CREE-wafer-MATCATALOG

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1Subjecttochangewithoutnotice.:◊76.2mm◊100.0mm◊150.0mmCree®isthegloballeaderinthemanufactureof4Hsilicon-carbide(SiC)substrates,SiCandIII-Nitrideepitaxialwafers.TheMaterialsBusinessUnitproducesawideassortmentofconductiveandsemi-insulatingproductsranginginwaferdiametersupto150.0mm.ThismaterialisthefoundationforCree’svertically-integratedstructureandismanufactureduponahigh-volumeplatformprocessthatprovidesourcustomersthehighestdegreeofmaterialquality,supplyassurance,andeconomiesofscale.Productapplicationsinclude:4H-NSiCSubstrates/SiCEpitaxy•Optoelectronics•Power-factorcorrection•Solarinverters•Industrialmotordrives4H-HPSISiCSubstrates/III-NitrideEpitaxy•High-powerRF•Graphene•TerahertzTolearnmore,visit©1998-2013Cree,Inc.Allrightsreserved.Theinformationinthisdocumentissubjecttochangewithoutnotice.CreeandtheCreelogoareregisteredtrademarksofCree,Inc.Othertrademarks,productandcompanynamesarethepropertyoftheirrespectiveownersanddonotimplyspecificproductand/orvendorendorsement,sponsorshiporassociation.2MAT-CATALOG.00QCree,Inc.4600SiliconDriveDurham,NC27703USATel:+1.919.313.5300Fax:+1.919.313.5451(n-type;0.020ohm-cm)a~4.2W/cm•K@298Kc~3.7W/cm•K@298KThermalconductivity(HPSI)a~4.9W/cm•K@298Kc~3.9W/cm•K@298KLatticeparametersa=3.073Åc=10.053ÅMohshardness~9Copyright©1998-2013Cree,Inc.Allrightsreserved.Theinformationinthisdocumentissubjecttochangewithoutnotice.CreeandtheCreelogoareregisteredtrademarksofCree,Inc.Othertrademarks,productandcompanynamesarethepropertyoftheirrespectiveownersanddonotimplyspecificproductand/orvendorendorsement,sponsorshiporassociation.3MAT-CATALOG.00QCree,Inc.4600SiliconDriveDurham,NC27703USATel:+1.919.313.5300Fax:+1.919.313.5451=noepitaxy1=1layer2=2layers3=3layers4=4layers5=5layers0=noepitaxyS=standardSiCepitaxyT=thickSiCepitaxy2=double-sidepolish,Si-faceCMP,epiready6=double-sidepolish,C-faceCMP,epiready0=standardmicropipeB=lowbasalplanedislocationdensity(BPD)*L=lowmicropipeV=very-lowmicropipeU=ultra-lowmicropipeZ=zeromicropipe(ZMPTM)resistivitycode(seeappropriatespecificationsheet)0=on-axis4=4.0°off-axis8=8.0°off-axisE=76.2mm(3.0”)F=100.0mmP=production-gradeR=research-gradeN=N-typeP=P-typeT=high-puritysemi-insulating4=4HW=standardproductPartNumberOptionsWXXXXXX–XXXXSeepage9for150-mmproductdescriptions*Lowbasalplanedislocationmaterialisavailablefor100-mmdiametersubstratesonlyCopyright©1998-2013Cree,Inc.Allrightsreserved.Theinformationinthisdocumentissubjecttochangewithoutnotice.CreeandtheCreelogoareregisteredtrademarksofCree,Inc.Othertrademarks,productandcompanynamesarethepropertyoftheirrespectiveownersanddonotimplyspecificproductand/orvendorendorsement,sponsorshiporassociation.4MAT-CATALOG.00QCree,Inc.4600SiliconDriveDurham,NC27703USATel:+1.919.313.5300Fax:+1.919.313.5451˚Off≤15micropipes/cm20.015-0.028CW4NxE8C-L200N8˚Off≤15micropipes/cm20.015-0.028CN-TypeVery-LowMicropipeDensityW4NxE4C-V200N4˚Off≤5micropipes/cm20.015-0.028CW4NxE8C-V200N8˚Off≤5micropipes/cm20.015-0.028CN-TypeUltra-LowMicropipeDensityW4NxE4C-U200N4˚Off≤1micropipes/cm20.015-0.028CW4NxE8C-U200N8˚Off≤1micropipes/cm20.015-0.028CN-TypeZeroMicropipeDensity(ZMPTM)W4NxE4C-Z200N4˚Off0micropipes/cm20.015-0.028CN-TypeLCWW4NRE0X-0200NOn-axisN/A0.013-2.000N/AP-TypeW4PRE8F-0200P8˚OffN/A≤2.5FHigh-PuritySemi-InsulatingW4TRE0R-0200HPSIOn-axisN/A≥1E5RW4TRE8R-0200HPSI8˚OffN/A≥1E5RCopyright©1998-2013Cree,Inc.Allrightsreserved.Theinformationinthisdocumentissubjecttochangewithoutnotice.CreeandtheCreelogoareregisteredtrademarksofCree,Inc.Othertrademarks,productandcompanynamesarethepropertyoftheirrespectiveownersanddonotimplyspecificproductand/orvendorendorsement,sponsorshiporassociation.5MAT-CATALOG.00QCree,Inc.4600SiliconDriveDurham,NC27703USATel:+1.919.313.5300Fax:+1.919.313.5451˚Off≤15micropipes/cm20.015-0.028CN-TypeVery-LowMicropipeDensityW4NxF4C-V200N4˚Off≤5micropipes/cm20.015-0.028CN-TypeUltra-LowMicropipeDensityW4NxF4C-U200N4˚Off≤1micropipes/cm20.015-0.028CW4NxF4C-B200N4˚Off≤1micropipes/cm20.015-0.028C,BPD≤1,000/cm2N-TypeZeroMicropipeDensity(ZMPTM)W4NxF4C-Z200N4˚Off0micropipes/cm20.015-0.028CN-TypeLCWW4NRF0X-0200NOn-axisN/A0.013-2.000N/AHigh-PuritySemi-InsulatingW4TRF0R-0200HPSIOn-axisN/A≥1E5RCopyright©1998-2013Cree,Inc.Allrightsreserved.Theinformationinthisdocumentissubjecttochangewithoutnotice.CreeandtheCreelogoareregisteredtrademarksofCree,Inc.Othertr

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