KLA-TENCOR-RS-75-training

251CHUNG-YANGROAD,HSINCHUTEL:[phone],FAX:[phone]TrainingCourseforOnmiMapRS75/tcFaSTDivision,TaiwanAlbertYang(楊雙彰)TEL:(03)[e-mail]pany251CHUNG-YANGROAD,HSINCHUTEL:[phone],FAX:[phone]RS-75TrainingSchedule•Introduction•Operation•Maintenance•Application251CHUNG-YANGROAD,HSINCHUTEL:[phone],FAX:[phone]HISTORYRS35C/CARS55/tcRS75CPU486/33Mhz486/33/66Mhz486/66MhzHardDriver110MB110MB330MBCartridgeDriverN/AStandardOptionFlatAlignerOutsideOutsideInsideTemp.Comp.OptionStandardOptionAccount#1310FileFolder81729729CorrelationCurve1stOrder3rdOrder3rdOrderThroughput38wph38wph100wphAvailableNoNoYes251CHUNG-YANGROAD,HSINCHUTEL:[phone],FAX:[phone]MeasurementSpecifications•Measurementrange:5mOhm/sqto5MOhm/sq•Absoluteaccuracy:basesonNIST(NBS)standardwaferscorrectedto23C:+-1%ofNISTcertifiedrange•Measurementrepeatability:basedonTencor’s“ProbeQualificationTest”@1”testdiameter,usingappropriateprobehead:0.2%•Edgeexclusion:4mmfromedgeofconductivefilmwith40milprobehead,3mmwith25milprobehead•Throughput,basedon5-sitetest,singlecassette,withflatalignmentandtemp.compensation:100WPH•Typicalmeasurementtime,basedon49-sitetest,manuallyloadedsinglewafer,withtemp.compensation:=60sec.251CHUNG-YANGROAD,HSINCHUTEL:[phone],FAX:[phone]SystemOverview•Thecomputercomponents•Thetestercomponents•Thewaferhandler•Thepowersupply251CHUNG-YANGROAD,HSINCHUTEL:[phone],FAX:[phone]HardwareOverview251CHUNG-YANGROAD,HSINCHUTEL:[phone],FAX:[phone]CommunicationPort•COM1:Printer•COM2:SECSII(Gem)•COM3:WaferHandler•COM4:Tester251CHUNG-YANGROAD,HSINCHUTEL:[phone],FAX:[phone]Tester251CHUNG-YANGROAD,HSINCHUTEL:[phone],FAX:[phone]TheoryofMeasurementA=txwR=V/I=r/(L/A)r=VA/IL=(tw/L)/(V/I)Rs=r/t=(w/L)/(V/I)=(p/ln2)/(V/I)251CHUNG-YANGROAD,HSINCHUTEL:[phone],FAX:[phone]ResistivityofInfiniteThinFilmIRsVp22lnpprprrrdrRsIrdrtItrdrIALdIdRIdV222)(R.IVπRs06492ln2rALR)(ln22constrrKrtIVrdrtIVdVprprLAWtrdrI251CHUNG-YANGROAD,HSINCHUTEL:[phone],FAX:[phone]LinearFour-PointProbe251CHUNG-YANGROAD,HSINCHUTEL:[phone],FAX:[phone]BasicAssumptions•Waferperfectlyuniform•Probeequallyspaced•Measuringatthecenterofwafer251CHUNG-YANGROAD,HSINCHUTEL:[phone],FAX:[phone]EdgeEffect251CHUNG-YANGROAD,HSINCHUTEL:[phone],FAX:[phone]MeasuringConfigurationsRs=4.532(Va/I)Ra=Va/IRs=5.751(Vb/I)Rb=Vb/IVa/Vb=1.269(spec:1.14-1.41)251CHUNG-YANGROAD,HSINCHUTEL:[phone],FAX:[phone]TypicalSheetResistance•Metals5mOhm/sq-100kOhm/sq•SiliconSubstrates0.1Ohm/sq-1MOhm/sq•CVD/Silicides0.3Ohm/sq-10kOhm/sq•RTP0.3Ohm/sq-1MOhm/sq•Epi1Ohm/sq-5MOhm/sq•Diffusion5Ohm/sq-20Ohm/sq•IonImplant10Ohm/sq-1MOhm/sq•DopedPoly10Ohm/sq-5MOhm/sq251CHUNG-YANGROAD,HSINCHUTEL:[phone],FAX:[phone]ProbeTypesKLA-Tencoroffers8differenttypesofprobesfordifferentmaterialapplications.Probetypesvaryinthefollowingways:ProbeTipRadiusProbeTipPitch(Spacing)ProbeTipLoading-orSpringLoading251CHUNG-YANGROAD,HSINCHUTEL:[phone],FAX:[phone]ProbeSelectionTableProbeTypePart#DescriptionApplicationA50-0002-011.6mil,100gm,TungstenCarbide,40milF50-0002-101.6mil,100gm,TungstenCarbide,25milFormeasuringmetalsB50-0002-024.0mil,100gm,TungstenCarbide,40milG50-0002-114.0mil,100gm,TungstenCarbide,25milGeneralpurposeheadforimplantation,dopedpoly,silicides,exitaxy,anddiffusionC50-0002-038.0mil,100gm,TungstenCarbide,40milH50-0002-128.0mil,100gm,TungstenCarbide,25milSpecificallydesignedforhighimpedancesurfacessuchaslowimplantdose,shallowjunctions,dopedpolyD50-0002-0520.0mil,100gm,TungstenCarbide,40milForverydifficultimplantandhighimpedancesurfacesbeyond8.0milE50-0002-061.6mil,200gm,TungstenCarbide,62.5milProbeheadspecifictosubstratemeasurements,i.e.bulk251CHUNG-YANGROAD,HSINCHUTEL:[phone],FAX:[phone]RadiusofProbeTip251CHUNG-YANGROAD,HSINCHUTEL:[phone],FAX:[phone]ProbeTipLoadingFigureASpringProbepinPadSubstrateFilmFigureB•FigureAshowsthebasiccomponentsofthefourpointprobeProbepinsTwoPads(secondpadhiddeninthisview)Springsforprobepinloading•FigureBshowsproberestingonthefilm.NoticepadsrestingonfilmCompressed251CHUNG-YANGROAD,HSINCHUTEL:[phone],FAX:[phone]EdgePerformanceEdgeExclusionisnotjustthedistancefromtheedgeofthewafer!SiliconWaferPrecisionProbeHeadMetalFilmABDCProbeHeadA=WaferBevelB=FilmExclusionZoneC=FilmSlopeD=ProbeEdgeExclusionAutoSystems25milprobe:3mmfromedgeofconductivefilm40milprobe:4mmfromedgeofconductivefilm62.5milprobe:5mmfromedgeofconductivefilmSiliconWaferProbeHead251CHUNG-YANGROAD,HSINCHUTEL:[phone],FAX:[phone]ProbeConsiderations•Filmmaterial•Measuringrange•Filmthickness251CHUNG-YANGROAD,HSINCHUTEL:[phone],FAX:[phone]ProbeSuggestionMetalsHighDoseLowRsMediumDoseMediumRsLowDoseHighRsBuriedLayersorBulkSubstrateTypeA,FPreferredAlternateAlternateTypeB,GAlternatePreferredAlternateTypeC,HAlternatePreferredAlternateTypeDAlte