俄歇复合对同质结InGaAs探测器探测率的影响

:2005-07-28.　:(2004035568);(50132020);(50372067,60477012).InGaAs殷景志1,时　宝1,李龙海1,王一丁1,杜国同1,缪国庆2,宋　航2,蒋　红2,金亿鑫2(1.,130023;2.,130033)　:　通过对InGaAs材料的俄歇(Auger)复合机制的理论分析,给出了少子寿命与材料组分、温度和载流子浓度的关系,从而得到材料参数等对InGaAs探测器的探测率影响的结果,优化材料参数和器件结构可抑制Auger复合机制,提高InGaAs探测器的探测率。:　InGaAs;;Auger:TN929.11　:A　:1001-5868(2006)02-0123-05EffectofAugerRecombinationonDetectivityofHomojunctionInGaAsDetectorYINJing-zhi1,SHIBao1,LILong-hai1,WANGYi-ding1,DUGuo-tong1,MIAOGuo-qing2,SONGHang2,JIANGHong2,JINYi-xin2(1.CollegeofElectronicScienceandEngineering,JilinUniversity,Changchun130023,CHN;2.ChangchunInstituteofOptics,FineMechanicsandPhysics,ChineseAcademyofSciences,Changchun130033,CHN)Abstract:　BytheoreticalanalysisonInGaAsmaterial,lifetimecausedbyAugerrecombinationmechanismiscalculateddependingonthecomposition,temperatureandcarrierconcentration.ThecalculatedresultsshowthattheAugerrecombinationmechanismissuppressedbyoptimizingthematerialparametersandtechnologiccondition,sothathighdetectivitycouldbeobtainedforInGaAsdetector.Keywords:　InGaAsdetector;detectivity;Augerrecombirnationmechanism1　InGaAsD*,,(NEP)、ηR。,,。,(Auger)。,,、,pnAuger。InGaAsAuger,、,InGaAs,Auger,D*InGaAs。2　InGaAsnpInGaAs,InP,1。[4]D*=ληqhcR0A4kT(1):R0A123《》20064272殷景志等:　俄歇复合对同质结InGaAs探测器探测率的影响,k,T,λ,η,q,c。1　pnInGaAs:λc,λ=λc=hc/Eg(Eg),η=100%,(1)D*=qEgR0A4kT(2)　　,,Eg,R0A,。R0A,pnR0A[4]:(R0A)e=kTq2LepDen2ireshd-wpLe+chd-wpLerechd-wpLe+shd-wpLe(3)(R0A)h=kTq2LhnDhn2irhsht-wnLh+cht-wnLhrhcht-wnLh+sht-wnLh(4),Di=kTqμi,Li=(Diτi)1/2,ri=LiSiDi(5),Di(i=eh),Li,μi,τi,n、pnp。(3)(4),R0A,。,pn[4]1(R0A)=1(R0A)e+1(R0A)h(6)　　Auger。、,,10[5],A-1A-7Auger。,-Δ,-,Auger,A-S[6,7]。A-1、A-7A-S,A-1nAuger,A-7A-SpAuger[8]。AugerAuger,A-1、A-7A-SAuger[8]1τA=1τA1+1τA7+1τAS(7)A-1、A-7A-S[4]τA1=2τiA1/(1+n0/p0)(8)τA7=2τiA7/(1+p0/n0)(9)τAS=2τiAS/(1+p0/n0)(10),p0n0,τi。A-1[9]τiA1=3.8×10-18εs(1+μ)1/2(1+2μ)exp1+2μEg1+μkTm*em0F1F22kTEg3/2(11),μ=m*e/m*h,εs,m0,F1F2。A-7τiA7=γτiA1(12)γA-1A-7。[10],γ=2m*e(Eth)m*e01-5Eg/4kT1-3Eg/2kT(13)　　ΔEgΔEg,A-S[11]。ΔEg,τiAS=5εm3hhm*(3/2)ekTΔ2(Eg+Δ)expΔ-EgkT54π4n2ie4h　3m*5/2s(Δ-Eg)(14)　　ΔEg,τiAS=ε2m*hhm*2sE5g2×18πn2ie4h　3m*e(Δ+Eg)2β2[I1(β)-I2(β)/2](15)124SEMICONDUCTOROPTOELECTRONICS　Vol.27No.2Apr.2006β=2m*sm*hhEg-ΔkTE2g(Eg+Δ)(3Eg-2Δ)(16)I1(β)=2π3/2βπ22∫∞01-12t2exp-βt22dt+∫4/π0sinθexp(-βcos2θ)θ2-sin4θ8/cos2θ-2θdθ(17)I2(β)=4π∫∞0q2(4q2-1)(4q2+1)4q2+14q+4q4q2+1ln2q+12q-12-2exp-β2q2+12dq(18)3　,In1-xGaxAsAugerGa,Augerτ。