二氧化硅溶胶稳定性的研究

©1994-2010ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.:1672-6952(2005)02-0001-04,3(,113001):,(TEOS),,,-,pH,,,;,pH,;,pH,;DMF,;n(TEABr)/n(TEOS)0.05,TEABr:;;pH;:O648.14:ATheStabilityofSiO2SolQIUChun-yang,ZHANGKe-zheng3(SchoolofPetrochemicalTechnology,LiaoningUniversityofPetroleum&ChemicalTechnology,FushunLiaoning113001,P.R.China)Received8July2004;revised9March2005;accepted5April2005Abstract:TheSiO2solisakindofcolloidsolution,withSiO2particledispersinginwaterororganicsolvents,andhasbeenwidelyusedintheindustriesoftheceramics,textile,papermaking,paint,watertreatmentandsemiconductorandsoon.SiO2solwaspreparedfromtetraethoxysilane(TEOS)bysol-gelmethodwithethanolassolventandhydrochloricacidascatalyst.Theeffectsofthesolvent,thepHvalue,andadditivesonthestabilityofSiO2solwerestudiedduringthesol-gelprocessing.TheeffectsofthesefactorscanbeusedtocontrolthestabilityoftheSiO2sol.TheresultsshowthemoretheamountofEtOH,themorethestabilityofsol.Intheabsenceofadditives,thestabilityofsolincreasesasthepHvalueisincreased.AsthepHvalueisincreased,thestabilityofsolfirstlyincreases,butthendecreaseswhenadditivesareaddedtotheSiO2sol.GelationtimebecomeslongwhenDMFadditiveisaddedtotheSiO2sol.IfthemoleratioofTEABrandTEOSismorethan0.05,TEABrmakesgelationtimebecomelonger.Keywords:SiO2sol;Stability;pHvalue;Additives3Correspondingauthor.Tel.:[phone];fax:[phone];e-mail:[e-mail]-,,(1.05.0nm)[1],,-:2004-07-08:(1978-),,,3,,,[2],,,:[3];[4];[5]©1994-2010ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.[6],DMF(N,N-)TEABr(),pH11.1HJ-4(),PHS-3B(),KQ-250()1.2(TEOS,),(EtOH,),N,N-(DMF,),(TEABr,),(),1.3,(,pH),,(45)22.1,,,:,,,,1,,[7],,,,(C2H5O)3SiOC2H5+H2O(C2H5O)3SiOH+C2H5OH,,:(C2H5O)3SiOH+HOSi(OC2H5)3(C2H5O)3SiOSi(OC2H5)3+H2O:(C2H5O)3SiOC2H5+HOSi(OC2H5)3(C2H5O)3SiOSi(OC2H5)3+C2H5OH,,,1,,13.6,,,,2.2pH,,,,pH,242.2.1pH2:pH2,pH,:(Va)(Vr),[7],,,,,,225©1994-2010ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.[8],,,,,,,;,,(),,2.2.3DMFpH4,pH,(TEOS)N,N-(DMF)11,DMF,,DMF,,,;,,2.3DMF5,DMF,1d,DMF,,DMF,,DMF,(),,,DMF(DCCA),,,,32.©1994-2010ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.(),4d,TEABr,,TEABr,TEABrTEABr,TEABr:,,,[9](ER),(EA),(ESR),,,,,,,,[10][1],.[J].,2000,20(1):28-33.[2]SchwartzRW,VoigtJA.Controlofthinfilmprocessingbehaviorthroughprecursorstructuralmodifications[R].US:Departmentofenergy,1998.[3],.pH[J].,1995,29(6):326-28.[4],,,.-SiO2[J].,2002,24(1):66-67.[5],,,.[J].,2003,29(6):642-645.[6],,,.[J].,2004,21(2):79-83.[7],,.[M].:,1998.[8].[M].:,1998.[9],.[M].:,1997.[10]MarkTAnderson,Rahul,Ganguli,etal.FundamentalsofSol-Gelfilmdeposition[R].US:Departmentofenergy,1996.(Ed.:ZZH,Z)425