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8205GT1PRODUCTSUMMARYVDSSIDRDS(on)(mΩ)Max6A27@VGS=4V20V5.2A38@VGS=2.5VDualN-ChannelHighDensityTrenchMOSFETFEATURES●SuperhighdensecelltrenchdesignforlowRDS(on).●Ruggedandreliable.●IdealforLiionbatterypackapplication.DDD1S12S13G14TSSOP-88D7S26S25G2G1G2S1S2NChannelNChannelABSOLUTEMAXIMUMRATINGS(TA=25°Cunlessotherwisenoted)ParameterSymbolLimitUnitDrain-SourceVoltageVDS20VGate-SourceVoltageVGS±8VID6ADrainCurrent-Continuousa@TA=25°C-PulsebIDM24AaDrain-SourceDiodeForwardCurrentIS1.7ATA=25°C1.5MaximumPowerDissipationaTA=75°CPD0.96WOperatingJunctionandStorageTemperatureRangeTJ,TSTG-55to150°CTHERMALCHARACTERISTICSaThermalResistance,Junction-to-AmbientRthJA83°C/WNotea.SurfaceMountedonFR4Board,t≤10sec.b.Pulsewidthlimitedbymaximumjunctiontemperature.PULANTECHNOLOGYCO.,LIMITED2ELECTRICALCHARACTERISTICS(TA=25°Cunlessotherwisenoted)ParameterSymbolConditionMinTypcMaxUnitOFFCHARACTERISTICSDrain-SourceBreakdownVoltageBVDSSVGS=0V,ID=250uA20VZeroGateVoltageDrainCurrentIDSSVDS=20V,VGS=0V1uAGate-BodyLeakageIGSSVGS=±12V,VDS=0V±100nAbONCHARACTERISTICSGateThresholdVoltageVGS(th)VDS=VGS,ID=250uA0.50.91.5VVGS=4V,ID=6A2327Drain-SourceOn-StateResistanceRDS(on)VGS=2.5V,ID=5.2A3038mΩbDRAIN-SOURCEDIODECHARACTERISTICSDiodeForwardVoltageVSDVGS=0V,IS=1.7A1.2VcDYNAMICCHARACTERISTICSInputCapacitanceCISS522pFOutputCapacitanceCOSS124pFReverseTransferCapacitanceCRSSVDS=8V,VGS=0Vf=1.0MHz148pFcSWITCHINGCHARACTERISTICSTurn-OnDelayTimetD(ON)10nsRiseTimetr8.2nsTurn-OffDelayTimetD(OFF)2.5nsFallTimetfVDD=10V,ID=1AVGEN=4.5VRL=10ΩRGEN=6Ω6nsTotalGateChargeQg6.1nCGate-SourceChargeQgs1.7nCGate-DrainChargeQgdVDS=10V,ID=3AVGS=4.5V1.4nCNoteb.PulseTestPulsewidth≤300us,DutyCycle≤2%.c.Guaranteedbydesign,notsubjecttoproductiontesting.8205GTPULANTECHNOLOGYCO.,LIMITED3ID=250uAVGS=4.5VID=6.0AVth,NormalizedGate-SourceThresholdVoltageBVDSS,NormalizedGate-SourceBreakdownVoltageID,DrainCurrent(A)RDS(on),NormalizedOn-ResistanceID,DrainCurrent(A)VGS,GatetoSourceVoltage(V)252020VGS=2.5~5V161512108VGS=2V5400123456VDS,Drain-to-SourceVoltage(V)Figure1.OutputCharacteristics00123456VGS,Gate-to-SourceVoltage(V)Figure2.TransferCharacteristics1.121.0751.751.051.51.0251.25110.9750.750.950.50.93-50-250255075100125Tj,JunctionTemperature(°C)Figure3.BreakdownVoltageVariationwithTemperature0.25-50-250255075100125Tj,JunctionTemperature(°C)Figure4.On-ResistanceVariationwithTemperature1.3ID=250uAVDS=10V1.210ID=3A1.18160.940.80.720.6-50-250255075100125Tj,JunctionTemperature(°C)Figure5.GateThresholdVariationwithTemperature0048121620Qg,TotalGateCharge(nC)Figure6.GateCharge8205GTPULANTECHNOLOGYCO.,LIMITED4r(t),NormalizedEffectiveTransientThermalImpedanceID,DrainCurrent(A)IS,Source-DrainCurrent(A)40202010101ms10.01S0.1S0.10.030.1VGS=4.5VSinglePulseTA=25C0.51DC3510205010.60.891.011.121.231.34VDS,Drain-SourceVoltage(V)Figure7.MaximumSafeOperatingAreaVSD,BodyDiodeForwardVoltage(V)Figure8.BodyDiodeForwardVoltageVariationwithSourceCurrentVDDRLDVoutVDS90%VGSVinRGENGS10%VGStd(on)trtd(off)tfFigure9.SwitchingTestCircuitandSwitchingWaveforms21DutyCycle0.20.10.10.05PDMt1t20.010.02SinglePulse10-410-310-210-1110SquareWavePulseDuration(sec)Figure10.NormalizedThermalTransientImpedanceCurve1.RthJA(t)=r(t)*RthJA2.RthJA=SeeDatasheet3.TJM-TA=PDM*RthJA(t)4.DutyCycle,D=t1/t21006008205GTPULANTECHNOLOGYCO.,LIMITED