2p=1017cm-3p-In1-xGaxAs,A-1、A-7A-SAugerGa。3n=1018cm-3n-In1-xGaxAsT=300K,A-1、A-7A-SAugerGa。23,AugerGa,Ga[12]。,Auger,Auger。2、3,p,AugerA-7;n,AugerA-1。Auger,A-72,A-121。,p,A-7;nA-1。2,,。,,,。4pnIn0.53Ga0.47AsAuger,,pAugerA-7,nAugerA-1。,Auger:(1);(2);(3)。2　pIn1-xGaxAsAugerGa3　nIn1-xGaxAsAuger300KGa5(a)n=p=1017cm-3T=300KpnIn1-xGaxAsAugerGa,np,pAuger125《》20064272殷景志等:　俄歇复合对同质结InGaAs探测器探测率的影响nAuger;5(b)300KIn0.53Ga0.47As、Auger,,1013cm-3,pAugernAuger。4　pnIn0.53Ga0.47AsAugerAugerR0AAuger,6R0AGa。Auger,Auger,、,τAAuger。5　pnAuger6　R0AGa7,R0ApnIn0.53Ga0.47As,R0A。,,。R0AD*,8。7　R0ApnIn0.53Ga0.47As126SEMICONDUCTOROPTOELECTRONICS　Vol.27No.2Apr.20068　D*、pD*。p,D*;p,D*。D*。4　pn,npAuger,、Auger(Auger)。Auger,。,Auger,、,D*。:[1]　RogalskiA.Infrareddetectors:anoverview[J].InfraredPhys.&Technol.,2002,43:187-210.[2]　RogalskiA.Infrareddetectors:statusandtrends[J].ProgressinQuantumElectron.,2003,27:59-210.[3]　PiotrowskiJ,KaniewskiJ,ReginskiK.ModelingandoptimizationofInGaAsinfraredphotovoltaicdetectors[J].NuclearInstrumentandMethodsinPhysicsResearchA,2000,439:647-650.[4]　TianYuan,ZhouTianming.TheoreticalanalysisoftheAugermechanisminaGaInAsSbinfraredphotovoltaicdetector[J].Opt.Eng.,1998,37(6):1754-1762.[5]　Beattie.QuantumefficiencyinInSb[J].J.Phys.Chem.Solids,1962,24:1049-1056.[6]　SagimuraA.Band-to-bandAugereffectinGaSbandInAslasers[J].J.Appl.Phys.,1980,51:4405.[7]　SagimuraA.Band-to-bandAugereffectinlongwavelengthmultinaryⅢ-Ⅴalloysemiconductorlasers[J].IEEEJ.QuantumElectron.,1982,QE-18:352-363.[8]　RogalskiA.Band-to-bandrecombinationinInAs1-xSbx[J].InfraredPhys.,1985,25:551-560.[9]　CasselmanTN.AcomparisonofthedominantAugertransitionsinP-typed(HgCd)Te[J].SolidStateCommum.,1980,33:615.[10]　KingstonRH.Detectionofopticalandinfraredradiation[M].NewYork:Springer,1978.[11]　GelmontBL.Augerrecombinationindiamond-likenarrow-gapsemiconductors[J].Phys.Lett.,1978,66A:323.[12]　,,　.[M].:,2004.203.:(1960-),女,哈尔滨人,2003年至2005年在中国科学院长春光学精密机械与物理研究所做博士后研究,主要研究方向为半导体光电器件。E-mail:[e-mail]127《》20064272殷景志等:　俄歇复合对同质结InGaAs探测器探测率的影响