8H2OHF,HCl,SO3,NO2,,.312(23)231331311,,,,,,,,,,,,818pa,1/5,,,..,.,,,,..314,,,,,,,.315,,95%[7].2200034411.11mg/L(pH)PHCODCrBOD5SSLASAsF21101007122229120118010961119015821110061952413901190109611190158A69150100160100155/1,A...4122:mg/L1Cu010214010182Ba01254010963Cd0100050010000724Cr0100690100175As5142011036P1120147CODCr451720108BOD5291710129F-0158013110SS281391311NH4-N2184015312PH618711130103201023215,.A.413(3).3()(mg/m3)(mg/m3)(mg/m3)(mg/m3)(mg/m3)(mg/m3)(mg/m3)P2401037010100104501082//P160104101014015400109801090010063GB1629729640150114207033TJ3627901333TJ362790133GB1629729633TJ362793,.P24..4144(mg/m3)AsPClFSO42-P1601230010060115010901230104015601016012001098P243////0124010370104401020012301082P45014600101601022010100145011201650102101320111P5501310010210101501011015001130102601015019101123P24,.GB16297296TJ3627945,,99,.699,.:,,1955.....,100,100..(8)311:;,/,.,MCM,(CMOS),.,MCM/.:[1],,.[J].,1997,19(4):510-515.[2]Guang2Tsai.Lei,RobertW.Techentin,PaulR.Hayes,DanielJ.SchwabandBarryK.Gilbert.Wavemodelsolutiontotheground/pow2erplanenoiseproblem[J].IEEETransonInstrumentationandMea2surement.1995,44(2):300-303.[3]Guang2TsaiLei,RobertW.TechentinandBarryK.Gilbert.High2fre2quencycharacterizationofpower/ground2planestructures[J].IEEETransonMTT.1999,47(5):562-569.[4]A.E.Ruehli,Equivalentcircuitmodelsforthree2dimensionalmulticon2ductorsystems[J].IEEETrans.onMTT.1974,22(3):216-221.[5]AltanOdabasioglu,MustafaCelik,andLawrenceT.Pileggi.PRIMA:passivereduced2orderinterconnectmacromodelingalgorithm[J].IEEETransonCADofICandsystems.1998,17(8):645-653.[6]ShenLinandErnestS.Kuh.Transientsimulationoflossyinterconnectsbasedontherecursiveconvolutionformulation[J].IEEETransonCAS2I.1992,39(11):879-891.:1972,19957,;19982.,:,GaAs.1958,19811983,,.CAD.40,90.(3):[1]WenRuimei,etal.journalofEnvironmentalSciences,1994,6(1):123-127.[2]..1995,16(3):188-194.[3],.,1997,25(2):76-78.[4]YangHui,LiangJunwu,etal.inTheIstPacificRimInt.Conf..onAdv.MaterialsandProcessing.Eds.Shi,C.D.;Scott,A.TMS,;541-545.[5].,1994,2(4):282-287.[6]WenRuimei,etal.ACTAElectronicaSinica,1995,4(4):93-95.[7]WenRuimei,etal.JournalofEnvironmentalSciences,1994,6(1):123-127.82000