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151Vol.15,No.120031HIGHPOWERLASERANDPARTICLEBEAMSJan.,2003:100124322(2003)0120033204OTCSX1,1,1,2,2(1.,610064;2.,100080):(PL)(OTCS)GaAs/AlGaAs8.92m,20kV/cm60min,PL(797nm)812nm,,OTCS,,,:;;;;:TN246:A,,,,,,,[1],,,,,GaAs/AlGaAs[24]8.92m,20kV/cm60min,OTCS797nm,,,,[5],GaAs/AlGaAs,11.1Fig.1Quantumwellsstructure1(MBE)GaAs/AlGaAs,1nGaAs200nmGaAs,30,GaAs10nm,Al0.3Ga0.7As20nm,50nmGaAs1.2(BFEL)8.92m,1.29mJ,3.69mm,20kV/cm60min,3JJ21MeV,11016/cm2X:2002203228;:2002208229:(6008802);:(19772),,,;E2mail:zourui@hotmail.com©1995-2005TsinghuaTongfangOpticalDiscCo.,Ltd.Allrightsreserved.Fig.2SchematicdiagramofOTCSset2up2OTCS1.3OTCS(OTCS):,OTCSDLTS,222.1(PL)Fig.3Photoluminescencespectraat15K3[6]IFS120HR,514.5nm,15K,31#,797nmn=1,2#1MeV,1016/cm2,,,3#,812nm,,GaAs/AlGaAs,812nmAl,,,,,797nm812nm,,AlGaAs/AlGaAs[7,8],AlAlx(z)x(z)=x01-12erf(Lz+2z4Ld)+erf(Lz-2z4Ld)(1):Ld=Dt,D:D=D0exp(E/KT),D0=1017cm2/s,E=5.6eV,t;x0Al,erf(x)(1),U(z)=Qc[Eg(z)-Eg(z=0)](2):Eg;Qc(2)AlGaAsAlGaAs,,,,,(z),[9],,2Dn=-R3y/(n-1/2)2(3):R3y4315©1995-2005TsinghuaTongfangOpticalDiscCo.,Ltd.Allrightsreserved.a3B=0h2/e2(4):;02D1s=22a3Be-2r/a3B(5),,,,,,1MeVm,,,,,,,,2.2OTCS1,8.92m70m,1.15m,1GaAs(1/)(R)Table1AbsorptionlengthandreflectivityofGaAsatroomtemperaturewavelength/m0.250.51.0610.6GaAs1/6nm100nm70m1cmR0.60.390.310.284OTCS,22V,10ms1#OTCS,E1GaAs,E2AlGaAs2#OTCS,E3,,E1E2,E1,E2,E3Fig.4Opticaltransientcurrentspectra4OTCSE1,GaAs,,Ec-0.11eVEc-0.1eV,,E2,E2,E2,E2E3,,0.1eV,,3,,GaAs/AlGaAs,,OTCS:[1],.[M].:,1995.14.(HuiZX,YangZH.Freeelectronlasers.Beijing:NationalDefenceIn2531:OTCS©1995-2005TsinghuaTongfangOpticalDiscCo.,Ltd.Allrightsreserved.dustryPress,1995.14)[2]BerhaneY,ManasrehMO,WeaverBD.He+2ionirradiationeffectonintersubbandtransitionsinGaAs/AlGaAsmultiplequantumwells[J].JApplPhys,2001,89(6):35173519.[3],,,.GaAs/AlGaAs[J].,1999,20(11):957962.(HuangWX,LinLB,ZengYP,etal.EffectsofopticcharacterofGaAs/AlGaAsmultiplequantumwellwithprotonirradiation.ChineseJSemiconductors,1999,20(11):957962)[4],.GaAs/AlGaAs[J].,.(ZouR,LinLB.Irradiationef2fectsonopticcharacterinGaAs/AlGaAsquantumwells.Progress&ResearchinSolidStateElectronics,accepted)[5]NakanoH,KuboH,MoriN,etal.LuminescencefromGaAs/AlGaAsquantumwellsinducedbymid2infraredfreeelectronlaserpulses[J].PhysicaE,2000,7:555558.[6].[M].:,1992.633.(ShenXC.Semiconductoroptics.Beijing:SciencePress,1992.633)[7]LiEH,WeissBL,ChanKS.EffectofinterdiffusiononthesubbandsinanAlxGa12xAssinglequantum2wellstructure[J].PhysRevB,1992,46(23):1518115192.[8],,,.GaAs/AlGaAs[J].,2000,21(3):264267.(LiN,LiuXQ,LiN,etal.ModificationofGaAs/AlGaAsquantumwellinfraredphotodetectorsbyrapidthermalannealing.ChineseJSemiconductors,2000,21(3):264267)[9],.[M].:,1995.8687.(XiaJB,ZhuBF.Semiconductorsuperlatticephysics.Shang2hai:ScienceandTechnologyPress,1995.8687)StudyonGaAs/AlGaAsmultiplequantumwellsirradiatedbyfreeelectronlaserandOTCSmeasurementZOURui1,LINLi2bin1,ZHANGMeng1,ZHANGGuo2qing2,LiYong2gui2(1.DepartmentofPhysics,SichuanUniversity,Chengdu610064,China;2.InstituteofHighEnergyPhysics,theChineseAcademyofSciences,Beijing100080,China)Abstract:Photoluminescence(PL)andopticaltransientcurrentspectra(OTCS)wereobservedfromGaAs/AlGaAsquantumwellsstructureexcitedbymid2infraredfreeelectronlaser(FEL)irradiation.TheexperimentalresultsofPLshowedthatthecharacteris2ticPLpeakofquantumwellsshiftedtolongerwavelength(redshift)andtheintensitydecreasedmuchafterFELirradiation.FromtheanalysisofOTCS,extrinsicdefectswerefoundafterFELirradiation.Thispaperauthordiscussestheresultsandcomparisonwiththatofelectronirradiation.Keywords:GaAs/AlGaAsquantumwells;freeelectronlaserirradiation;photoluminescencespectra;redshift;OTCS6315©1995-2005TsinghuaTongfangOpticalDiscCo.,Ltd.Allrightsreserved.