2SD1306中文资料

2SD1306SiliconNPNEpitaxialADE-208-1144(Z)1st.EditionMar.2001ApplicationLowfrequencyamplifier,MutingOutline1231.Emitter2.Base3.CollectorMPAK2SD13062AbsoluteMaximumRatings(Ta=25°C)ItemSymbolRatingsUnitCollectortobasevoltageVCBO30VCollectortoemittervoltageVCEO15VEmittertobasevoltageVEBO5VCollectorcurrentIC0.7ACollectorpowerdissipationPC150mWJunctiontemperatureTj150CStoragetemperatureTstg–55to+150CElectricalCharacteristics(Ta=25°C)ItemSymbolMinTypMaxUnitTestconditionsCollectortobasebreakdownvoltageV(BR)CBO30——VIC=10mA,IE=0CollectortoemitterbreakdownvoltageV(BR)CEO15——VIC=1mA,RBE=¥EmittertobasebreakdownvoltageV(BR)EBO5——VIE=10mA,IC=0CollectorcutoffcurrentICBO——1.0mAVCB=20V,IE=0DCcurrenttransferratiohFE*1250—800VCE=1V,IC=150mA*2BasetoemittervoltageVBE——1.0VVCE=1V,IC=150mA*2CollectortoemittersaturationvoltageVCE(sat)——0.5VIC=500mA,IB=50mA*2GainbandwidthproductfT—250—MHzVCE=1V,IC=150mA*2Notes:1.The2SD1306isgroupedbyhFEasfollows.2.PulsetestGradeDEMarkNDNEhFE250to500400to800Seecharacteristiccurvesof2SD1504.2SD1306305010015050AmbientTemperatureTa(°C)CollectorPowerDissipationPC(mW)MaximumCollectorDissipationCurve1001502SD13064PackageDimensions0.160–0.1+0.10–0.060.4+0.10–0.050.950.951.9–0.22.95–0.22.8+0.2–0.60.651.5–0.150.651.1+0.2–0.10.3HitachiCodeJEDECEIAJMass(referencevalue)MPAK—Conforms0.011gAsofJanuary,2001Unit:mm2SD13065Cautions1.HitachineitherwarrantsnorgrantslicensesofanyrightsofHitachi’soranythirdparty’spatent,copyright,trademark,orotherintellectualpropertyrightsforinformationcontainedinthisdocument.Hitachibearsnoresponsibilityforproblemsthatmayarisewiththirdparty’srights,includingintellectualpropertyrights,inconnectionwithuseoftheinformationcontainedinthisdocument.2.Productsandproductspecificationsmaybesubjecttochangewithoutnotice.Confirmthatyouhavereceivedthelatestproductstandardsorspecificationsbeforefinaldesign,purchaseoruse.3.Hitachimakeseveryattempttoensurethatitsproductsareofhighqualityandreliability.However,contactHitachi’ssalesofficebeforeusingtheproductinanapplicationthatdemandsespeciallyhighqualityandreliabilityorwhereitsfailureormalfunctionmaydirectlythreatenhumanlifeorcauseriskofbodilyinjury,suchasaerospace,aeronautics,nuclearpower,combustioncontrol,transportation,traffic,safetyequipmentormedicalequipmentforlifesupport.4.DesignyourapplicationsothattheproductisusedwithintherangesguaranteedbyHitachiparticularlyformaximumrating,operatingsupplyvoltagerange,heatradiationcharacteristics,installationconditionsandothercharacteristics.Hitachibearsnoresponsibilityforfailureordamagewhenusedbeyondtheguaranteedranges.Evenwithintheguaranteedranges,considernormallyforeseeablefailureratesorfailuremodesinsemiconductordevicesandemploysystemicmeasuressuchasfail-safes,sothattheequipmentincorporatingHitachiproductdoesnotcausebodilyinjury,fireorotherconsequentialdamageduetooperationoftheHitachiproduct.5.Thisproductisnotdesignedtoberadiationresistant.6.Nooneispermittedtoreproduceorduplicate,inanyform,thewholeorpartofthisdocumentwithoutwrittenapprovalfromHitachi.7.ContactHitachi’ssalesofficeforanyquestionsregardingthisdocumentorHitachisemiconductorproducts.Hitachi,Ltd.Semiconductor&IntegratedCircuits.NipponBldg.,2-6-2,Ohte-machi,Chiyoda-ku,Tokyo100-0004,JapanTel:Tokyo(03)3270-2111Fax:[phone]CopyrightHitachi,Ltd.,2000.Allrightsreserved.PrintedinJapan.HitachiAsiaLtd.HitachiTower16CollyerQuay#20-00,Singapore049318Tel:[phone]-8577Fax:[phone]-3877URL:://semiconductor.hitachi.com/Europe::://(TaipeiBranchOffice)4/F,No.167,TunHwaNorthRoad,Hung-KuoBuilding,Taipei(105),TaiwanTel:886-(2)-2718-3666Fax:[phone]Telex:23222HAS-TPURL:(HongKong)Ltd.GroupIII(ElectronicComponents)7/F.,NorthTower,WorldFinanceCentre,HarbourCity,CantonRoadTsimShaTsui,Kowloon,HongKongTel:852-(2)-735-9218Fax:[phone]URL::44(1628)585000Fax:[phone]HitachiEuropeGmbHElectronicComponentsGroupDornacherStraβe3D-85622Feldkirchen,MunichGermanyTel:49(89)99180-0Fax:[phone]HitachiSemiconductor(America)Inc.179EastTasmanDrive,SanJose,CA95134Tel:[phone]Fax:[phone]Forfurtherinformationwriteto:Colophon2.0