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Si2302DSVishaySiliconixN-Channel1.25-W,2.5-VMOSFET:13286655786Si2302DSVishaySiliconixN-Channel1.25-W,2.5-VMOSFET VDS(V)rDS(on)()ID(A)200.085@VGS=4.5V2.8200.115@VGS=2.5V2.4GSDTopView23TO-236(SOT-23)1Si2302DS(A2)**MarkingCode ParameterSymbolLimitUnitDrain-SourceVoltageVDS20VGate-SourceVoltageVGS8VContinuousDrainCurrent(TJ=150C)bTA=25CID2.8AContinuousDrainCurrent(TJ=150C)bTA=70CID2.2APulsedDrainCurrentaIDM10AContinuousSourceCurrent(DiodeConduction)bIS1.6PowerDissipationbTA=25CPD1.25WPowerDissipationbTA=70CPD0.80WOperatingJunctionandStorageTemperatureRangeTJ,Tstg–55to150C ParameterSymbolLimitUnitMaximumJunction-to-AmbientbRthJA100C/WMaximumJunction-to-AmbientcRthJA166C/WNotesa.Pulsewidthlimitedbymaximumjunctiontemperature.b.SurfaceMountedonFR4Board,t5sec.c.SurfaceMountedonFR4Board.ForSPICEmodelinformationviatheWorldwideWeb::15974451680755-27529455M/P:13286655786Si2302DSVishaySiliconix ParameterSymbolTestConditionsMinTypMaxUnitStaticDrain-SourceBreakdownVoltageV(BR)DSSVGS=0V,ID=10A20VGate-ThresholdVoltageVGS(th)VDS=VGS,ID=50A0.65VGate-BodyLeakageIGSSVDS=0V,VGS=8V100nAZeroGateVoltageDrainCurrentIDSSVDS=20V,VGS=0V1AZeroGateVoltageDrainCurrentIDSSVDS=20V,VGS=0V,TJ=55C10AOn-StateDrainCurrentaID(on)VDS5V,VGS=4.5V6AOn-StateDrainCurrentaID(on)VDS5V,VGS=2.5V4ADrain-SourceOn-ResistancearDS(on)VGS=4.5V,ID=3.6A0.070.085Drain-SourceOn-ResistancearDS(on)VGS=2.5V,ID=3.1A0.0850.115ForwardTransconductanceagfsVDS=5V,ID=3.6A10SDiodeForwardVoltageVSDIS=1.6A,VGS=0V0.761.2VDynamicTotalGateChargeQgV10VV45VI36A5.410CGate-SourceChargeQgsVDS=10V,VGS=4.5V,ID=3.6A0.65nCGate-DrainChargeQgd1.60InputCapacitanceCissV10VV0Vf1MH340FOutputCapacitanceCossVDS=10V,VGS=0V,f=1MHz115pFReverseTransferCapacitanceCrss33SwitchingTurn-OnDelayTimetd(on)V10VR551225RiseTimetrVDD=10V,RL=5.5I36AV45VR63660nsTurn-OffDelayTimetd(off)DD,LID3.6A,VGEN=4.5V,RG=63460nsFall-Timetf1025Notesa.Pulsetest:PW300sdutycycle2%..VNLR02:13286655786Si2302DSVishaySiliconix 024681000.51.01.52.02.5On-Resistancevs.DrainCurrentOutputCharacteristicsTransferCharacteristicsVDS–Drain-to-SourceVoltage(V)–DrainCurrent(A)IDVGS–Gate-to-SourceVoltage(V)–DrainCurrent(A)ID0246810012345TC=125C–55C0,0.5,1VVGS=5thru2.5V1.5V2V020040060080010000481216200.60.81.01.21.41.61.8–500501001500123450123456700.030.060.090.120.150246810GateCharge–Gate-to-SourceVoltage(V)Qg–TotalGateCharge(nC)VDS–Drain-to-SourceVoltage(V)C–Capacitance(pF)VGSCrssCossCissVDS=10VID=3.6A–On-Resistance(rDS(on))ID–DrainCurrent(A)CapacitanceOn-Resistancevs.JunctionTemperatureVGS=4.5VID=3.6ATJ–JunctionTemperature(C)(Normalized)–On-Resistance(rDS(on))VGS=2.5VVGS=4.5V25C:13286655786Si2302DSVishaySiliconix 0.20.40.60.81.01.2Power(W)–0.4–0.3–0.2–0.1–0.00.10.2–5005010015000.040.080.120.160.2002468Source-DrainDiodeForwardVoltageOn-Resistancevs.Gate-to-SourceVoltageThresholdVoltageSinglePulsePowerNormalizedThermalTransientImpedance,Junction-to-AmbientSquareWavePulseDuration(sec)210.10.0110–410–310–210–11NormalizedEffectiveTransientThermalImpedance30–On-Resistance(rDS(on))VSD–Source-to-DrainVoltage(V)VGS–Gate-to-SourceVoltage(V)–SourceCurrent(A)ISTJ–Temperature(C)Variance(V)VGS(th)0.20.10.050.02SinglePulseDutyCycle=0.5ID=3.6AID=250A10110TJ=25CTJ=150C0.010.101.0010.00Time(sec)TC=25CSinglePulse14128402610:13286655786